Download or read book Characterization of Structural and Electronic Properties in Undoped Hydrogenated Amorphous Silicon written by M. Stutzmann and published by . This book was released on 1990 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Structural and Electronic Propertiesinundoped Hydrogenated Amorphous Silicon written by P. Menna and published by . This book was released on 1990 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics of Hydrogenated Amorphous Silicon I written by J.D. Joannopoulos and published by Springer. This book was released on 1984-06-01 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Hydrogenated Amorphous Silicon Prepared Using a Combined Hot Wire and Electron Cyclotron Resonance Plasma Deposition Technique written by Matthew Alan Ring and published by . This book was released on 2003 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.

Download or read book Amorphous Semiconductors written by Kazuo Morigaki and published by John Wiley & Sons. This book was released on 2016-12-29 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

Download or read book Hydrogenated Amorphous Silicon written by R. A. Street and published by Cambridge University Press. This book was released on 2005-09-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.

Download or read book Amorphous Silicon and Related Materials written by Hellmut Fritzsche and published by World Scientific. This book was released on 1989-01-01 with total page 742 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.

Download or read book The Structural and Electronic Properties of Amorphous silicon based Alloy Materials written by and published by . This book was released on 1984 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.

Download or read book Structure and Electronic Properties of Amorphous Silicon written by Brian N. Davidson and published by . This book was released on 1992 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Characterization of Hydrogenated Amorphous Silicon written by Thomas Sing-Kiat Liong and published by . This book was released on 1982 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Structural and Electronic Properties of Amorphous silicon based Alloy Materials written by D. K. Biegelsen and published by . This book was released on 1984 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.

Download or read book Amorphous Silicon And Related Materials In 2 Parts written by Hellmut Fritzsche and published by World Scientific. This book was released on 1989-01-01 with total page 1153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.

Download or read book Structural Characterization of Amorphous Silicon written by Bianca Haberl and published by . This book was released on 2010 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: The structure of amorphous silicon (a-Si) has attracted wide interest over the recent decades. This substantial interest is twofold. Firstly, a-Si has many, highly significant, technological applications. Secondly, physically it is a fundamentally interesting material which has been regarded as a model system of a covalently bonded continuous random network (CRN). Such a CRN is a random network in which each atom has full four-fold coordination as the only specific structural feature. More recently, improvement of techniques has allowed greater insight into the structural properties of a-Si. Intriguing deviations, not only from the ideal CRN, but especially between different forms of a-Si have been observed. However, to date it remains unclear to what extent the formation method of a-Si influences its structural order. Another critically important parameter in the nature of a-Si is its thermal history. For example, a-Si formed by ion-implantation undergoes structural relaxation - or short-range ordering - upon thermal annealing to a new state that is close to an ideal CRN. It remains unclear however, if other forms of a-Si undergo structural relaxation to the same degree. Thus, despite its widespread use and decades of research, the exact nature of a-Si is still not fully understood and this thesis addresses this topic. Different forms of a-Si was prepared by deposition techniques, rapid quenching from the melt and solid-state amorphization. These different forms were investigated in their as-prepared state as well as in their thermally annealed. A combination of techniques was used, namely nanoindentation, electron-energy-loss spectroscopy, Raman microspectroscopy, electron diffraction and fluctuation electron microscopy. All forms of a-Si were first probed for their uniformity. Films prepared by plasma-enhanced chemical vapour deposition and by rapid quenching from the melt were found to contain voids and nanocrystals which prevented the study of their structural properties. More uniform films prepared by magnetron-sputtering, ion-implantation and the so-called pressure-induced (PI) a-Si however, were studied in depth for their structural properties. Each as-prepared form of a-Si was found to have a unique network with very different structural properties. The magnetron-sputtered a-Si was observed to have significant microstructure. The pure ion-implanted a-Si however, is free of such microstructure although some inhomogeneities are clearly present within the network. Interestingly, PI a-Si possesses very little order on the entire length-scale. Only uniform, pure forms of a-Si without any microstructure undergo structural relaxation upon annealing. In the case of the other forms of a-Si, the presence of voids and nanopores seems to prevent the formation of a more ideal CRN. Intriguingly, for the pure cases however, the structural relaxation results in essentially the same properties for both networks over the entire length-scale. These findings were used to build a framework for the understanding of the structure of a-Si. Such a framework is a first step towards more realistic structural models since without detailed experimental data no assertive validation of any model is possible. Therefore, this framework is expected to advance the understanding of the structure of a-Si as well as other covalently bonded amorphous semiconductors.

Download or read book The Physics of Hydrogenated Amorphous Silicon II written by J.D. Joannopoulos and published by Springer Science & Business Media. This book was released on 2008-02-29 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Maria Peressi and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoelectric Properties and Applications of Low Mobility Semiconductors written by Rolf Könenkamp and published by Springer. This book was released on 2003-07-01 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume discusses the photoelectric behavior of three semiconducting thin film materials hydrogenated amorphous silicon (a Si:H), nano porous titanium dioxide, and the fullerene C60. Despite the fundamental structural differences between these materials, their electronic properties are at least on the phenomenological level surprisingly similar, since all three materials have rather low carrier mobilities. In the last decade a Si:H has conquered large market segments in photo voltaics, fiat panel displays and detector applications. It is surely the most advanced and best understood of the three materials. Nano porous Ti02 is used successfully in a novel solar cell featuring an organic dye absorber. This product is now at the brink of commercialization, while electronic applica tions for C60 still appear to be in the exploration phase. At this stage it appears that some of the insight and many of the exper imental techniques used in the development of a Si:H may prove useful in the on going and yet very basic study of TiO2 and C60 thin films. This idea is the guideline to this book. Without being comprehensive on the part of amorphous silicon, it attempts to outline basic characterization schemes for the nano porous and fullerene materials, and to evaluate their potential for applications with respect to a reference, which is given by a Si:H.