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Book Characterization of Shallow Impurities in High Purity Gallium Arsenide and Indium Phosphide Using Photothermal Ionization Spectroscopy

Download or read book Characterization of Shallow Impurities in High Purity Gallium Arsenide and Indium Phosphide Using Photothermal Ionization Spectroscopy written by Bun Lee and published by . This book was released on 1989 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the characterization techniques, Hall-effect measurements, photothermal ionization spectroscopy (PTIS), and photoluminescence (PL). These quantitative analyses have been made on over 500 different GaAs samples provided from about 50 different laboratories and 50 different InP samples from 15 different laboratories as grown by the growth techniques of liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD). With these quantitative analyses, the incorporation and amphoteric behavior of Group IV impurities have been correlated with the growth techniques and various independent growth parameters, particularly V/III ratios and substrate orientations. The spectroscopic analysis indicates that the relative ordering of central cell correction of shallow donor impurities in InP are identical to that of GaAs, but the amphoteric behavior of Si in LPE InP is opposite to that in LPE GaAs. Although Ge was always more amphoteric than Si, the values of amphoteric ratios of both Si and Ge in GaAs (100) layers were not noticeably changed with varying V/III ratios or other growth conditions for all of the growth techniques. The orientation dependent amphoteric behavior of Si, Ge, and C in MBE and AsCl$sb3$-MBE GaAs samples strongly suggests that the surface kinetic reactions during epitaxial growth play the dominant role in the amphoteric behavior. Obviously, the above results on the amphoteric behavior cannot be explained by the simple equilibrium thermodynamic consideration alone. The surface kinetic model has been developed to explain the amphoteric behavior of Group IV impurities in MBE and VPE GaAs. The major surface reactions for impurity incorporation involve adsorption, surface diffusion, dissociative chemisorption, and desorption, which are the rate limiting processes that can be different for different substrate orientation and different chemical impurity and/or source species used for the different growth techniques.

Book Identification and Characterization of Shallow Impurity States in Gallium Arsenide and Indium Phosphide Using Photothermal Ionization Spectroscopy

Download or read book Identification and Characterization of Shallow Impurity States in Gallium Arsenide and Indium Phosphide Using Photothermal Ionization Spectroscopy written by Thomas Stanley Low and published by . This book was released on 1985 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Comprehensive Dissertation Index

Download or read book Comprehensive Dissertation Index written by and published by . This book was released on 1989 with total page 1016 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Dissertation Abstracts International

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1990 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low Temperature Magneto photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide

Download or read book Low Temperature Magneto photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide written by Babya Sachi Bose and published by . This book was released on 1989 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique remains inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system is installed along with a tunable dye laser, which provides resonant excitation. Donors in high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions in a high magnetic field and at liquid helium temperature. This technique is successfully used to identify donors in n-type GaAs as well as in p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (311)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) is investigated using photoluminescence. Si acceptors in MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor in high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Epitaxial Growth and Characterization of Indium Phosphide and Gallium Indium Arsenide by Metalorganic Chemical Vapor Deposition

Download or read book Epitaxial Growth and Characterization of Indium Phosphide and Gallium Indium Arsenide by Metalorganic Chemical Vapor Deposition written by Kam Tai Chan and published by . This book was released on 1986 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Physics Briefs

Download or read book Physics Briefs written by and published by . This book was released on 1989 with total page 890 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low Pressure Metalorganic Chemical Vapor Deposition and Characterization of Indium Phosphide and Indium Gallium Arsenide

Download or read book Low Pressure Metalorganic Chemical Vapor Deposition and Characterization of Indium Phosphide and Indium Gallium Arsenide written by Robert Hickman and published by . This book was released on 1994 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Semiconductor Material and Device Characterization

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Book Growth and Characterization of Indium Gallium Phosphide on Gallium Arsenide by Gas Source Molecular Beam Epitaxy System and Its Applications to Heterostructures

Download or read book Growth and Characterization of Indium Gallium Phosphide on Gallium Arsenide by Gas Source Molecular Beam Epitaxy System and Its Applications to Heterostructures written by Dhrubes Biswas and published by . This book was released on 1993 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown. Samples studied were grown on (100) GaAs substrates under various growth conditions. Reproducible growth conditions have been established with respect to optimisation of pressure and temperature so as to achieve good material properties. Structural characterization using X ray has been carried out for the determination of material composition and evaluation of crystal quality. Very narrow full width at half maxima values indicated good crystal quality. Additionally, cross-sectional TEM has shown smooth heterointerface. Subsequent to this, good hall mobility at room temperature and at 77K, confirmed the material quality. Photoluminescence has been utilized for the evaluation of the E$\sb0$ gap. The PL exhibited very narrow full width at half maxima for lattice matched composition. Apart from evaluation of the E$\sb1$ gap, spectroscopic ellipsometry has been used to investigate the compositional dependence of the E$\sb1$ gap (and its broadening). P-type modulation doped heterostructures has been implemented using InGaP/GaAs, demonstrating two dimensional hole gas (2DHG) with good p-type hole mobilities measured from room temperature up to very low temperatures. The approximate constant value of mobility in the low temperature region strongly confirms the presence of 2DHG. A simple model has been formulated for the estimation of valence band discontinuity from the measured 2DHG data at cryogenic temperatures. Heterostructure Bipolar Transistor has been demonstrated using InGaP/GaAs system with the realisation of good current gain and low offset voltages. The double heterostructure bipolar transistor showed even smaller offset voltages. The classical V$\sb{CE}$ versus I$\sb{c}$ plots and gummel plots for the devices shows an ideality factor close to unity for I$\sb{c}$ and other usual characteristic features.