Download or read book Characterization of Semiconductor Crystals and Device Materials by X Ray Topography written by A. Lindegaard-Andersen and published by . This book was released on 1987 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Non destructive X ray Characterization of Wide bandgap Semiconductor Materials and Device Structures written by Nadeemullah A. Mahadik and published by . This book was released on 2008 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work non-destructive x-ray characterization techniques have been used to study undoped and intentionally doped bulk and epitaxial layers, and device structures of wide bandgap semiconductor materials, GaN and SiC. Novel non-destructive x-ray characterization methods were developed to evaluate the uniformity of strain in AlGaN/GaN device structures across the wafer and the results were correlated with device electrical characteristics. In-situ bias induced strain measurements were also carried out for the first time on the AlGaN/GaN Schottky diodes to estimate change in piezoelectric polarization charge at the heterojunction interface with the gate bias voltage. A variety of high resolution x-ray measurements were performed on freestanding Gallium Nitride (GaN) films grown by three different laboratories using hydride phase vapor epitaxy (HVPE) technique. The lattice parameters of the quasi-bulk films were obtained using high-resolution x-ray diffraction spectra. The crystalline quality of the films was determined by measuring the x-ray rocking curves and by ^71 Ga nuclear magnetic resonance (NMR) technique. The anisotropic in-plane strain was determined using a novel grazing incidence x-ray diffraction technique (GID) and conventional x-ray diffraction measurements. Based on these measurements the best free standing films have surface strain anisotropy of 4.0791 x 10^-3 up to a depth of 0.3 [Mu]m and the dislocation density is in the range of 10^5-10^7 /cm^2. High resolution x-ray topography (HRXT) measurements were also performed on the freestanding GaN films. Complete mapping of defects for the entire surface of the GaN films was obtained in a non-destructive way. From these measurements, the lateral dimensions of crystallites and cavities in the films are in the range, 200-500 nm, and 0.5-400 [Mu]m, respectively. The GaN films were found to be warped with a radius of curvature of about 0.5 m. The warpage is attributed to thermal mismatch between GaN and the sapphire substrate during growth. The characteristics of freestanding GaN films measured in this work are detrimental to the fabrication of high-speed devices such as high electron mobility transistors (HEMT) because their performance is highly dependent on the surface and interface quality. High resolution x-ray measurements were also performed on Al+ ion-implanted 4H-Silicon Carbide (SiC) epitaxial layers, before and after 30s ultra-fast microwave annealing in the temperature range 1750-1900 °C, to examine the crystalline quality of the material. Based on the FWHM values of the rocking curves, an improvement in the crystalline quality of the microwave annealed samples was observed compared to the conventional furnace annealed sample. The sample annealed at 1900 °C showed the best rocking curve FWHM of 9 " 2 arcsecs, which not only confirmed annihilation of the defects introduced during the Al+ ion-implantation process, but also an improvement in crystalline quality over the as-grown virgin 4H-SiC sample that had a rocking curve FWHM of 18.7 " 2 arcsecs. The theoretical and measured rocking curve FWHM values were obtained and correlated with the depth dependent microwave absorption in the SiC epilayer. These results are very significant for optimizing the annealing parameters to achieve the highest possible implant activation, carrier mobility and crystal quality. Magnesium ion-implantation doped GaN films were also characterized using x-ray diffraction measurements after microwave annealing in the temperature range of 1300 °C - 1500 °C for 5 - 15 s. The FWHM values of the in-situ Mg-doped samples did not change with the microwave annealing for 5 s anneals. The electrical measurements on these samples also showed poor electrical activation of the Mg-implant in the GaN films. These results may be due to the presence of a high concentration of implant generated defects still remaining in the material, even after high temperature annealing for 5 s. From the FWHM values, the 15 s annealing showed an improvement in the crystalline quality of the GaN samples. Also the x-ray diffraction measurements show activation of the Mg implant. Electrical conductivity was observed in these samples, which is due to significant improvement in the crystalline quality and sufficient activation of the Mg implant. In this work, x-ray measurements were also performed on AlGaN/GaN device structures to study the effect of localized strain on the transport measurements across the wafer. The map of in-plane strain of the AlGaN/GaN HEMT wafer showed a one-to-one correspondence with the variation in electrical resistivity. The in-plane strain variation is in the range of 2.295x10^-4 - 3.539x10^-4 resulting in a sheet resistance variation of 345 - 411. The in-situ high resolution x-ray diffraction measurements, performed on the AlGaN/GaN device structures under variable bias conditions, showed in-plane tensile strain for forward bias conditions, and compressive strain for reverse bias. A linear variation in the strain was observed with the bias voltage, which results in a change in the piezoelectric charge at the AlGaN/GaN interface with bias. This variation needs to be considered for the correct modeling of the device transport characteristics.

Download or read book Crystal Growth And Characterization Of Advanced Materials Proceedings Of The International School On Crystal Growth And Characterization Of Advanced Matherials written by A N Christensen and published by World Scientific. This book was released on 1988-12-31 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents:Fundamental Aspects of Crystal Growth from the Melt (C Paorici & L Zanotti)Phase Diagrams in Crystal Growth (A N Christensen)Growth Procedures and Perfection of Semiconductor Materials (A Lindegaard-Andersen)Atomistic Aspects of Crystal Growth and Epitaxy (I Markov)Fundamentals of Liquid Phase Epitaxial Growth (P Kordos)Determination of Few Selected Basic Parameters of the Investigation of AIII-BV Semiconductors Using X-Ray Methods (H Bruhl)Multijunction Solar Cells (I Chambouleyron)Application of the Mossbauer Spectroscopy to the Study of Magnetic Materials (G Albanese)Metallic Magnetism in Modern Materials (D Givord)and others Readership: Materials scientists.

Download or read book X Ray Diffraction Topography written by B. K. Tanner and published by Elsevier. This book was released on 2013-10-22 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt: X-Ray Diffraction Topography presents an elementary treatment of X-ray topography which is comprehensible to the non-specialist. It discusses the development of the principles and application of the subject matter. X-ray topography is the study of crystals which use x-ray diffraction. Some of the topics covered in the book are the basic dynamical x-ray diffraction theory, the Berg-Barrett method, Lang's method, double crystal methods, the contrast on x-ray topography, and the analysis of crystal defects and distortions. The crystals grown from solution are covered. The naturally occurring crystals are discussed. The text defines the meaning of melt, solid state and vapour growth. An analysis of the properties of inorganic crystals is presented. A chapter of the volume is devoted to the characteristics of metals. Another section of the book focuses on the production of ice crystals and the utilization of oxides as laser materials. The book will provide useful information to chemists, scientists, students and researchers.

Download or read book X ray Topography and Crystal Characterization written by David Keith Bowen and published by . This book was released on 1999 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book X ray Scattering from Semiconductors written by Paul F. Fewster and published by World Scientific. This book was released on 2000 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: X-ray scattering is used extensively to provide detailed structural information about materials. Semiconductors have benefited from X-ray scattering techniques as an essential feedback method for crystal growth, including compositional and thickness determination of thin layers. The methods have been developed to reveal very detailed structural information concerning material quality, interface structure, relaxation, defects, surface damage, and more.

Download or read book Analytical and Diagnostic Techniques for Semiconductor Materials Devices and Processes 7 written by Dieter K. Schroder and published by The Electrochemical Society. This book was released on 2007 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diagnostic characterization techniques for semiconductor materials, devices and device processing are addressed at this symposium. It will cover new techniques as well as advances in routine analytical technology applied to semiconductor process development and manufacture. The hardcover edition includes a CD-ROM of ECS Transactions, Volume 10, Issue 1, Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007). The PDF edition also includes the ALTECH 2007 papers.

Download or read book Defect Characterization and Stress Analysis by White Beam Synchrotron X ray Topography in Single Crystal Semiconducting Materials written by Vishwanath Sarkar and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book State of the Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors Photonics and Electronics IV written by R. F. Kopf and published by The Electrochemical Society. This book was released on 2003 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book X ray Scattering From Semiconductors 2nd Edition written by Paul F Fewster and published by World Scientific. This book was released on 2003-07-07 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

Download or read book ACCGE 2015 Abstracts eBook written by American Association for Crystal Growth (AACG) and published by Coe Truman International, LLC. This book was released on 2015-07-15 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electronic Materials Symposium.

Download or read book Recent Advances in X ray Characterization of Materials written by Padmanabhan Krishna and published by Pergamon. This book was released on 1989 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Materials and Process Characterization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.

Download or read book Semiconductor Characterization written by W. Murray Bullis and published by American Institute of Physics. This book was released on 1996 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt: Market: Those in government, industry, and academia interested in state-of-the-art knowledge on semiconductor characterization for research, development, and manufacturing. Based on papers given at an International Nist Workshop in January 1995, Semiconductor Characterization covers the unique characterization requirements of both silicon IC development and manufacturing, and compound semiconductor materials, devices, and manufacturing. Additional sections discuss technology trends and future requirements for compound semiconductor applications. Also highlighted are recent developments in characterization, including in- situ, in-FAB, and off-line analysis methods. The book provides a concise, effective portrayal of industry needs and problems in the important specialty of metrology for semiconductor technology.

Download or read book Semiconductor Heteroepitaxy Growth Characterization And Device Applications written by B Gil and published by World Scientific. This book was released on 1995-12-15 with total page 714 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.

Download or read book Publications of the National Bureau of Standards Catalog written by United States. National Bureau of Standards and published by . This book was released on 1975 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: