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Book Silicon Nanowire Transistors

Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.

Book Electrical Characterization and Gate Bias Reliability of Junctionless and Inversion Mode Gate All Around Poly Silicon Nanowire Transistors

Download or read book Electrical Characterization and Gate Bias Reliability of Junctionless and Inversion Mode Gate All Around Poly Silicon Nanowire Transistors written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fabrication and Characterization of the Polycrystlline Nanowires Thin Fim Transistor with Novel Gate all around Structure for Non volatie Memories

Download or read book Fabrication and Characterization of the Polycrystlline Nanowires Thin Fim Transistor with Novel Gate all around Structure for Non volatie Memories written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Strain Engineered Si Ge Nanowire Heterostructures and Josephson Junction Field effect Transistors for Logic Device Applications

Download or read book Strain Engineered Si Ge Nanowire Heterostructures and Josephson Junction Field effect Transistors for Logic Device Applications written by Feng Wen and published by . This book was released on 2020 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: There has been relentless effort on the physical scaling of silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs) in pursuit of higher computing power in the past decades. Silicon and germanium (Ge) based nanowires are compatible with the standard Si process and promising for the ultimately scaled devices, by allowing the gate-all-around geometry and integration of strain engineering through radial heterostructures to address device-scaling limitations. In the first part of the thesis, advances in probing the strain of radial nanowire heterostructures and carrier mobility enhancement through strain engineering are presented. We present a sequence of structural characterization techniques for Ge-Si [subscript x] Ge [subscript 1-x] and Si-Si [subscript x] Ge [subscript 1-x] core-shell nanowires that extends to all types of Si-Ge radial nanowire heterostructures examined in the thesis. We combine planar and cross-sectional transmission electron microscopy to identify the crystal structure, orientation and morphology of the nanowire heterostructures. We then apply continuum elasticity model to calculate the strain distribution, which coupled with the lattice dynamic theory yields the Ge-Ge or Si-Si Raman modes under strain, showing good agreement with the experimental values acquired via Raman spectroscopy. We also study the electrical properties of Si [subscript x] Ge [subscript 1-x]-Si core-shell nanowires by fabricating and characterizing n-type MOSFETs, and show that the tensile strain in the Si shell leads to a 40% electron mobility enhancement compared to bare Si nanowire MOSFETs. Additionally, we demonstrate both n-type and p-type MOSFETs using Si [subscript x] Ge [subscript 1-x]-Ge-Si core-double-shell nanowires as channel, designed so that holes populate the Ge shell and electrons populate the Si shell, with mobility enhancement of both carriers thanks to the compressive and tensile strain in the respective region. We also extract the valence band offset from the decoupled hole transport in the two shells at low temperature, overcoming the issue that most techniques available to probe the band structure in planar heterostructures are not promptly applicable. Reducing the operation temperature provides an additional path for system optimization in addition to the shrinking of device geometry. In the second part of the thesis, we explore a Boolean logic device suitable for cryogenic computing. We execute a combined effort of modeling and experimental characterization to examine the feasibility of Josephson junction field-effect transistors (JJ-FETs) for logic device applications at low temperatures. JJ-FETs are similar to MOSFETs, with their source and drain electrodes being superconducting at the operation temperature. We develop a compact model for JJ-FETs operating in the short ballistic regime, and perform circuit level simulations to investigate the criteria of signal restoration and fan-out for JJ-FET logic gates. We also experimentally demonstrate the operation of JJ-FETs based on an InAs quantum well heterostructure platform. We perform self-consistent Poisson-Schrödinger simulations, finding different gate voltage regimes where carriers populate one or more subbands in different vertical positions of the heterostructure. Furthermore, we extend the short ballistic model to interpret the experimental data, and discuss the impact of a low oxide/channel interface quality on the implementation of practical JJ-FET logic devices

Book Fabrication and Characterization of High Performance Silicon Nanowire Field Effect Transistors

Download or read book Fabrication and Characterization of High Performance Silicon Nanowire Field Effect Transistors written by Muhammad Maksudur Rahman and published by . This book was released on 2011 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quasi one-dimensional (1-D) field-effect transistors (FET), such as Si nanowire FETs (Si NW-FETs), have shown promise for more aggressive channel length scaling, better electrostatic gate control, higher integration densities and low-power applications. At the same time, an accurate bench-marking of their performance remains a challenging task due to difficulties in definition of the exact channel length, gate capacitance and transconductance. In 1-D Si FETs, one also often observes a significant degradation of their mobility and on/off ratio. The goal of this study is to implement the idea of the FET performance enhancement while simultaneously performing a more rigorous data extraction. To achieve these goals, we fabricated dual-gate undoped Si NW-FETs with various NW diameters The Si NWs are grown by Au-catalyzed vapor-transport For our top-gate NW-FET, the subthreshold swing was determined to be 85-90 mV/decade, whereas the best subthreshold swings for Si NW-FETs until now were ~135-140 mV/decade. We achieved a ON/OFF current ratio of 10 7 due to improved electrostatic control and electron transport conditions inside the channel. This is on the higher end of any ON/OFF ratios thus far reported for NW FETs The hole mobility in our NW-FETs was around 250.400 cm[superscript 2] /Vs, according to different extraction procedures. In our mobility calculations we included the NW silicidation effect, which reduces the effective channel length. We calculated the top gate capacitance using Technology Computer Aided Design (TCAD) Sentaurus simulator, which gives more accurate value of capacitance of the NW over any analytical formulas. Thus we fabricate and rigorously study Si NW.s intrinsic properties which are very important for digital logic circuit application. In the second part of the study, we carried out simulation of Si NW FET devices to shed light on the carrier transport behavior that also explains experimental data.

Book JJAP

    JJAP

    Book Details:
  • Author :
  • Publisher :
  • Release : 2010
  • ISBN :
  • Pages : 1570 pages

Download or read book JJAP written by and published by . This book was released on 2010 with total page 1570 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book High Throughput Manufacturing of Silicon Nanobridges for the Fabrication of 3D Gate all around Field Effect Transistors

Download or read book High Throughput Manufacturing of Silicon Nanobridges for the Fabrication of 3D Gate all around Field Effect Transistors written by Jin Yong Oh and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Self-assembled nanowires chemically synthesized by bottom-up approaches have attracted considerable attention due to their properties that are not common in their bulk or thin film counterparts. Their potential to offer novel functionality opens up opportunities for innovative genres of devices. Indeed, a number of innovative devices, such as transistors, diodes, bio/chemical sensors, photovoltaic devices, and even embryonic low-density integrated circuits, have been demonstrated by using various kinds of nanowires. In contrast to nanostructured materials created by the microfabrication technology pursued by the microelectronics industry, self-assembled nanowires inheritedly exhibit a high degree of variability in their dimensions, densities, locations, and alignment, etc. Despite the promise of nanowires, such uncertainty prevents them from utilization in mass-manufacturing processes and large-scale device integration. This dissertation aimed to devise a viable and high-throughput growth-in-place technique for creating well-ordered nanowire arrays without costly and tedious post-growth processing. This dissertation also intended to demonstrate novel devices using the nanobridges created by the growth-in-place technique and nanowire ensembles. In the first section of the dissertation, a couple of popular modalities for creating nanowire devices, including growth-in-place techniques, were briefly reviewed to improve our understanding of their various aspects. Among multiple bottom-up growth techniques, a revised nanobridging technique with new process recipes for depositing catalytic gold nanoparticles was explored to enhance its repeatability and throughput. Yields of the nanobridges were improved with the new schemes such as adding HF acid to nanoparticle colloid and employing a surface linker treatment on the substrate for catalyst deposition while maintaining deposition selectivity. This dissertation demonstrated that Si nanobridges could become building blocks of 3D gate-all-around FETs, charge-trap nonvolatile memory devices, and photosensitive transistors. Here, high yields of the nanobridges with improved arrangement allowed integration of multiple devices per batch. The nanobridge FETs showed successful switching characteristics, and the nanobridge memory devices showed low voltage programming/erasing operations due to the enhanced electric fields exerted by the surround gate. High photosensitivity of the off currents of the nanobridge MOSFET offered an opportunity to create novel electro-optical switching devices. Although these bridge devices exhibited proof-of-concept level performance and needed far more optimization for attaining competitive performance, they showed the feasibility of expanding the realm of nanobridge applications. Other than exploring the bottom-up approach of synthesizing nanowires right onto the electrodes in a well-organized fashion, the dissertation looked into protocols for maneuvering 1D nanostructure ensembles and manufacturing devices thereof. Exploiting nanowire ensemble en masse is attractive because this approach allows substrate recycling and simple device fabrication. One example of nanowire ensemble devices was capacitive chemical sensors, which had nanowire ensembles in the active sensing regions. These sensors showed pH sensitivities as high as the theoretical limit owing to their surface areas and high-density surface sites. Another example was flexible 2D devices created by transferring and then interfacing 1D structures with elastomer (polyurethane) films. Here, the mechanism of harvesting 1D structures was discussed with the help of simulation-based analysis, and electrical interfacing of the transferred structures was presented for creating flexible devices. In the last part of this dissertation, the nanobridging technique was evaluated from the practical point of view, and its perspectives were discussed thoroughly. The presented nanobridging technique seems to be uncompetitive compared to the matured and state-of-the-art modern microfabrication technology. However, the work carried out in this dissertation indicates that the bridging technique can help integrating heteroepitaxial nanowires on the Si platform. In particular, catalyst-free heteroepitaxial growth of nanowires on Si substrates can help the continuation of the microelectronics paradigm, 'Saller and Faster,' typically represented by 'Moore's Law.'