Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1987 with total page 832 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.

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Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Conference Papers Index written by and published by . This book was released on 1979 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monthly. Papers presented at recent meeting held all over the world by scientific, technical, engineering and medical groups. Sources are meeting programs and abstract publications, as well as questionnaires. Arranged under 17 subject sections, 7 of direct interest to the life scientist. Full programs of meetings listed under sections. Entry gives citation number, paper title, name, mailing address, and any ordering number assigned. Quarterly and annual indexes to subjects, authors, and programs (not available in monthly issues).

Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2013-10-22 with total page 805 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

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Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 1995-06-30 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

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