Download or read book Characterization of Hot carrier Degradation in MOSFET s by Noise and Surface Recombination Currents written by Amanda Shiu-Tan Cheng and published by . This book was released on 1996 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Download or read book Characterization of Hot carrier Induced Degradation Via Small signal Characteristics in Mosfets written by Mei Po Mabel Lau and published by . This book was released on 2001 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analytical Techniques for Semiconductor Materials and Process Characterization 6 ALTECH 2009 written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2009-09 with total page 479 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of ALTECH 2009 address recent developments and applications of analytical techniques for semiconductor materials, processes and devices. The papers comprise techniques of elemental and structural analysis for bulk and surface impurities and defects, thin films as well as dopants in ultra-shallow junctions.

Download or read book Characterization of Hot Carrier Damage in N and P channel MOSFETs written by Janet L. Zamora-Moya and published by . This book was released on 1998 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Hot carrier Degradation in Submicrometer MOS Transistors written by Diing Shenp Ang and published by . This book was released on 1997 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Electrical characteristics and hot carrier degradation of H passivated P channel polysilicon SOI MOSFETS written by Ravindra B. Kovelamudi and published by . This book was released on 1992 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Hot carriers Induced Degradation in Mosfets Through Gate Capacitances Measurement at Room and Cryogenic Temperatures written by Clement Che Ta Hsu and published by . This book was released on 2001 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1094 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1994 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1990 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.