Download or read book Characterization of Deep Reactive Ion Etching DRIE for Via Formation in Chip Stacking Application written by Isibhakhomen Umolu Abhulimen and published by . This book was released on 2008 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Deep Reactive Ion Etching DRIE for Via Formation in Chip Stacking Applications written by Isibhakhomen Umolu Abhulimen and published by ProQuest. This book was released on 2008 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Aspect ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching DRIE Technique written by John Kangchun Perng and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-ratio) have been demonstrated using the modified three-pulse process. Capacitive resonators, SiBAR and IBAR devices have been fabricated using the process developed in this work. IBARs (15MHz) with ultra-high Q (210,000) have been reported.
Download or read book Design Fabrication and Characterization of a Compact Deep Reactive Ion Etching System for MEMS Processing written by Parker Andrew Gould and published by . This book was released on 2014 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: A general rule of thumb for new semiconductor fabrication facilities (Fabs) is that revenues from the first year of production must match the capital cost of building the fab itself. With modem Fabs routinely exceeding $1 billion to build, this rule serves as a significant barrier to entry for groups seeking to commercialize new semiconductor devices aimed at smaller market segments which require a dedicated process. To eliminate this cost barrier we are working to create a small-scale production suite of tools that will processes small (~1") substrates and cost less than $1 million. By shrinking the size of the substrate, substantial savings can be realized in material usage, energy consumption, and, most importantly, capital costs. In this thesis, we present the development of the first tool in this suite of small substrate processing equipment, a deep reactive ion etcher (DRIE). DRIE tools are used to create highly anisotropic, high aspect-ratio trenches in silicon-a crucial element in the production of many microelectromechanical systems (MEMS) devices. We are targeting the Bosch Process method of DRIE, which is a time multiplexed process that rapidly alternates between an SF6-based reactive ion etching (RIE) step that isotropically etches silicon and a C4F8-based plasma-enhanced chemical vapor deposition (PECVD) step that passivates the sidewalls of the etched features. The rapid alternation between the RIE and PECVD steps allows highly anisotropic features to be etched in silicon. The DRIE system developed in this thesis is roughly the size of a microwave oven and costs just a fraction of commercial etching systems. The test results presented herein characterize the stability and operating limits of the vacuum and plasma generation systems, and demonstrate the system's raw etching capability using a mix of SF6 and O2 process gases. Etch rates exceeding 4 [mu]m/min with control of the etched profile are reported, with models fitted to the data indicating increased capabilities with optimized process conditions.
Download or read book Characterization and Modeling of Pattern Dependencies and Time Evolution in Plasma Etching written by Ali Farahanchi and published by . This book was released on 2009 with total page 43 pages. Available in PDF, EPUB and Kindle. Book excerpt: A quantitative model capturing pattern dependent effects and time evolution of the etch rate in Deep Reactive Ion Etching (DRIE) is presented. DRIE is a key process for pattern formation in semiconductor fabrication. Non-uniformities are caused due to microloading and aspect ratio dependencies. The etch rate varies over time and lateral etch consumes some of the etching species. This thesis contributes a physical analysis for capturing and modeling microloading, aspect ratio dependencies, effects of lateral etch and time evolution of the etch rate. This methodology is applied to the study of etching variation on silicon wafers; the integrated model is able to predict pattern density and feature size dependent non-uniformities in trench depth and time evolution of the etch rate. Previous studies of variation in plasma etching have characterized microloading and aspect ratio dependent etching (ARDE) as distinct constant causes for etch non-uniformity. In contrast to these previous works, we present here a time-based methodology for vertical and lateral etch.
Download or read book Characterization of Reactive Ion Etching of III V Compound Semiconductor Materials written by Ebrahim Andideh and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period gratings with smooth etched surfaces and excellent stoichiometry in these compounds. Highly anisotropic structures with dimensions down to 300 A at a pitch of 600 A are demonstrated in InP. A selective RIE process for InGaAs on InAlAs in a CH$sb4$:H$sb2$ plasma has been developed and utilized to fabricate 0.26 $mu$m T-gate modulation doped field-effect transistors (MODFETs). The microwave measurements of reactive-ion-etched and wet-etched devices show identical performance. The RIE of GaAs and AlGaAs have been characterized in SiCl$sb4$ plasma chemistry. The optical, electrical and chemical properties of the etched materials have been investigated. The effects of different RIE parameters such as gas chemistry, RF power, and reactor pressure have been studied. The RIE of laser facets in the GaAs/AlGaAs/InGaAs material system and the growth on RIE-patterned GaAs substrates are reported. Selective RIE of GaAs on AlGaAs in SiCl$sb4$/SiF$sb4$ plasma is studied. A selectivity ratio of 350:1 has been obtained at low power. A small decrease in the saturation current of gateless MODFET structures has been observed after etching the GaAs cap layer and has been ascribed to low energy ion bombardment of the surface. This process is applied to the fabrication of 0.2 $mu$m T-gate pseudomorphic MODFETs. The dc and microwave performances of RIE and wet-etched devices are identical. For these short-gatelength devices, a threshold voltage standard deviation of only 30 mV is obtained for the reactive-ion-etched devices as compared to 230 mV for the wet-etched devices. This uniform distribution is essential to the realization of integrated circuits. Surface analysis methods, such as scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and Fourier transform infra-red spectroscopy (FTIR), have been utilized extensively to determine the chemistry of etched surfaces. Raman spectroscopy, Hall carrier mobility measurement and photoluminescence spectroscopy indicate insignificant electrical damage to the materials under optimal RIE conditions. Results of the surface analysis have been used to delineate optimum processes for the fabrication of the above devices.
Download or read book Transducers 01 Eurosensors XV written by Ernst Obermeier and published by Springer. This book was released on 2016-05-12 with total page 1763 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Conference is the premier international meeting for the presentation of original work addressing all aspects of the theory, design, fabrication, assembly, packaging, testing and application of solid-state sensors, actuators, MEMS, and microsystems.
Download or read book Handbook of 3D Integration Volume 3 written by Philip Garrou and published by John Wiley & Sons. This book was released on 2014-07-21 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading for materials scientists, semiconductor physicists, and those working in the semiconductor industry, as well as IT and electrical engineers.
Download or read book Nanostructure Based Sensors for Gas Sensing from Devices to Systems written by Sabrina Grassini and published by MDPI. This book was released on 2019-10-29 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state gas sensors based on microtransducers and nanostructured sensing materials is the key point in the design of portable measurement systems able to reach sensing and identification performance comparable with analytical ones. In such a context several efforts must be spent of course in the development of the sensing material, but also in the choice of the transducer mechanism and its structure, in the electrical characterization of the performance and in the design of suitable measurement setups. This call for papers invites researchers worldwide to report about their novel results on the most recent advances and overview in design and measurements for applications in gas sensors, along with their relevant features and technological aspects. Original research papers are welcome (but not limited) on all aspects that focus on the most recent advances in: (i) basic principles and modeling of gas and VOCs sensors; (ii) new gas sensor principles and technologies; (iii) Characterization and measurements methodologies; (iv) transduction and sampling systems; (vi) package optimization; (vi) gas sensor based systems and applications.
Download or read book Silicon Micromachining written by Miko Elwenspoek and published by Cambridge University Press. This book was released on 2004-08-19 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive overview of the key techniques used in the fabrication of micron-scale structures in silicon; for graduate students and researchers.
Download or read book Issues in Metal Research 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-05-01 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Metal Research / 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Cast Metals Research. The editors have built Issues in Metal Research: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Cast Metals Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Metal Research / 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Reliability of RoHS Compliant 2D and 3D IC Interconnects written by John H. Lau and published by McGraw Hill Professional. This book was released on 2010-10-22 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proven 2D and 3D IC lead-free interconnect reliability techniques Reliability of RoHS-Compliant 2D and 3D IC Interconnects offers tested solutions to reliability problems in lead-free interconnects for PCB assembly, conventional IC packaging, 3D IC packaging, and 3D IC integration. This authoritative guide presents the latest cutting-edge reliability methods and data for electronic manufacturing services (EMS) on second-level interconnects, packaging assembly on first-level interconnects, and 3D IC integration on microbumps and through-silicon-via (TSV) interposers. Design reliable 2D and 3D IC interconnects in RoHS-compliant projects using the detailed information in this practical resource. Covers reliability of: 2D and 3D IC lead-free interconnects CCGA, PBGA, WLP, PQFP, flip-chip, lead-free SAC solder joints Lead-free (SACX) solder joints Low-temperature lead-free (SnBiAg) solder joints Solder joints with voids, high strain rate, and high ramp rate VCSEL and LED lead-free interconnects 3D LED and 3D MEMS with TSVs Chip-to-wafer (C2W) bonding and lead-free interconnects Wafer-to-wafer (W2W) bonding and lead-free interconnects 3D IC chip stacking with low-temperature bonding TSV interposers and lead-free interconnects Electromigration of lead-free microbumps for 3D IC integration
Download or read book Handbook of 3D Integration Volume 1 written by Philip Garrou and published by John Wiley & Sons. This book was released on 2011-09-22 with total page 798 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first encompassing treatise of this new, but very important field puts the known physical limitations for classic 2D electronics into perspective with the requirements for further electronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The contributions come from key players in the field, from both academia and industry, including such companies as Lincoln Labs, Fraunhofer, RPI, ASET, IMEC, CEA-LETI, IBM, and Renesas.
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dry Etching Technology for Semiconductors written by Kazuo Nojiri and published by Springer. This book was released on 2014-10-25 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Towards a Modeling Synthesis of Two or Three Dimensional Circuits Through Substrate Coupling and Interconnections Noises and Parasites written by Christian Gontrand and published by Bentham Science Publishers. This book was released on 2014-04-21 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt: The number of transistors in integrated circuits doubles every two years, as stipulated by Moore’s law, and this has been the driving force for the huge development of the microelectronics industry in the past 50 years – currently advanced to the nanometric scale. This e-book is dedicated to electronic noises and parasites, accounting for issues involving substrate coupling and interconnections, in the perspective of the 3D integration: a second track for enhancing integration, also compatible with Moore’s law. This reference explains the modeling of 3D circuits without delving into the latest advances, but highlights crucial problems, for instance electro-thermo-mechanical problems, which could be addressed through 3D modeling. The book also explains electromagnetic interferences , at different modeling levels (device and circuit) oriented towards 3D integration technologies. It also covers substrate noise, such as disturbances of digital blocks, power bounces, phase noise in oscillators, both at the device level, such as carriers or field fluctuations, and circuit levels. The entanglement between interconnect and substrate is also discussed. This e-book serves as a reference for advanced graduates or researchers in the field of micro and nano electronics interested in topics relevant to electromagnetic interference or the ‘noise’ domain, at device or circuit and system levels
