Download or read book Large signal Characterization and Modeling of the Heterojunction Bipolar Transistor written by Douglas Andrew Teeter and published by . This book was released on 1992 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Download or read book Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors written by Kyounghoon Yang and published by . This book was released on 1994 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optoelectronic Integrated Circuit Design and Device Modeling written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2011-09-19 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techniques of lasers and photodiodes. Gao covers high-speed electronic semiconductor devices, optical transmitter design, and optical receiver design in the final three chapters. Addresses a gap within the rapidly growing area of transmitter and receiver modeling in OEICs Explains diode physics before device modeling, helping readers understand their equivalent circuit models Provides comprehensive explanations for E/O and O/E conversions done with laser and photodiodes Covers an extensive range of devices for high-speed applications Accessible for students new to microwaves Presentation slides available for instructor use This book is primarily aimed at practicing engineers, researchers, and post-graduates in the areas of RF, microwaves, IC design, photonics and lasers, and solid state devices. The book is also a strong supplement for senior undergraduates taking courses in RF and microwaves. Lecture materials for instructors available at www.wiley.com/go/gao
Download or read book Physics of High Speed Transistors written by Juras Pozela and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Download or read book Physics and Technology of Heterojunction Devices written by Institution of Electrical Engineers and published by IET. This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Download or read book Japanese Science and Technology written by and published by . This book was released on 1986 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book RF and Microwave Transmitter Design written by Andrei Grebennikov and published by John Wiley & Sons. This book was released on 2011-07-12 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF and Microwave Transmitter Design is unique in its coverage of both historical transmitter design and cutting edge technologies. This text explores the results of well-known and new theoretical analyses, while informing readers of modern radio transmitters' pracitcal designs and their components. Jam-packed with information, this book broadcasts and streamlines the author's considerable experience in RF and microwave design and development.
Download or read book Low power HF Microelectronics written by Gerson A. S. Machado and published by IET. This book was released on 1996 with total page 1072 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together innovative modelling, simulation and design techniques in CMOS, SOI, GaAs and BJT to achieve successful high-yield manufacture for low-power, high-speed and reliable-by-design analogue and mixed-mode integrated systems.
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Download or read book Low Dimensional and Nanostructured Materials and Devices written by Hilmi Ünlü and published by Springer. This book was released on 2015-12-01 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the fundamental phenomena at nanoscale. It covers synthesis, properties, characterization and computer modelling of nanomaterials, nanotechnologies, bionanotechnology, involving nanodevices. Further topics are imaging, measuring, modeling and manipulating of low dimensional matter at nanoscale. The topics covered in the book are of vital importance in a wide range of modern and emerging technologies employed or to be employed in most industries, communication, healthcare, energy, conservation , biology, medical science, food, environment, and education, and consequently have great impact on our society.
Download or read book Fundamentals of RF and Microwave Transistor Amplifiers written by Inder Bahl and published by John Wiley & Sons. This book was released on 2009-06-17 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2006-11-02 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the growth of high-speed telecommunications and wireless technology, it is becoming increasingly important for engineers to understand radio frequency (RF) applications and their sensitivity to electrostatic discharge (ESD) phenomena. This enables the development of ESD design methods for RF technology, leading to increased protection against electrical overstress (EOS) and ESD. ESD: RF Technology and Circuits: Presents methods for co-synthesizisng ESD networks for RF applications to achieve improved performance and ESD protection of semiconductor chips; discusses RF ESD design methods of capacitance load transformation, matching network co-synthesis, capacitance shunts, inductive shunts, impedance isolation, load cancellation methods, distributed loads, emitter degeneration, buffering and ballasting; examines ESD protection and design of active and passive elements in RF complementary metal-oxide-semiconductor (CMOS), RF laterally-diffused metal oxide semiconductor (LDMOS), RF BiCMOS Silicon Germanium (SiGe), RF BiCMOS Silicon Germanium Carbon (SiGeC), and Gallim Arsenide technology; gives information on RF ESD testing methodologies, RF degradation effects, and failure mechanisms for devices, circuits and systems; highlights RF ESD mixed-signal design integration of digital, analog and RF circuitry; sets out examples of RF ESD design computer aided design methodologies; covers state-of-the-art RF ESD input circuits, as well as voltage-triggered to RC-triggered ESD power clamps networks in RF technologies, as well as off-chip protection concepts. Following the authors series of books on ESD, this book will be a thorough overview of ESD in RF technology for RF semiconductor chip and ESD engineers. Device and circuit engineers working in the RF domain, and quality, reliability and failure analysis engineers will also find it a valuable reference in the rapidly growing are of RF ESD design. In addition, it will appeal to graduate students in RF microwave technology and RF circuit design.
