Download or read book Characterization and Fabrication of alpha 6H SiC as a Piezoresistive Pressure Sensor for High Temperature Applications written by Robert Sylvester Okojie and published by . This book was released on 1996 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MEMS written by Mohamed Gad-el-Hak and published by CRC Press. This book was released on 2005-11-29 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thoroughly revised and updated, the new edition of the best-selling MEMS Handbook is now presented as a three-volume set that offers state-of-the-art coverage of microelectromechanical systems. Through chapters contributed by top experts and pioneers in the field, MEMS: Design and Fabrication presents a comprehensive look at the materials, procedures, tools, and techniques of MEMS fabrication. New chapters in this edition examine the materials and fabrication of polymer microsystems and optical diagnostics for investigating the entrance length in microchannels. Rigorous yet accessible, this volume provides the practical knowledge needed for work in cutting-edge MEMS applications.
Download or read book The MEMS Handbook written by Mohamed Gad-el-Hak and published by CRC Press. This book was released on 2001-09-27 with total page 1386 pages. Available in PDF, EPUB and Kindle. Book excerpt: The revolution is well underway. Our understanding and utilization of microelectromechanical systems (MEMS) are growing at an explosive rate with a worldwide market approaching billions of dollars. In time, microdevices will fill the niches of our lives as pervasively as electronics do right now. But if these miniature devices are to fulfill their mammoth potential, today's engineers need a thorough grounding in the underlying physics, modeling techniques, fabrication methods, and materials of MEMS. The MEMS Handbook delivers all of this and more. Its team of authors-unsurpassed in their experience and standing in the scientific community- explore various aspects of MEMS: their design, fabrication, and applications as well as the physical modeling of their operations. Designed for maximum readability without compromising rigor, it provides a current and essential overview of this fledgling discipline.
Download or read book Piezoresistive Effect of p Type Single Crystalline 3C SiC written by Hoang-Phuong Phan and published by Springer. This book was released on 2017-04-06 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.
Download or read book Piezoresistor Design and Applications written by Joseph C. Doll and published by Springer Science & Business Media. This book was released on 2013-10-30 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Piezoresistor Design and Applications provides an overview of these MEMS devices and related physics. The text demonstrates how MEMS allows miniaturization and integration of sensing as well as efficient packaging and signal conditioning. This text for engineers working in MEMS design describes the piezoresistive phenomenon and optimization in several applications. Includes detailed discussion of such topics as; coupled models of mechanics, materials and electronic behavior in a variety of common geometric implementations including strain gages, beam bending, and membrane loading. The text concludes with an up-to-date discussion of the need for integrated MEMS design and opportunities to leverage new materials, processes and MEMS technology. Piezoresistor Design and Applications is an ideal book for design engineers, process engineers and researchers.
Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Download or read book Thermoelectrical Effect in SiC for High Temperature MEMS Sensors written by Toan Dinh and published by Springer. This book was released on 2018-10-05 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.
Download or read book Design and Characterization of 6H SiC Devices for High power and High temperature Applications written by Nudjarin Ramungul and published by . This book was released on 1998 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Pressure Sensors for High Temperature Applications written by Sheng Jin and published by . This book was released on 2011 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2092 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of Piezoresistive Pressure Sensors Including the Study of Electrochemical Etch stop written by Ben Kloeck and published by . This book was released on 1989 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development and Characterization of the 3C SiC SOI Material System for High Temperature Piezoresistive Pressure Microsensors written by Stefan Zappe and published by . This book was released on 2002 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Thin Film Pressure Sensors Using Novel Materials written by Victor Samoei and published by . This book was released on 2020 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin-film pressure sensors have received widespread attention in recent times due to its ease of manufacture, characterization, and fatigue strength. Commercial fabrication of these sensors is inexpensive and compatible with the current manufacturing technologies. It has been found that the sensitivity of the flexible pressure sensor depends on the sensing pressure, the microstructural dispersion of nanoparticles, and the compatibility of the binder and the nanoparticles. The binder/particle dispersion should be such that it facilitates the formation of a greater number of conduction paths with a slight change in sensing pressure. The objective of this thesis includes the fabrication and characterization of a thin-film pressure sensor using different novel materials. The first material to be investigated was ZnO. ZnO thin-film materials that have received a great deal of attention due to its unique properties of being a semiconductor with wide bandgap and piezoelectric effect. The sensor characteristic of ZnO was compared with barium-titanate (BaTiO3) Gallium arsenic (GaAs) and Polyvinylidene fluoride (PVDF). The second material to be investigated was aluminum-doped zinc oxide (AZO). AZO has attracted a great deal of attention in many applications because of its nontoxicity, abundancy, and lower cost than other materials such as indium tin oxide (ITO). The AZO films were deposited on polyethylene (PE) substrates by a radiofrequency (rf) magnetron sputtering method. The piezoresistive sensor was tested for different pressures in vacuum and gage pressure conditions. The response characteristics indicated that resistance increased with the bending of the AZO layer in both compressive and tensile operation modes. The sensor characteristics exhibited that the AZO piezoresistive sensor can be used to measure ambient pressure quantitatively. This investigation indicated that AZO can be used as an alternative material for the fabrication of pressure sensors. Lastly, the materials that were investigated are carbon black/ Poly (vinylidene fluoride) (CB/PVDF), graphene/PMMA, and graphene/PVDF composites. The conductive CB/PVDF material was prepared by the wet-cast method and deposited into a flexible polyethylene (PE) substrate, while the graphene composites were prepared by the solvent cast method. The surface morphology, crystal structure, and material properties were studied using SEM and X-ray diffraction methods. Sensitivity, response time, and recovery time were analyzed by testing the sample in the deferent pressure range and vibration modes. The repeatability and reproducibility characteristics of the sensor were studied and found that the sensor exhibits excellent characteristics. The sensors were subjected to different loading/unloading pressures. The resistance of the sensor remained stable indicating that the sensor had a high degree of reproducibility.
Download or read book Radiation Effect on SiC Piezoresistive Pressure Sensor written by Peilai Zhang and published by . This book was released on 2008 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: SiC piezoresistive pressure sensors were developed at NASA Glenn Research Center for high temperature applications. They have demonstrated good sensing capabilities up to 600°C. The wide band gap of SiC, its high thermal conductivity and high radiation resistance, compared to other conventional semiconductor materials, makes piezoresistive pressure sensors suitable for high radiation environments. In this thesis, the performance of the SiC piezoresistive pressure has been evaluated in gamma and mixed gamma/neutron irradiation fields.
Download or read book Characteristics of a Hermetic 6H SIC Pressure Sensor at 600oC written by R. S. Okojie and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiC Microsensor with Piezoresistive Diamond Sensing Elements written by and published by . This book was released on 1992 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced microfabrication processes have been developed for novel high temperature pressure sensors utilizing diamond and SiC materials. Such sensors represent a new generation of high temperature piezoresistive sensors. The accomplishments of Phase I include the following: (a) Growth of polycrystalline diamond on Beta-SiC substrates. (b) The first isolated p-type diamond resistive elements grown on intrinsic diamond. (c) Establishment of microfabrication processes for sensor manufacture. (d) Demonstration of a large piezoresistive effect in poly-diamond. (e) Demonstration of a new field- assisted-bonding process which allows dielectrically isolated SiC elements to be formed.
Download or read book A Study on the Deep Etching and Ohmic Contact Process of 6H SiC High temperature Pressure Sensor written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
