Download or read book Characterization and Development of the 4H SiC SiO2 Interface for Power MOSFET Applications written by Alberto Salinaro and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Simulation Modeling and Characterization of SiC Devices written by Liangchun Yu and published by . This book was released on 2010 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.

Download or read book Characterization of the Origin of Mobility Loss at the SiC SiO2 Interface written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide band gap semiconductor with material properties which make it ideally suited for high temperature, high frequency, and high power metal oxide semiconductor field effect transistor (MOSFET) applications. The wide scale commercial development of these devices has been hindered due to disappointing electron mobility when compared to properties of the bulk material. This mobility loss has been associated with the interface between SiC and the native oxide formed (SiO2). Many improvements in mobility have been realized, but it is currently still significantly less than that of the bulk material. The work in this dissertation is aimed at understanding the origin of this mobility loss from an atomic perspective. Analytical electron microscopy techniques including scanning transmission electron microscopy (STEM), Z-contrast imaging, electron energy loss spectroscopy (EELS), convergent beam electron diffraction (CBED) are used in this study to characterize the 4H-SiC/SiO2 interface. The effect of aluminum implantation, nitric oxide annealing, oxidation rate, and activation annealing temperature on the interface was examined. We found a carbon rich transition layer present on the SiC side of the interface which varies in thickness depending on processing conditions. The thickness of this transition region is linearly related to the electron mobility. We were also able to determine that this transition region occurs as a result of the oxidation process. During oxidation, carbon interstitials are emitted on both sides of the interface, causing a carbon pileup on the SiC side of the interface, which we detect as a transition region. The rate of oxidation is also very important as oxidizing at a fast rate leads greater carbon pileup. The extra carbon in this transition region acts as electron scattering centers, which ultimately lead to a reduced electron mobility. This study is able to directly correlate the microstructure on an atomic scale with.

Download or read book Silicon Carbide DMOSFET Characterization and Evaluation for Power Electronics Applications written by Ronald Green and published by . This book was released on 2010 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: As SiC MOSFET technology continues to mature, an assessment of device reliability becomes essential for the development of large power modules utilizing this technology. This dissertation investigated state-of-the-art 4H-SiC DMOSFETs for continuous power electronics applications. The research methodology consisted of performing a variety of electrical measurements that characterized device performance, and studied device stability and reliability. A 400-A power module utilizing SiC MOSFET technology was fabricated, tested and implemented in a continuous power conversion application circuit. The module features an integrated heat sink design and form factor that is compliant to commercial IGBT modules with similar rating. Switch-mode testing of the module in a power converter circuit demonstrated operation at 25 kW and 30 kHz switching frequency with an ambient temperature of 80°C. On-state performance of 1200 V class SiC MOSFET devices is currently limited by charge trapping at the SiC-SiO2 interface. As a result, the channel mobility is very low (much ≈ 20 cm 2/V·s) and the total specific on-resistance (Ron-sp) is dominated by the channel resistance. The temperature dependence of R on-sp was shown to be a function of the applied gate voltage. Two separate scattering mechanisms are responsible for the difference in the temperature response of Ron-sp that occurs at low and high gate voltages. The threshold voltage (VT) of these devices has strong temperature dependence which can limit the blocking performance. Subthreshold leakage current through the MOS channel increases with increasing temperature due to the shift in VT. This results in a higher drain leakage current during the off-state as the device temperature is raised. Device reliability may be impacted if VT is not set high enough to preclude subthreshold leakage current during off-state operation. It has been demonstrated that application of a negative gate bias can suppress this leakage current and enhance off-state performance. Switching performance of 4H-SiC MOSFET devices was characterized as a function of temperature in a double-pulse clamped inductive load test circuit. The total switching energy loss was found to decrease with increasing temperature due to the shift in VT. Modified High Temperature Gate Bias (MHTGB) and High Temperature Reverse Bias (HTRB) measurements on SiC MOSFET devices have achieved stress times of 100 and 50 hours respectively, with no failures. This work provides a first look at the long-term reliability of these devices. -- Abstract.

Download or read book Design and Fabrication of 4H Silicon Carbide MOSFETS written by Jian Wu and published by . This book was released on 2009 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulties in the development of 4H-SiC power MOSFET have been low MOS channel mobility and gate oxide reliability. In this dissertation, a novel 4H-SiC power MOSFET structure has been presented with the aim of solving these problems. The research started from the study and improvement of the channel mobility of lateral trench-gate MOSFET that features an accumulation channel for high channel mobility. The design, fabrication and characterization of lateral trench-gate MOSFET are presented. The fabricated lateral trench-gate MOSFET with an accumulation channel of 0.15 [micrometers] exhibited a high peak channel mobility of 95 cm2/Vs at room temperature and 255 cm2/Vs at 200oC with stable normally-off operation. Based on the successful demonstration of high channel mobility, a vertical trench-gate power MOSFET structure has been designed and developed. This structure also features an epitaxial N-type accumulation channel to take advantage of high channel mobility. Moreover, this structure introduces a submicron N-type vertical channel by counter-doping the P base region via a low-dose nitrogen ion implantation. The implanted vertical channel provides effective shielding for gate oxide from high electric field. A process using the oxidation of polysilicon was developed to achieve self-alignment between the submicron vertical channel and the gate trench. A "sandwich" process, including nitric oxide growth, dry oxygen growth and nitric oxide annealing, was incorporated to grow high-quality gate oxide. The fabricated single-gate vertical MOSFET can block up to 890 V at zero gate bias. The device exhibited a low specific on-resistance of 9.3 m[omega]cm2 at VGS=70 V, resulting in an improved FOM () of 85 MW/cm2. A large-area MOSFET with an active area of 4.26x10-2 cm2 can block up to 810V with a low leakage current of 21 [micro]A and conducted a high on-current of 1 A at VDS=3 V and VGS=50 V. The fabricated devices all exhibited the stable normally-off operation with threshold voltages of 5~6 V. Their subthreshold characteristics with high on/off ratios of 3~5 indicates that the MOSFETs are capable of operating stably as switching devices.

Download or read book Design and Application of SiC Power MOSFET written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional(2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to good agreement with the experimental transfer characteristic. The results demonstrate that both MEDICI and SPICE simulators can be used for design and optimization of 4H SiC MOSFETs and the circuits utilizing these MOSFETs. Based on critical review of SiC power MOSFETs, a new structure of SiC accumulation-mode MOSFET(ACCUFET) designed to address most of the open issues related to MOS interface is proposed. Detailed analysis of the important design parameters of the novel structure is performed using MEDICI with the parameter set used in the calibration process. The novel structure was also compared to alternative ACCUFET approaches, specifically planar and trench-gate ACCUFETs. The comparison shows that the novel structure provides the highest figure of merit for power devices. The analysis of circuit advantages enabled by the novel SiC ACCUFET is given in the final part of this thesis. The results from circuit simulation show that by utilizing the novel SiC ACCUFET the operating frequency of the circuit can be increased 10 times for the same power efficiency of the system. This leads to dramatic improvements in size, weight, cost and thermal management of power electronic systems.

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Development of 4H SiC Power MOSFETs for High Voltage Applications written by Hua Rong and published by . This book was released on 2015 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2004-06-09 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

Download or read book Advances in Microelectronics Reviews Vol 2 written by Sergey Yurish and published by Lulu.com. This book was released on 2019-08-06 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2nd volume of 'Advances in Microelectronics: Reviews' Book Series is written by 57 contributors from academy and industry from 11 countries (Bulgaria, Hungary, Iran, Japan, Malaysia, Romania, Russia, Slovak Republic, Spain, Ukraine and USA). The book contains 13 chapters from different areas of microelectronics: MEMS, materials characterization, and various microelectronic devices. With unique combination of information in each volume, the Book Series will be of value for scientists and engineers in industry and at universities. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.

Download or read book Two Dimensional Nanostructures for Energy Related Applications written by Kuan Yew Cheong and published by CRC Press. This book was released on 2017-03-27 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edited book focuses on the latest advances and development of utilizing two-dimensional nanostructures for energy and its related applications. Traditionally, the geometry of this material refers to "thin film" or "coating." The book covers three main parts, beginning with synthesis, processing, and property of two-dimensional nanostructures for active and passive layers followed by topics on characterization of the materials. It concludes with topics relating to utilization of the materials for usage in devises for energy and its related applications.

Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Download or read book Modeling and Characterization of 4H SIC MOSFETs written by Siddharth Potbhare and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Download or read book 4H silicon Carbide MOSFET Interface Structure Defect States and Inversion Layer Mobility written by Gang Liu and published by . This book was released on 2014 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this dissertation is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effect of reactive ion etching on the a-face, an important aspect of processing optimum power devices. We correlate electrical measurements, i.e. current-voltage (I-V) and capacitance-voltage (C-V) with physical characterization including X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS). A significant phosphorus induced inversion layer mobility enhancement of ~125 cm2/V-s is achieved, and the revisited effect of NO on the a-face of 4H-SiC yields an impressive mobility of ~85 cm2/V-s. These results indicate that N and P improves the interface both by passivation and by interfacial counter doping, with the latter mechanism more effective on the a-face than the Si-face. Interface trap density (Nit) and the mobility-temperature dependence both indicate coulomb scattering is no longer the limiting factor for the N and P annealed a-face inversion layer mobility. The second major part of this dissertation reports the use of hydrogen annealing to implement the successful recovery of the a-face (11-20) crystal structure and the inversion layer mobility following degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.