Download or read book Characteristics and Hot Carrier Reliability in 40V N type LDMOS Transistors written by 郭育禎 and published by . This book was released on 2009 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characteristics and Hot Carrier Reliability of N channel Lateral Diffused Metal Oxide Semiconductor LDMOS Transistors with Different NDD Dosage written by 田昆玄 and published by . This book was released on 2006 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mechanism of Hot Carrier Reliability in High Voltage P type LDMOS Transistors written by 嚴進嶸 and published by . This book was released on 2007 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Reliability of 12V High Voltage N LDMOS Transistors written by 陳翔裕 and published by . This book was released on 2006 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effect of Device Dimension on Hot Carrier Reliability of N type LDMOS Transistors written by 王瑋傑 and published by . This book was released on 2007 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Reliability in 12V High Voltage P LDMOS Transistors written by 吳泰慶 and published by . This book was released on 2009 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characteristics and Hot Carrier Reliability of N type MOS Transistor with Difference Channel Width written by 陳建佑 and published by . This book was released on 2010 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Effect on LDMOS Transistors written by Liangjun Jiang and published by . This book was released on 2007 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.
Download or read book Hot Carrier Design Considerations for MOS Devices and Circuits written by Cheng Wang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book Failure Analysis of Hot Electron Effect on Power Rf N Ldmos Transistor written by Mohamed Ali Bela D and published by LAP Lambert Academic Publishing. This book was released on 2012-07 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current problems in electronics for manufacturers or users are to determine the lifetime and estimate the reliability of device or system. As well improve their performance and quality. This book presents a synthesis of Hot-Electron effects on power RF LDMOS performances, after accelerated ageing tests. This can modify and degrade transistor physical and electrical behaviour. The temperature can limit the lifetime of semiconductors and plays an essential part in the degradation mechanisms. An electric characterization (IC-CAP) has been made, and a thermoelectric model ADS has been implemented. This is used as the reliability tool (parameters extraction) in order to quantify the parameter shift. We have pointed out the relation between the ageing tests and the hot carrier degradation in RF LDMOS, and its effect on the electric performances. To understanding of the degradation physical phenomena brought into play in the structure, we used a physical simulation 2-D (Atlas) to con rm these phenomena. Finally, the work demonstrates that the degradation mechanism of power RF LDMOS is the hot carrier injection phenomenon in the already existing oxide traps and/or in the Si/SiO2 interface."
Download or read book Effects of Device Dimension on Characteristics and Reliability of N LDMOS Transistors written by 馮雅聖 and published by . This book was released on 2013 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies on Hot Carrier Effects in 12V P LDMOS Transistors written by 黃忠彬 and published by . This book was released on 2010 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Effects on Total Dose Irradiated 65 Nm N Type Metal Oxide Semiconductor Field Effect Transistors Supported by the National Natural Science Foundation of China Under Grant Nos 11475255 U1532261 and 11505282 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
Download or read book Effects of Gradual Junction Device Size on Characteristics and Hot Carrier Reliability of High Voltage MOSFET written by and published by . This book was released on 2021 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ESD in Silicon Integrated Circuits written by E. Ajith Amerasekera and published by John Wiley & Sons. This book was released on 2002-05-22 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: * Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.
Download or read book POWER HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
