Download or read book Carrier Transport in Quantum Well Structures written by Jeremy Richards Watling and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Time Resolved Studies of In Well and Cross Well Carrier Transport in MQW Semiconductor Structures written by and published by . This book was released on 1992 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this research project was to establish a better understanding of in-well and cross-well carrier transport in multiple quantum well (MQW) semiconductors. Carrier emission from both multiple and single quantum well devices have been studied in detail in p-i-n doped MQW SEED-type modulator structures and in waveguides. Simultaneous measurements of electron and hole emission rates has been accomplished for the first time leading to important conclusions concerning thermionic emission models for quantum wells. Extensive modeling of the dynamical optical response relating to cross-well carrier transport has been carried out. Spin relaxation has also been used successfully to monitor carrier dynamics in MQW devices. A new family of mode- locked lasers have been developed for time resolved measurements which are looking extremely attractive as ultrashort pulse sources for GaAs-based optoelectronic devices.
Download or read book Physics of Quantum Well Devices written by B.R. Nag and published by Springer Science & Business Media. This book was released on 2006-04-11 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.
Download or read book Quantum Well Lasers written by Peter S. Zory Jr. and published by Elsevier. This book was released on 2012-12-02 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment of quantum well laser basics* Covers strained quantum well lasers* Explores the different state-of-the-art quantum well laser types* Provides key information on future laser technologies
Download or read book Quantum Wells Wires and Dots written by Paul Harrison and published by John Wiley & Sons. This book was released on 2016-04-29 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: Properties of non-parabolic energy bands Matrix solutions of the Poisson and Schrödinger equations Critical thickness of strained materials Carrier scattering by interface roughness, alloy disorder and impurities Density matrix transport modelling Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is presented in a lucid style with easy to follow steps, illustrative examples and questions and computational problems in each chapter to help the reader build solid foundations of understanding to a level where they can initiate their own theoretical investigations. Suitable for postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide. Instructors can contact the authors directly ([email protected] / [email protected]) for Solutions to the problems.
Download or read book Transport of Information Carriers in Semiconductors and Nanodevices written by El-Saba, Muhammad and published by IGI Global. This book was released on 2017-03-31 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.
Download or read book Quantum Transport in Semiconductors written by David K. Ferry and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.
Download or read book Semiconductor Lasers I written by Eli Kapon and published by Academic Press. This book was released on 1999-01-12 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers, and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum dot lasers. The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features. - Introduces the reader to the basics of semiconductor lasers - Covers the fundamentals of lasing in semiconductors, including quantum confined and microcavity structures - Beneficial to readers interested in the more general aspects of semiconductor physics and optoelectronic devices, such as quantum confined heterostructures and integrated optics - Each chapter contains a thorough introduction to the topic geared toward the non-expert, followed by an in-depth discussion of current technology and future trends - Useful for professionals engaged in research and development - Contains numerous schematic and data-containing illustrations
Download or read book The Physics of Low dimensional Structures written by Georgios P. Triberis and published by . This book was released on 2007 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the field of low dimensional structures, starting from the selectively doped double heterostructures n-A1GaAs/GaAs/n-A1GaAs, and (strained) p-Si/SiGe/p-Si (quantum wells). The behaviour of the sheet electron density, the subband populations and energies as a function of the well width, the spacer thickness and the doping concentration is analysed. The temperature dependence of the bulk electron concentration versus the quasi-2DEG are discussed. In the framework of Boltzmann's transport theory a detailed study of the mobility is presented at low and high temperatures taking into account all the relevant scattering mechanisms. The pseudomorphic Si/SiGe undoped quantum wells are a perfect example for the study of the non-parabolicity of the hole-bands. For the first time in a book an exact solution of the multiband effective mass equation that describes the heavy, light and split-off hole valence bands is introduced, and interband transitions and selection rules are obtained. Reducing dimensionality new aspects concerning optical and transport properties of quantum wires (QWRS) is discussed. Specifically, the photoluminescence and the microphotoluminescence spectra of V-shaped QWRS is theoretically interpreted leading to a realistic cartography of the interface roughness of these systems. A computational approach for the solution of the eigenvalue problem in low-dimensional systems of complex but realistic geometry is also presented for the first time in a book, and transport theoretical considerations will lead to a systematic study of the mobility. As DNA could be considered as a one-dimensional "molecular wire" the study of carrier transport along DNA is discussed in terms of hopping transport. A computational scheme is presented which allows the study of near-field magnetoabsorpsion spectra of Quantum Dots (QD) of any given geometry, under magnetic field of any orientation. The effect of the spatial confinement imposed by the QD dimensions and the magnetic confinement governed by the magnetic field are explored. The influence of the Coulomb interactions between electrons and holes is also discussed. The applicability of the method in actual experiments, i.e. the illumination of a nanostructure with a near-field probe in conjunction with the simultaneous application of an external magnetic field, may become a challenge to experimentalists. Finally, magnetothermoelectic transport in the fractional quantum Hall effect (FQHE) regime is discussed. The theoretical framework for the calculation of the resistivity, the thermopower and the thermal conductivity for two-dimensional electron and hole gases, at low temperatures and strong perpendicular magnetic fields is outlined. The composite fermion picture enables the use of the integer quantum Hall effect and Shubnikov - de Haas conductivity models for a quantitative comparison with experiment. A study on the validity of fundamental physical laws such as the Wiedemann-Franz law in two-dimensional structures is also presented.
Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Download or read book Fundamentals of Carrier Transport written by Mark Lundstrom and published by Cambridge University Press. This book was released on 2009-07-02 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Carrier Transport explores the behavior of charged carriers in semiconductors and semiconductor devices for readers without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices and coverage of "full band" transport. Lundstrom also covers both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. He explains in detail the use of Monte Carlo simulation methods and provides many homework exercises along with a variety of worked examples. What makes this book unique is its broad theoretical treatment of transport for advanced students and researchers engaged in experimental semiconductor device research and development.
Download or read book Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures written by Jagdeep Shah and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Switching in Low Dimensional Systems written by Hartmut Haug and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains all the papers presented at the NATO workshop on "Optical Switching in Low Dimensional Systems" held in Marbella, Spain from October 6th to 8th, 1988. Optical switching is a basic function for optical data processing, which is of technological interest because of its potential parallelism and its potential speed. Semiconductors which exhibit resonance enhanced optical nonlinearities in the frequency range close to the band edge are the most intensively studied materials for optical bistability and fast gate operation. Modern crystal growth techniques, particularly molecular beam epitaxy, allow the manufacture of semiconductor microstructures such as quantum wells, quantum wires and quantum dots in which the electrons are only free to move in two, one or zero dimensions, of the optically excited electron-hole pairs in these low respectively. The spatial confinement dimensional structures gives rise to an enhancement of the excitonic nonlinearities. Furthermore, the variations of the microstruture extensions, of the compositions, and of the doping offer great new flexibility in engineering the desired optical properties. Recently, organic chain molecules (such as polydiacetilene) which are different realizations of one dimensional electronic systems, have been shown also to have interesting optical nonlinearities. Both the development and study of optical and electro-optical devices, as well as experimental and theoretical investigations of the underlying optical nonlinearities, are contained in this book.
Download or read book Semiconductor Interfaces And Microstructures written by Zhe Chuan Feng and published by World Scientific. This book was released on 1992-08-31 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields.
Download or read book Hot Electron Transport and Relaxation in Quantum Wells and Superlattices written by Jenifer Edith Lary and published by . This book was released on 1991 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron transport and relaxation may be substantially different in low-dimensional systems compared to that observed in bulk material. In the present work, Monte Carlo models are used for the solution to the Boltzmann transport equation, with scattering rates calculated quantum mechanically for superlattice and quantum wells. Carrier relaxation following optical excitation is examined in multiple quantum well systems. Simulated results of the carrier relaxation process in coupled asymmetric wells and modulation doped wells are in good agreement with published experimental results on similar structures. Scattering rates in superlattices due to polar optical phonons, intervalley phonons, ionized impurities and carrier-carrier scattering are derived. Carrier transport through high energy superlattice minibands is examined in superlattice base hot electron transistors. Additionally, transport in the ballistic limit in periodic quantum wire structures, including geometric superlattices, is examined utilizing a mode matching method.
Download or read book Issues in General Physics Research 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 13957 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in General Physics Research / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about General Physics Research. The editors have built Issues in General Physics Research: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about General Physics Research in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in General Physics Research: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Resonant Tunneling in Semiconductors written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
