Download or read book Caract risation et mod lisation de la fiabilit des transistors MOS en Radio Fr quence written by Laurent Negre and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les produits issus des technologies Silicium tendent à exploiter au maximum les performancesdes transistors MOS tout en les soumettant à des profils de mission très agressifs du point de vuede la fiabilité. Les concepteurs sont ainsi à la recherche du meilleur compromis entre performanceet fiabilité.Historiquement, l'étude de la fiabilité du transistor MOS et le développement des modèlessous jacents ont été menés sur la base de contrainte de vieillissement statique. Avec le développementdes produits à hautes performances dans le domaine de la radiofréquence (RF), laquestion de la fiabilité pour ce type d'application se pose. Ainsi, une extension des modèles defiabilité doit être réalisée afin de quantifier le vieillissement des paramètres clés RF soumis àdes contraintes statiques mais également RF. C'est cette extension de la fiabilité des transistorsMOS dans le domaine RF qui constitue le sujet de ce travail de thèse.Dans ce manuscrit, le fonctionnement du transistor MOS est décrit et sa fiabilité est introduite.Les différents mécanismes de dégradation sont étudiés et leurs modèles associés décrits.Sont ensuite présentés un banc de mesure et une méthodologie nécessaire à l'étude du vieillissementdes transistors dans le domaine RF, ainsi qu'à l'extension des modèles de fiabilité audomaine RF.
Download or read book Caract risation et mod lisation de la fiabilit des transistors et circuits millim triques con us en technologies BiCMOS et CMOS written by Salim Ighilahriz and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: De nos jours, l'industrie de la microélectronique développe des nouvelles technologies qui permettent l'obtention d'applications du quotidien alliant rapidité, basse consommation et hautes performances. Pour cela, le transistor, composant actif élémentaire et indispensable de l'électronique, voit ses dimensions miniaturisées à un rythme effréné suivant la loi de Moore de 1965. Cette réduction de dimensions permet l'implémentation de plusieurs milliards de transistors sur des surfaces de quelques millimètres carrés augmentant ainsi la densité d'intégration. Ceci conduit à une production à des coûts de fabrication constants et offre des possibilités d'achats de produits performants à un grand nombre de consommateurs. Le MOSFET (Metal Oxide Semiconductor Field Effect Transistor), transistor à effet de champ, aussi appelé MOS, représente le transistor le plus utilisé dans les différents circuits issus des industries de la microélectronique. Ce transistor possède des longueurs électriques de 14 nm pour les technologies industrialisables les plus avancées et permet une densité intégration maximale spécialement pour les circuits numériques tels que les microprocesseurs. Le transistor bipolaire, dédié aux applications analogiques, fut inventé avant le transistor MOS. Cependant, son développement correspond à des noeuds technologiques de génération inférieure par rapport à celle des transistors MOS. En effet, les dimensions caractéristiques des noeuds technologiques les plus avancés pour les technologies BiCMOS sont de 55 nm. Ce type de transistor permet la mise en oeuvre de circuits nécessitant de très hautes fréquences d'opération, principalement dans le secteur des télécommunications, tels que les radars anticollisions automobiles fonctionnant à 77 GHz. Chacun de ces types de transistors possède ses propres avantages et inconvénients. Les avantages du transistor MOS reposent principalement en deux points qui sont sa capacité d'intégration et sa faible consommation lorsqu'il est utilisé pour réaliser des circuits logiques. Sachant que ces deux types de transistors sont, de nos jours, comparables du point de vue miniaturisation, les avantages offerts par le transistor bipolaire diffèrent de ceux du transistor MOS. En effet, le transistor bipolaire supporte des niveaux de courants plus élevés que celui d'un transistor MOS ce qui lui confère une meilleure capacité d'amplification de puissance. De plus, le transistor bipolaire possède une meilleure tenue en tension et surtout possède des niveaux de bruit électronique beaucoup plus faibles que ceux des transistors MOS. Ces différences notables entre les deux types de transistors guideront le choix des concepteurs suivant les spécifications des clients. L'étude qui suit concerne la fiabilité de ces deux types de transistors ainsi que celle de circuits pour les applications radio fréquences (RF) et aux longueurs d'ondes millimétriques (mmW) pour lesquels ils sont destinés. Il existe dans la littérature de nombreuses études de la fiabilité des transistors MOS. Concernant les transistors bipolaires peu d'études ont été réalisées. De plus peu d'études ont été menées sur l'impact de la fiabilité des transistors sur les circuits. L'objectif de ce travail est d'étudier le comportement de ces deux types de transistors mais aussi de les replacer dans le contexte de l'utilisateur en étudiant la fiabilité de quelques circuits parmi les plus usités dans les domaines hyperfréquence et millimétrique. Nous avons aussi essayé de montrer qu'il était possible de faire évoluer les règles de conception actuellement utilisées par les concepteurs tout en maintenant la fiabilité attendue par les clients.
Download or read book Mod lisation num rique et caract risation en bruit basse fr quence de transistor MOS avanc s written by Jimmy Armand and published by . This book was released on 2008 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ce travail de thèse porte sur la modélisation numérique des transistors MOS avancés en vue d'élaborer des outils de caractérisation en bruit basse fréquence (BF) prenant en compte les effets liés à la miniaturisation. Dans le premier chapitre, un rappel du principe de fonctionnement du transistor MOS est présenté, ainsi que les problèmes rencontrés actuellement dans les dispositifs ultimes. Le deuxième chapitre se focalise plus précisément sur la physique des semiconducteurs en vue de la simulation numérique des effets liés à la miniaturisation. Le troisième chapitre porte sur les différentes origines du bruit en 1/f dans les MOSFETs ainsi que la modélisation en bruit BF des courants du drain et de la grille. Un modèle numérique de bruit BF se basant sur les fonctions de Green et adapté aux oxydes ultrafins a été développé. Le dernier chapitre est consacré à la caractérisation. Des mesures de bruit BF, après stress par porteurs chauds et par injection Fowler Nordheim, sont analysées à partir des modèles développés. Nous avons également menée une étude portant sur l'impact de la nitruration de l'oxyde. Les résultats obtenus ont montré une forte correspondance entre le profil de défauts lents extraits à partir des mesures BF et celui des atomes d'azotes présents dans l'oxyde.
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Download or read book Quantum Communications and Cryptography written by Alexander V. Sergienko and published by CRC Press. This book was released on 2018-10-03 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: All current methods of secure communication such as public-key cryptography can eventually be broken by faster computing. At the interface of physics and computer science lies a powerful solution for secure communications: quantum cryptography. Because eavesdropping changes the physical nature of the information, users in a quantum exchange can easily detect eavesdroppers. This allows for totally secure random key distribution, a central requirement for use of the one-time pad. Since the one-time pad is theoretically proven to be undecipherable, quantum cryptography is the key to perfect secrecy. Quantum Communications and Cryptography is the first comprehensive review of the past, present, and potential developments in this dynamic field. Leading expert contributors from around the world discuss the scientific foundations, experimental and theoretical developments, and cutting-edge technical and engineering advances in quantum communications and cryptography. The book describes the engineering principles and practical implementations in a real-world metropolitan network as well as physical principles and experimental results of such technologies as entanglement swapping and quantum teleportation. It also offers the first detailed treatment of quantum information processing with continuous variables. Technologies include both free-space and fiber-based communications systems along with the necessary protocols and information processing approaches. Bridging the gap between physics and engineering, Quantum Communications and Cryptography supplies a springboard for further developments and breakthroughs in this rapidly growing area.
Download or read book Industry Standard FDSOI Compact Model BSIM IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-22 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
Download or read book Interlayer Dielectrics for Semiconductor Technologies written by Shyam P Muraka and published by Elsevier. This book was released on 2003-10-13 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.
Download or read book Flexoelectricity in Liquid Crystals written by Agnes Buka and published by World Scientific. This book was released on 2013 with total page 299 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book intends to give a state-of-the-art overview of flexoelectricity, a linear physical coupling between mechanical (orientational) deformations and electric polarization, which is specific to systems with orientational order, such as liquid crystals. Chapters written by experts in the field shed light on theoretical as well as experimental aspects of research carried out since the discovery of flexoelectricity. Besides a common macroscopic (continuum) description the microscopic theory of flexoelectricity is also addressed. Electro-optic effects due to or modified by flexoelectricity as well as various (direct and indirect) measurement methods are discussed. Special emphasis is given to the role of flexoelectricity in pattern-forming instabilities. While the main focus of the book lies in flexoelectricity in nematic liquid crystals, peculiarities of other mesophases (bent-core systems, cholesterics, and smectics) are also reviewed. Flexoelectricity has relevance to biological (living) systems and can also offer possibilities for technical applications. The basics of these two interdisciplinary fields are also summarized.
Download or read book Modern Surface Organometallic Chemistry written by Jean-Marie Basset and published by John Wiley & Sons. This book was released on 2009-07-10 with total page 725 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering everything from the basics to recent applications, this monograph represents an advanced overview of the field. Edited by internationally acclaimed experts respected throughout the community, the book is clearly divided into sections on fundamental and applied surface organometallic chemistry. Backed by numerous examples from the recent literature, this is a key reference for all chemists.
Download or read book MOSFET Modeling BSIM3 User s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Download or read book ZnO Thin Films written by Paolo Mele and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.
Download or read book Proof Theory and Automated Deduction written by Jean Goubault-Larrecq and published by Springer Science & Business Media. This book was released on 2001-11-30 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in computer applications has led to a new attitude to applied logic in which researchers tailor a logic in the same way they define a computer language. In response to this attitude, this text for undergraduate and graduate students discusses major algorithmic methodologies, and tableaux and resolution methods. The authors focus on first-order logic, the use of proof theory, and the computer application of automated searches for proofs of mathematical propositions. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book Governance Regulation and Powers on the Internet written by Eric Brousseau and published by Cambridge University Press. This book was released on 2012-04-23 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: An interdisciplinary survey of the issues surrounding the governance of the Internet.
Download or read book Green Networking written by Francine Krief and published by John Wiley & Sons. This book was released on 2012-12-13 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on green networking, which is an important topic for the scientific community composed of engineers, academics, researchers and industrialists working in the networking field. Reducing the environmental impact of the communications infrastructure has become essential with the ever increasing cost of energy and the need for reducing global CO2 emissions to protect our environment. Recent advances and future directions in green networking are presented in this book, including energy efficient networks (wired networks, wireless networks, mobile networks), adaptive networks (cognitive radio networks, green autonomic networking), green terminals, and industrial research into green networking (smart city, etc.).
Download or read book Frequency Standards written by Fritz Riehle and published by John Wiley & Sons. This book was released on 2006-03-06 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: Of all measurement units, frequency is the one that may be determined with the highest degree of accuracy. It equally allows precise measurements of other physical and technical quantities, whenever they can be measured in terms of frequency. This volume covers the central methods and techniques relevant for frequency standards developed in physics, electronics, quantum electronics, and statistics. After a review of the basic principles, the book looks at the realisation of commonly used components. It then continues with the description and characterisation of important frequency standards from atomic clocks, to frequency stabilised lasers. The whole is rounded of with a discussion of topical applications in engineering, telecommunications, and metrology.
