Download or read book Design and Fabrication of High Voltage 4H SiC Schottky Barrier Diodes written by Luo, Xixi and published by . This book was released on 2019 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel design of mesa-etch termination and Superjunction JBS diode structure has been proposed and optimized. The new mesa-etch termination can achieve over 90% of ideal maximal breakdown voltage within a wide sidewall implant dose window (~9e16 cm−3). Besides the high tolerance on implant dose, the proposed design also exhibits high tolerance on the etch sidewall angle: minimal maximum breakdown voltage was observed with etch sidewall angle variations. The Superjunction JBS diode can obtain both 96.4% maximum super junction breakdown voltage and 76.6% JBS Schottky surface electric field reduction. The super junction maximal breakdown voltage is 1.5 times large as the conventional Schottky diode breakdown voltage and the leakage current is logarithmically related to the surface electric field. The superior breakdown voltage represents a large improvement on the power rectifier performance. Based on these structure improvements, vertical 4H-SiC Schottky Diodes have been fabricated and tested. Vertical 4H-SiC Schottky Diode without any edge termination has a breakdown voltage as large as 692 V and exhibits an on-state specific resistance as small as 7.9 mΩ*cm2. Such breakdown voltage is much higher than simulation results. In the meantime, on-state resistance is also much larger than the simulation results. The mechanism for these improved power rectifier performances will be furthered investigated in future studies

Download or read book Caract risation et mod lisation de diodes Schottky et JBS SiC 4H pour des applications haute tension written by Besar Asllani and published by . This book was released on 2019 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: La diode Schottky SiC est un composant qui peut potentiellement remplacer la diode PiN Si dans les applications de puissance. Effectivement, la tenue en tension élevée, la faible résistivité, ainsi que l'indépendance de la température du courant de recouvrement rendent cette diode idéale pour les convertis- seurs de puissance DC/DC. Cependant, face à l'abondance des composants Si sur le marché, la diode Schottky rencontre une certaine réticence. Malgré les nombreuses démonstrations de systèmes électroniques de puissance réalisés, la fiabilité de cette technologie n'arrive pas à convaincre. Cette étude porte sur la caractérisation en régime statique sur une large gamme de températures et l'évaluation de la fiabilité en surcharge des diodes Schottky et JBS SiC-4H. La caractérisation en température a permis de proposer des modèles de la carac- téristique directe et inverse sur une gamme étendue de températures. Les tests en surcharge ont permis de comparer la fiabilité de diodes expérimentales et commerciales à fin de montrer la maturité de cette technologie.

Download or read book Electrical Characterization of 4H and 6H silicon Carbide Schottky Diodes written by Jeffrey C. Wiemeri and published by . This book was released on 1995 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Simulation and Design of 4H SiC Schottky Diode and Si IGBT written by 黃浩宸 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Optimization of the Junction Termination Extension JTE Method for 4H SiC High Voltage Schottky Diodes written by Atul Mahajan and published by . This book was released on 2004 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Characterization of 4H and 6H silicon Carbide Schottky Diodes written by Jeffrey C. Wiemeri and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of A1 4H SiC Schottky Diodes written by Jingyan Zhang and published by . This book was released on 2002 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Fabrication and Characterisation of 4H SiC Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Fabrication and Characterisation of 4H silicon Carbide Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of 4H SiC PiN Diodes for High Voltage Applications written by Craig A. Fisher and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Integrated 4H Silicon Carbide Diodes and Bridge Circuits for Harsh Environment Applications written by Shiqian Shao and published by . This book was released on 2016 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Fabrication and Characterization of High Voltage 10 KV 4H SiC MPS Diodes written by Yifan Jiang and published by . This book was released on 2019 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: