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Book Breakdown Phenomena in Semiconductors and Semiconductor Devices

Download or read book Breakdown Phenomena in Semiconductors and Semiconductor Devices written by Michael Levinshtein and published by World Scientific. This book was released on 2005 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.

Book Special Issue  Breakdown Phenomena in Semiconductors and Semiconductor Devices

Download or read book Special Issue Breakdown Phenomena in Semiconductors and Semiconductor Devices written by M. E. Levinshtein and published by . This book was released on 2004 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Physical Limitations of Semiconductor Devices

Download or read book Physical Limitations of Semiconductor Devices written by Vladislav A. Vashchenko and published by Springer Science & Business Media. This book was released on 2008-03-22 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

Book Semiconductor Power Devices

Download or read book Semiconductor Power Devices written by Josef Lutz and published by Springer Science & Business Media. This book was released on 2011-01-15 with total page 539 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.

Book Tunnelling and Negative Resistance Phenomena in Semiconductors

Download or read book Tunnelling and Negative Resistance Phenomena in Semiconductors written by D. K. Roy and published by Elsevier. This book was released on 2014-05-09 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.

Book Physics of Semiconductor Devices

Download or read book Physics of Semiconductor Devices written by S. M. Sze and published by Wiley-Interscience. This book was released on 1981-09-30 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semicondutor physics; Bipolar devices; Unipolar devices; Special microwave devices; Photonic devices; International system of units; Unit prefixes; Greek alphabet; Physical constants; Lattice constants; Propeties of important semiconductors; Properties of Ge, Si, and GaAs at 300K; Properties of Si02 and Si3NA at 300K.

Book Physics of Semiconductor Devices

Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2006-12-13 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.

Book Semiconductor Devices Explained

Download or read book Semiconductor Devices Explained written by Ton J. Mouthaan and published by John Wiley & Sons. This book was released on 1999 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offers an innovative and accessible new approach to the teaching of the fundamentals of semiconductor components by exploiting simulation to explain the mechanisms behind current in semiconductor structures. Simulation is a popular tool used by engineers and scientists in device and process research and the accompanying two dimensional process and device simulation software 'MicroTec', enables students to make their own devices and allows the recreation of real performance under varying parameters. There is also an accompanying ftp site containing ICECREAM software (Integrated Circuits and Electronics group Computerized Remedial Education And Mastering) which improves understanding of the physics involved and covers semiconductor physics, junction diodes, silicon bipolar and MOS transistors and photonic devices like LEDs and lasers. Features include: * MicroTec diskette containing a two-dimensional process and device simulator on which the many simulation exercises mentioned in the text can be performed thereby facilitating learning through experimentation * Computer aided education software (accessible vita ftp) featuring question and answer games, which enables students to enhance their understanding of the physics involved and allows lecturers to set assignments * Broad coverage spanning the common devices: pn junctions, metal semiconductor junctions, photocells, lasers, bipolar transistors, and MOS transistors * Discussion of fundamental concepts and technological principles offering the student a valuable grounding in semiconductor physics * Examination of the implications of recent research on small dimensions, reliability problems and breakdown mechanisms. Semiconductor Devices Explained offers a comprehensive new approach to teaching the fundamentals of semiconductor components based on the use of the accompanying process and device simulation software. Simulation is a popular tool used by engineers and scientists in device and process research. It supports the understanding of basic phenomena by linking the theory to hands on applications and real world problems with semiconductor devices. Throughout the text students are encouraged to augment their understanding by undertaking simulations and creating their own devices. The ICECREAM programme (Integrated Circuits and Electronics group Computerized Remedial Education And Mastering) question and answer game leads students through the concepts of common devices and makes learning fun. There is also a self-test element in which a data bank generates questions on the fundamentals of semiconductor junctions enabling students to assess their progress. Larger projects suitable for use as examination assignments are also incorporated. The test package is freely available to lecturers from the author on request. The remedial component of ICECREAM is available from the Wiley ftp site. MicroTec comes on a disk in the back of the book.

Book ESD

    ESD

    Book Details:
  • Author : Steven H. Voldman
  • Publisher : John Wiley & Sons
  • Release : 2005-12-13
  • ISBN : 0470012900
  • Pages : 420 pages

Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2005-12-13 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Book Second Breakdown in Semiconductor Devices

Download or read book Second Breakdown in Semiconductor Devices written by Harry A. Schafft and published by . This book was released on 1967 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Breakdown Phenomena in Semiconductor P n Junction Devices

Download or read book Breakdown Phenomena in Semiconductor P n Junction Devices written by Philip MARS and published by . This book was released on 1970 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Physics and Technology of Semiconductor Devices

Download or read book Physics and Technology of Semiconductor Devices written by Andrew S. Grove and published by John Wiley & Sons. This book was released on 1967-01-15 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides a comprehensive treatment of semiconductor device physics and technology, with emphasis on modern planar silicon devices. Physical principles are explained by the use of simple physical models and illustrated by experimental measurements.

Book Semiconductor Devices  Semiconductors and semiconductor diodes

Download or read book Semiconductor Devices Semiconductors and semiconductor diodes written by Maximilian Julius Otto Strutt and published by . This book was released on 1966 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Advanced Semiconductor Devices

Download or read book Advanced Semiconductor Devices written by Michael S. Shur and published by World Scientific. This book was released on 2007 with total page 205 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many firsts and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and hot off the press results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.

Book Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices    December 14   18  1999   New Delhi   2 2000

Download or read book Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices December 14 18 1999 New Delhi 2 2000 written by and published by Allied Publishers. This book was released on 2000 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book A Survey of Second Breakdown Phenomena  Mechanisms  and Damage in Semiconductor Junction Devices

Download or read book A Survey of Second Breakdown Phenomena Mechanisms and Damage in Semiconductor Junction Devices written by Paul P. Budenstein and published by . This book was released on 1970 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report describes the phenomena associated with second breakdown. To explain these, a variety of thermal and electrical theories have been offered. None of these have earned general acceptance, although each can explain certain aspects of second breakdown. The theoretical basis of the second breakdown problem is discussed and representative theoretical treatments are presented. A new model of second breakdown, based on tunnel emission in an avalanching junction, is offered. The details of this model, however, remain to be worked out. The motivation for this work is to arrive at some conclusions on how to predict the second breakdown behavior of transistors in terms of geometry and circuital environment and, if possible, to suggest ways of improving transistor device and circuit design for better second breakdown resistance. (Author).

Book Physical Principles of Semiconductor Devices

Download or read book Physical Principles of Semiconductor Devices written by Harry E. Talley and published by Wiley-Blackwell. This book was released on 1976 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: