Download or read book Breakdown Phenomena In Semiconductors And Semiconductor Devices written by Michael E Levinshtein and published by World Scientific. This book was released on 2005-09-07 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Download or read book Breakdown Phenomena in Semiconductor P n Junction Devices written by Philip MARS and published by . This book was released on 1970 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Breakdown Phenomena in Semiconductors and Semiconductor Devices written by Michael Levinshtein and published by World Scientific. This book was released on 2005 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Download or read book Physical Limitations of Semiconductor Devices written by Vladislav A. Vashchenko and published by Springer Science & Business Media. This book was released on 2008-03-22 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
Download or read book A Survey of Second Breakdown Phenomena Mechanisms and Damage in Semiconductor Junction Devices written by Paul P. Budenstein and published by . This book was released on 1970 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report describes the phenomena associated with second breakdown. To explain these, a variety of thermal and electrical theories have been offered. None of these have earned general acceptance, although each can explain certain aspects of second breakdown. The theoretical basis of the second breakdown problem is discussed and representative theoretical treatments are presented. A new model of second breakdown, based on tunnel emission in an avalanching junction, is offered. The details of this model, however, remain to be worked out. The motivation for this work is to arrive at some conclusions on how to predict the second breakdown behavior of transistors in terms of geometry and circuital environment and, if possible, to suggest ways of improving transistor device and circuit design for better second breakdown resistance. (Author).
Download or read book Tunnelling and Negative Resistance Phenomena in Semiconductors written by D. K. Roy and published by Elsevier. This book was released on 2014-05-09 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.
Download or read book Semiconductor Power Devices written by Josef Lutz and published by Springer Science & Business Media. This book was released on 2011-01-15 with total page 539 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
Download or read book Special Issue Breakdown Phenomena in Semiconductors and Semiconductor Devices written by M. E. Levinshtein and published by . This book was released on 2004 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics of P n Junctions and Semiconductor Devices written by S. M. Ryvkin and published by Springer. This book was released on 1971 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Devices Semiconductors and semiconductor diodes written by Maximilian Julius Otto Strutt and published by . This book was released on 1966 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Second Breakdown in Semiconductor Devices written by Harry A. Schafft and published by . This book was released on 1967 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Review of the Physics and Response Models for Burnout of Semiconductor Devices written by W. J. Orvis and published by . This book was released on 1984 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physical mechanisms that cause semiconductor devices to fail from electrical overstress--particularly, EMP-induced electrical stress--are described in light of the current literature and the authors' own research. A major concern is the cause and effects of second breakdown phenomena in p-n junction devices. Models of failure thresholds are evaluated for their inherent errors and for their ability to represent the relevant physics. Finally, the response models that relate electromagnetic stress parameters to appropriate failure-threshold parameters are discussed. (Author).
Download or read book Introduction to Semiconductor Phenomena and Devices written by Lloyd P. Hunter and published by . This book was released on 1966 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Theoretical Modeling of EMP Effects in Semiconductor Junction Devices written by J. H. Yee and published by . This book was released on 1983 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report discusses various damage mechanisms and their effects on the performance of semiconductor devices, and some of the important theoretical models which are used to describe second breakdown phenomena. The dominant mechanism responsible for the occurrence of second breakdown is probably the thermal excitation of electrons from a device's valence band (thermal mode second breakdown); conclusions from theoretical calculations based on three different approximations seem to support this model. Current mode breakdown, another form of second breakdown, is discussed in terms of the role it plays in determining the shape of the threshold failure power curve. The purpose of this investigation is, therefore, to assess the existing models and known mechanisms which can cause damage to a p-n junction device in an electromagnetic pulse environment.
Download or read book Power Semiconductors written by M. Kubat and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components.
Download or read book Semiconductor Junctions and Devices written by William Berryman Burford and published by . This book was released on 1965 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The PN Junction Diode written by Gerold W. Neudeck and published by Addison Wesley Publishing Company. This book was released on 1983 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text builds a foundation in PN junction theory from a conceptual and mathematical viewpoint. The second edition adds a large number of end-of-chapter problems, solved exercises, and a new chapter on metal-semiconductor contacts.
