Download or read book Boron Activation and Diffusion in Silicon for Varying Initial process Conditions During Flash assist Rapid Thermal Annealing written by Renata A. Camillo-Castillo and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: At such anneal temperatures the peak active boron concentration was independent of the amorphous layer re-crystallization temperature. The increase in active boron concentration subsequent to the re-crystallization process was also shown to be much larger than the reactivation of boron from the well researched boron interstitial cluster configuration. This fact strongly suggests the existence of boron in an alternative less stable configuration from which additional activation, subsequent to the re-crystallization process is possible.
Download or read book Boron Activation and Diffusion in Polycrystalline Silicon with Flash assist Rapid Thermal Annealing written by Sidan Jin and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The rigorous scaling in dimensions for future generations of transistor fabrication demands ever steeper requirements for dopant solubility with minimal diffusion. Advanced annealing techniques such as flash-assist rapid thermal processing now allow effective anneal times up to three orders of magnitude less than conventional methods. At the same time, advanced characterization techniques can now provide three-dimensional compositional analysis of materials systems. While there has been extensive research for flash annealing of B doped crystalline Si, the effects on polycrystalline Si have been less studied, but is of equal importance. It continues to be prevalent in device fabrication for current and future technologies. The morphology and evolution of grains in heavily B-doped poly-Si is studied under high temperature millisecond annealing conditions using plan-view transmission electron microscopy. High activation with low thermal budgets has allowed study of a very fine-grained microstructure of highly activated B doped poly-Si. 3D atom probe tomography allowed direct quantitative measurement of the segregation coefficient of B to the grain boundaries, and its diffusion behavior has been accurately modeled. Activation, mobility, and deactivation of B in flash annealed polycrystalline Si was also explored using Hall effect. By combining electrical, compositional and microstructural measurements, a model has been developed to describe the activation, mobility, and diffusion behavior of B in poly-Si films with average hole concentrations greater than 5\U+00d7\1019 cm−3.
Download or read book Athermal Photonic Effects on Boron Diffusion and Activation in Silicon During Microwave Rapid Thermal Annealing written by C. J. Bonifas and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Gate Stack Source Drain and Channel Engineering for Si Based CMOS 4 New Materials Processes and Equipment written by P. J. Timans and published by The Electrochemical Society. This book was released on 2008-05 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Download or read book Physics and modeling of boron diffusion activation and evolution of extended defects and point defects during rapid thermal annealing of ion implanted silicon written by Hiroyuki Kinoshita and published by . This book was released on 1993 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bibliographie sur l huile de Carthame written by and published by . This book was released on 1955 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Flash Lamp Annealing written by Lars Rebohle and published by . This book was released on 2019 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.
Download or read book Silicon Processing and Characterization with Ion Beams microform written by Mengbing Huang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1997 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous shrinkage of silicon devices is presenting challenges to ion beam processing and characterization of Si materials. In this thesis, we have studied some issues related to ion beam analysis and processing of silicon materials. First, we demonstrate the use of nuclear reaction analysis (NRA) combined with oxidation/etching to obtain the boron depth profile in a $\delta$-doped Si structure. Our measurements show very sharp interfaces between doped and undoped layers, with the attainable depth resolution of $\sim$0.7 nm. The technique is further applied to examine the B redistribution in the $\delta$-doped Si structure after solid phase epitaxial growth. Second, we study the effects of temperature and flux on the lattice damage induced by 1.0 MeV Si ion self-implantation. The decreasing rate of near-surface damage with implant temperature is distinctly different from that of end-of-range damage, suggesting that different mechanisms for damage formation are involved along the ion track. The flux effect on lattice damage is found to vary with temperature. Finally, we study boron transient enhanced diffusion (TED) under P and B isotope doping conditions. The effective boron diffusivity and the immobile boron density decrease with increasing P doping concentrations. This is consistent with the clustering model and suggests that the occurrence of TED for low boron concentration cannot be explained by the Fermi-level model. Compared to $\sp$B-free Si, $\sp$B TED in the $\sp$B-doped Si is retarded after the initial low-temperature annealing, while more broadening of the $\sp$B profile occurs in the $\sp$B-doped sample after a second annealing at high temperature. This phenomenon is discussed in terms of trapping of Si interstitials in $\sp$B doping background. This study also provides a means for testing the "+1" model which is important for TED modeling.
Download or read book Effect of Ramp Rate and Annealing Temperature on Boron Transient Diffusion in Implanted Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present results of recent kinetic Monte Carlo simulations of the effect of annealing time and ramp rate on boron transient enhanced diffusion (BTED) in low energy ion implanted silicon. The simulations use a database of defect and dopant energetics derived from first principle calculations. We discuss the complete atomistic details of defect and dopant clustering during the anneals, and the dependence of boron TED on ramp rate. The simulations provide a complete time history of the evolution of the active boron fraction during the anneal for a wide variety of conditions. We also studied the lateral spreading of the boron during the annealing for two different conditions, furnace anneal and ramp anneal.
Download or read book Analysis of the Redistribution of Boron in Silicon During a Thermal Oxidation Governed by a Linear parabolic Growth Law written by Lawrence Alan Hall and published by . This book was released on 1973 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Subsecond Annealing of Advanced Materials written by Wolfgang Skorupa and published by Springer. This book was released on 2013-12-19 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and modeling of dopant diffusion in ion implanted silicon during rapid thermal annealing of shallow junction written by Tzu-hsin Huang and published by . This book was released on 1994 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Boron Diffusion in Silicon Devices written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.
Download or read book Effects of High Temperature Treatment on Curl and Microstructure of Heavily Boron Doped Silicon written by Denise Marie Bruce and published by . This book was released on 1997-04-01 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: An experimental study was performed to investigate the effects of high temperature treatment on the microstructure and curling behavior of heavily boron-doped silicon structures. Cantilever structures were created from p++ boron diffused silicon wafers. The post-diffusion high temperature 'anneal' treatment temperature was varied while the anneal time remained constant. The micromechanical cantilevers were analyzed for curl as a function of the anneal temperature using an optical profiler. Bulk sections from the wafers were analyzed to obtain boron concentration using secondary ion mass spectroscopy (SIMS) and to obtain the distribution of lattice constant using x-ray diffraction. Microstructure of plan-view and cross section samples was investigated with the transmission electron microscope (TEM). Results of the curl measurements revealed that all non-annealed cantilever structures were curled in one direction, and those annealed for 90 minutes above 1100 deg C were all curled in the other direction, with an apparent transition temperature of about 1050 deg C. SIMS analysis confirmed that boron concentration becomes more uniform through the wafer thickness with increasing anneal temperature. X-ray diffraction revealed that the magnitude of the smallest lattice constant present in a wafer increases with increasing anneal temperature. TEM observations showed that dislocation and precipitate density do not change with anneal temperature.
Download or read book Advanced Methods for Defect Engineering in Silicon written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Annealing and Diffusion Characteristics of Boron Through oxide Implanted Silicon written by Der-Tsyr Fan and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
