Download or read book Bipolar Transistor Design and Process written by Jung-Kai Hong and published by . This book was released on 1982 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Download or read book Designing Bipolar Transistor Radio Frequency Integrated Circuits written by Allen A. Sweet and published by Artech House. This book was released on 2007-12-01 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: If you're looking for an in-depth and up-to-date understanding bipolar transistor RFIC design, this practical resource is a smart choice. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, offering you a detailed treatment of this increasingly important topic. You discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures… to in-depth coverage of fabrication technologies and amplifier design… to a look at performance tradeoffs and production costs, this book arms you with complete design know-how for your challenging work in the field.
Download or read book Device Design and Process Integration for SiGeC and Si SOI Bipolar Transistors written by Erik Haralson and published by . This book was released on 2004 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Precision Temperature Sensors in CMOS Technology written by Micheal A.P. Pertijs and published by Springer Science & Business Media. This book was released on 2006-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the analysis and design of precision temperature sensors in CMOS IC technology, focusing on so-called smart temperature sensors, which provide a digital output signal that can be readily interpreted by a computer. The text shows how temperature characteristics can be used to obtain an accurate digital temperature reading. The book ends with a detailed description of three prototypes, one of which achieves the best performance reported to date.
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Download or read book Analysis of Bipolar and CMOS Amplifiers written by Amir M. Sodagar and published by CRC Press. This book was released on 2018-10-08 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The classical approach to analog circuit analysis is a daunting prospect to many students, requiring tedious enumeration of contributing factors and lengthy calculations. Most textbooks apply this cumbersome approach to small-signal amplifiers, which becomes even more difficult as the number of components increases. Analysis of Bipolar and CMOS Amplifiers offers students an alternative that enables quick and intuitive analysis and design: the analysis-by-inspection method. This practical and student-friendly text demonstrates how to achieve approximate results that fall within an acceptable range of accuracy and are based on sound scientific principles. Working from the basics of amplifiers and transistors to biasing, single- and multistage amplifiers, current sources and mirrors, and analysis at midband, low, and high frequencies, the author demonstrates the interrelationship between behavior in both the time and frequency domains and balances the discussion between bipolar and CMOS circuits. Each chapter closes with a set of simulation examples in SPICE and MATLAB® that give students hands-on experience applying the concepts and methods using industry-standard tools. Building a practical working knowledge around a solid theoretical framework, Analysis of Bipolar and CMOS Amplifiers prepares your students to meet the challenges of quick and accurate approximations and software-based analysis awaiting them in the workplace.
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book Bipolar Transistors for Use in Monolithic Bandgap References and Temperature Transducers written by Koert van der Lingen and published by . This book was released on 1996 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zusammenfassung niederländisch.
Download or read book Modeling the Bipolar Transistor written by Ian E. Getreu and published by Elsevier Science & Technology. This book was released on 1978 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Model and Design of Bipolar and MOS Current Mode Logic written by Massimo Alioto and published by Springer Science & Business Media. This book was released on 2006-01-25 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current-Mode digital circuits have been extensively analyzed and used since the early days of digital ICs. In particular, bipolar Current-Mode digital circuits emerged as an approach to realize digital circuits with the highest speed. Together with its speed performance, CMOS Current-Mode logic has been rediscovered to allow logic gates implementations which, in contrast to classical VLSI CMOS digital circuits, have the feature of low noise level generation. Thus, CMOS Current-Mode gates can be efficiently used inside analog and mixed-signal ICs, which require a low noise silicon environment. For these reasons, until today, many works and results have been published which reinforce the importance of Current-Mode digital circuits. In the topic of Current-Mode digital circuits, the authors spent a lot of effort in the last six years, and their original results highly enhanced both the modeling and the related design methodologies. Since the fundamental Current-Mode logic building block is the classical differential amplifier, the winning idea, that represents the starting point of the authors’ research, was to change the classical point of view typically followed in the investigation and design of Current-Mode digital circuits. In particular, they properly exploited classical paradigms developed and used in the analog circuit domain (a topic in which one of the authors maturated a great experience).
Download or read book Parts Materials and Processes Experience Summary written by Lockheed Missiles and Space Company and published by . This book was released on 1973 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bipolar transistor and MOSFET device models written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2016-03-02 with total page 587 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.
Download or read book Design of Low Voltage Bipolar Operational Amplifiers written by M. Jeroen Fonderie and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 201 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design of Low-Voltage Bipolar Operational Amplifiers discusses the sub-circuits necessary to build a low-voltage operational amplifier. These include rail-to-rail input stages, rail-to-rail output stages, intermediate stages, protection circuitry and frequency compensation techniques. Of each of these, various implementations are examined. Furthermore, the book discusses realizations in silicon of the amplifiers. The design and implementation of low-voltage bipolar Operational Amplifiers (OpAmps) is fully presented. A low supply voltage is necessary because the tendency towards chip components of smaller dimensions lowers the breakdown voltage of these components. Further, a low supply voltage is favorable because it enables operation of the OpAmp from just one single battery cell. The bipolar technology is chosen, because it is more suited for operation at low-voltages than the MOS technology. The common-mode input voltage of the OpAmp must be able to have any value that fits within the supply voltage range. Input stages are discussed which are able to realize this at supply voltages down to 1.8 V, as well as down to 1 V. The output voltage of the OpAmp must be able to have any value within the supply voltage range. One of the 1 V output stages that is discussed, the multi-path driven output stage, also has a high bandwidth with a high gain. In addition to the input and output stage, the OpAmp comprises an intermediate stage, between the input stage and the output stage, to boost the overall gain of the OpAmp, and a class AB current control. A frequency compensation technique is used to split apart the pole frequencies in the transfer function. A disadvantage of this nested Miller compensation, is that the resulting bandwidth is reduced by a factor of two. A new method, multi-path-driven Miller compensation, which does not have this drawback, is therefore introduced. Several realizations are evaluated and a figure of merit is defined for the performance comparison of the OpAmps. One of the OpAmps operates at a 1 V supply, has a 3.4 MHz bandwidth with a 100 pF load and has a 700 &mgr;A supply current. The book is an excellent reference for professional designers of amplifiers and may be used as a text for advanced courses on the subject.
