Download or read book Bipolar transistor and MOSFET device models written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2016-03-02 with total page 587 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.
Download or read book Compact Transistor Modelling for Circuit Design written by Henk C. de Graaff and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
Download or read book Modeling and Design Techniques for RF Power Amplifiers written by Arvind Raghavan and published by John Wiley & Sons. This book was released on 2008-02-04 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Download or read book Systematic Analysis of Bipolar and MOS Transistors written by Uğur Çilingiroğlu and published by Artech House Materials Science. This book was released on 1993 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2010-07-19 with total page 1189 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. Power electronics has many applications in our every day life such as air-conditioners, electric cars, sub-way trains, motor drives, renewable energy sources and power supplies for computers. This book covers all aspects of switching devices, converter circuit topologies, control techniques, analytical methods and some examples of their applications. * 25% new content* Reorganized and revised into 8 sections comprising 43 chapters* Coverage of numerous applications, including uninterruptable power supplies and automotive electrical systems* New content in power generation and distribution, including solar power, fuel cells, wind turbines, and flexible transmission
Download or read book Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Download or read book High Performance Digital VLSI Circuit Design written by Richard X. Gu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-Performance Digital VLSI Circuit Design is the first book devoted entirely to the design of digital high-performance VLSI circuits. CMOS, BiCMOS and bipolar ciruits are covered in depth, including state-of-the-art circuit structures. Recent advances in both the computer and telecommunications industries demand high-performance VLSI digital circuits. Digital processing of signals demands high-speed circuit techniques for the GHz range. The design of such circuits represents a great challenge; one that is amplified when the power supply is scaled down to 3.3 V. Moreover, the requirements of low-power/high-performance circuits adds an extra dimension to the design of such circuits. High-Performance Digital VLSI Circuit Design is a self-contained text, introducing the subject of high-performance VLSI circuit design and explaining the speed/power tradeoffs. The first few chapters of the book discuss the necessary background material in the area of device design and device modeling, respectively. High-performance CMOS circuits are then covered, especially the new all-N-logic dynamic circuits. Propagation delay times of high-speed bipolar CML and ECL are developed analytically to give a thorough understanding of various interacting process, device and circuit parameters. High-current phenomena of bipolar devices are also addressed as these devices typically operate at maximum currents for limited device area. Different, new, high-performance BiCMOS circuits are presented and compared to their conventional counterparts. These new circuits find direct applications in the areas of high-speed adders, frequency dividers, sense amplifiers, level-shifters, input/output clock buffers and PLLs. The book concludes with a few system application examples of digital high-performance VLSI circuits. Audience: A vital reference for practicing IC designers. Can be used as a text for graduate and senior undergraduate students in the area.
Download or read book Mixed Analog digital Vlsi Devices And Technology written by Yannis Tsividis and published by World Scientific. This book was released on 2002-08-19 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device models, fabrication technology, and layout as they apply to mixed analog-digital circuits.You will learn about the many device-modeling requirements for analog work, as well as the pitfalls in models used today for computer simulators such as Spice. Also included is information on fabrication technologies developed specifically for mixed-signal VLSI chips, plus guidance on the layout of mixed analog-digital chips for a high degree of analog-device matching and minimum digital-to-analog interference.This reference book features an intuitive introduction to MOSFET operation that will enable you to view with insight any MOSFET model — besides thorough discussions on valuable large-signal and small-signal models.Filled with practical information, this first-of-its-kind book will help you grasp the nuances of mixed-signal VLSI-device models and layout that are crucial to the design of high-performance chips.
Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Download or read book Device Electronics for Integrated Circuits written by Richard S. Muller and published by John Wiley & Sons. This book was released on 2002-10-28 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
Download or read book Microelectronics Education Proceedings Of The European Workshop written by George Kamarinos and published by World Scientific. This book was released on 1996-08-22 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1st EWME is an International Tribune where: The Education in Microelectronics in 15 universities from 10 different countries are presented. The International Cooperation using the available multimedia is discussed. Pedagogical problems concerning the teaching of 'classical' microelectronics (technology, devices and CAD) as well as those concerning the sensors, microsystems and advanced materials are examined. Besides more general pedagogical views relative to the extended use of models, CAD and simulations are exposed.
Download or read book Latchup written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.
Download or read book RF Circuit Design written by Richard C. Li and published by John Wiley & Sons. This book was released on 2012-08-24 with total page 919 pages. Available in PDF, EPUB and Kindle. Book excerpt: Summarizes the schemes and technologies in RF circuit design, describes the basic parameters of an RF system and the fundamentals of RF system design, and presents an introduction of the individual RF circuit block design. Forming the backbone of today's mobile and satellite communications networks, radio frequency (RF) components and circuits are incorporated into everything that transmits or receives a radio wave, such as mobile phones, radio, WiFi, and walkie talkies. RF Circuit Design, Second Edition immerses practicing and aspiring industry professionals in the complex world of RF design. Completely restructured and reorganized with new content, end-of-chapter exercises, illustrations, and an appendix, the book presents integral information in three complete sections: Part One explains the different methodologies between RF and digital circuit design and covers voltage and power transportation, impedance matching in narrow-band case and wide-band case, gain of a raw device, measurement, and grounding. It also goes over equipotentiality and current coupling on ground surface, as well as layout and packaging, manufacturability of product design, and radio frequency integrated circuit (RFIC). Part Two includes content on the main parameters and system analysis in RF circuit design, the fundamentals of differential pair and common-mode rejection ratio (CMRR), Balun, and system-on-a-chip (SOC). Part Three covers low-noise amplifier (LNA), power amplifier (PA), voltage-controlled oscillator (VCO), mixers, and tunable filters. RF Circuit Design, Second Edition is an ideal book for engineers and managers who work in RF circuit design and for courses in electrical or electronic engineering.
Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.