Download or read book Bipolar Power written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bipolar Power Device Data written by Motorola, Inc and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bipolar power devices written by and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Motorola Bipolar Power Device Data written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book RCA Bipolar Power Devices written by Harris and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Cryogenic Operation of Silicon Power Devices written by Ranbir Singh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac tical means of fabricating electrical components and devices with lossless con ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering.

Download or read book Bipolar Power Transistor Data written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bipolar Power Transistor Data written by and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book IGBT written by Motorola, Inc and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bipolar power transistor data written by and published by . This book was released on 1989 with total page 583 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transient Electro Thermal Modeling of Bipolar Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-11-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

Download or read book Bipolar Power Transistor and Thyristor Data written by Motorola, Inc and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bipolar Power Transistor Data written by ON Semiconductor and published by . This book was released on 2001 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bipolar transistor and MOSFET device models written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2016-03-02 with total page 587 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.

Download or read book Modeling Bipolar Power Semiconductor Devices written by Tanya K. Gachovska and published by Springer Nature. This book was released on 2022-05-31 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.

Download or read book Modeling Bipolar Power Semiconductor Devices written by Tanya K. Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-03 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.

Download or read book Bipolar Power Transistor Data written by and published by . This book was released on 1985 with total page 1400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor, Thyristor, MOS, FET ; Handbuch.