Download or read book Label Free Biosensing written by Michael J. Schöning and published by Springer. This book was released on 2018-07-20 with total page 485 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume summarizes the state-of-the-art technologies, key advances and future trends in the field of label-free biosensing. It provides detailed insights into the different types of solid-state, label-free biosensors, their underlying transducer principles, advanced materials utilized, device-fabrication techniques and various applications. The book offers graduate students, academic researchers, and industry professionals a comprehensive source of information on all facets of label-free biosensing and the future trends in this flourishing field. Highlights of the subjects covered include label-free biosensing with: · semiconductor field-effect devices such as nanomaterial-modified capacitive electrolyte-insulator-semiconductor structures, silicon nanowire transistors, III-nitride semiconductor devices and light-addressable potentiometric sensors · impedimetric biosensors using planar and 3D electrodes · nanocavity and solid-state nanopore devices · carbon nanotube and graphene/graphene oxide biosensors · electrochemical biosensors using molecularly imprinted polymers · biomimetic sensors based on acoustic signal transduction · enzyme logic systems and digital biosensors based on the biocomputing concept · heat-transfer as a novel transducer principle · ultrasensitive surface plasmon resonance biosensors · magnetic biosensors and magnetic imaging devices

Download or read book III Nitride Semiconductors and Their Modern Devices written by Bernard Gil and published by Semiconductor Science and Tech. This book was released on 2013-08-22 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

Download or read book Semiconductor based Sensors written by Fan Ren and published by World Scientific. This book was released on 2016-08-26 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive summary of the status of emerging sensor technologies and provides a framework for future advances in the field. Chemical sensors have gained in importance in the past decade for applications that include homeland security, medical and environmental monitoring and also food safety. A desirable goal is the ability to simultaneously analyze a wide variety of environmental and biological gases and liquids in the field and to be able to selectively detect a target analyte with high specificity and sensitivity. The goal is to realize real-time, portable and inexpensive chemical and biological sensors and to use these as monitors for handheld gas, environmental pollutant, exhaled breath, saliva, urine, or blood, with wireless capability.In the medical area, frequent screening can catch the early development of diseases, reduce the suffering of patients due to late diagnoses, and lower the medical cost. For example, a 96% survival rate has been predicted in breast cancer patients if the frequency of screening is every three months. This frequency cannot be achieved with current methods of mammography due to high cost to the patient and invasiveness (radiation). In the area of detection of medical biomarkers, many different methods, including enzyme-linked immunsorbent assay (ELISA), particle-based flow cytometric assays, electrochemical measurements based on impedance and capacitance, electrical measurement of microcantilever resonant frequency change, and conductance measurement of semiconductor nanostructures, gas chromatography (GC), ion chromatography, high density peptide arrays, laser scanning quantitiative analysis, chemiluminescence, selected ion flow tube (SIFT), nanomechanical cantilevers, bead-based suspension microarrays, magnetic biosensors and mass spectrometry (MS) have been employed. Depending on the sample condition, these methods may show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor.

Download or read book GaN and ZnO based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Download or read book Medical Sensors And Lab on a chip Devices Mechanisms Biofunctionalization And Measurement Techniques written by Vinod Kumar Khanna and published by World Scientific. This book was released on 2018-02-14 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive coverage of sensor and lab-on-a-chip technologies for medical applications. Presenting a unified coverage of the operational principles and fabrication issues of the sensors and related chips, this important compendium describes the contemporary electronic devices that help to identify and effectively combat different diseases and malfunctions of the human body. It is intended to serve as an essential textbook or reference book for graduate/postgraduate students in electrical and electronic engineering, biomedical engineering, and those pursuing a course on sensor technologies in medicine. Research students and scientists too will find the self-explanatory diagrams and end-of-chapter bibliographies very useful.

Download or read book Surface Chemistry and Catalysis written by Albert F. Carley and published by Springer Science & Business Media. This book was released on 2002-09-30 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Exciting results are still emerging from the many research groups working in this fertile area and the book is an excellent stimulus to researchers at the start of the 21st century."--BOOK JACKET.

Download or read book State of the Art in Biosensors written by Toonika Rinken and published by BoD – Books on Demand. This book was released on 2013-03-13 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main challenge in biosensor development is their application for various practical tasks to provide a continuous and reliable flow of information about the indicators of natural and industrial processes and the surroundings, so enabling adequate feedback and control. Biosensors can provide essential information, as the quality of life depends mainly on our knowledge about what we breathe, what we eat and how our bodies are able to metabolize the material, which we contact. This book includes 14 chapters, written by 52 authors and is focused on the applications of biosensors for monitoring the parameters of environment, the quality of food and biomarkers of health.

Download or read book Analysis and Optimization of AlGaN GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.

Download or read book Materials for Advanced Packaging written by Daniel Lu and published by Springer. This book was released on 2016-11-18 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt: Significant progress has been made in advanced packaging in recent years. Several new packaging techniques have been developed and new packaging materials have been introduced. This book provides a comprehensive overview of the recent developments in this industry, particularly in the areas of microelectronics, optoelectronics, digital health, and bio-medical applications. The book discusses established techniques, as well as emerging technologies, in order to provide readers with the most up-to-date developments in advanced packaging.

Download or read book Infrared Ellipsometry on Semiconductor Layer Structures written by Mathias Schubert and published by Springer Science & Business Media. This book was released on 2004-11-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.

Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Download or read book Chemical Solution Deposition of Functional Oxide Thin Films written by Theodor Schneller and published by Springer Science & Business Media. This book was released on 2014-01-24 with total page 801 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.

Download or read book Wearable Bioelectronics written by Anthony P.F. Turner and published by Elsevier. This book was released on 2019-11-26 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wearable Bioelectronics presents the latest on physical and (bio)chemical sensing for wearable electronics. It covers the miniaturization of bioelectrodes and high-throughput biosensing platforms while also presenting a systemic approach for the development of electrochemical biosensors and bioelectronics for biomedical applications. The book addresses the fundamentals, materials, processes and devices for wearable bioelectronics, showcasing key applications, including device fabrication, manufacturing, and healthcare applications. Topics covered include self-powering wearable bioelectronics, electrochemical transducers, textile-based biosensors, epidermal electronics and other exciting applications. - Includes comprehensive and systematic coverage of the most exciting and promising bioelectronics, processes for their fabrication, and their applications in healthcare - Reviews innovative applications, such as self-powering wearable bioelectronics, electrochemical transducers, textile-based biosensors and electronic skin - Examines and discusses the future of wearable bioelectronics - Addresses the wearable electronics market as a development of the healthcare industry

Download or read book Bioelectric Sensors written by Spyridon Kintzios and published by . This book was released on 2020-09-04 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bioelectric sensors are unique diagnostic principles and technologies. Although they share many traits with electrochemical sensors, especially regarding the common features of instrumentation, they are focused on the measurement of the electric properties of biorecognition elements as a reflection of cellular, biological, and biomolecular functions in a rapid, very sensitive, and often non-invasive manner. Bioelectric sensors offer a plethora of options in terms both of assay targets (molecules, cells, organs, and organisms) and methodological approaches (e.g., potentiometry, impedance spectrometry, and patch-clamp electrophysiology). Irrespective of the method of choice, "bioelectric profiling" is being rapidly established as a superior concept for a number of applications, including in vitro toxicity, signal transduction, real-time medical diagnostics, environmental risk assessment, and drug development. This Special Issue is the first that is exclusively dedicated to the advanced and emerging concepts and technologies of bioelectric sensors. Topics include, but are not restricted to, bioelectric sensors for single cell analysis, electrophysiological olfactory and volatile organic compounds sensors, impedimetric biosensors, microbial fuel cell biosensors, and implantable autonomous bioelectric micro- and nano-sensors.

Download or read book Graphene Bioelectronics written by Ashutosh Tiwari and published by Elsevier. This book was released on 2017-11-22 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene Bioelectronics covers the expending field of graphene biomaterials, a wide span of biotechnological breakthroughs, opportunities, possibilities and challenges. It is the first book that focuses entirely on graphene bioelectronics, covering the miniaturization of bioelectrode materials, bioelectrode interfaces, high-throughput biosensing platforms, and systemic approaches for the development of electrochemical biosensors and bioelectronics for biomedical and energy applications. The book also showcases key applications, including advanced security, forensics and environmental monitoring. Thus, the evolution of these scientific areas demands innovations in crosscutting disciplines, starting from fabrication to application. This book is an important reference resource for researchers and technologists in graphene bioelectronics—particularly those working in the area of harvest energy biotechnology—employing state-of-the-art bioelectrode materials techniques. - Offers a comprehensive overview of state-of-art research on graphene bioelectronics and their potential applications - Provides innovative fabrication strategies and utilization methodologies, which are frequently adopted in the graphene bioelectronics community - Shows how graphene can be used to make more effective energy harvesting devices

Download or read book Nanobiosensors for Biomolecular Targeting written by Subash C.B. Gopinath and published by Elsevier. This book was released on 2018-10-23 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanobiosensors for Bio-molecular Targeting presents the latest analytical methods for the detection of different substances in the range of small molecules to whole cells, exploring the advantages and disadvantages of each method. Biosensors combine the component of biological origin and physicochemical detector to show the presence of analytes in a given sample. The use of bionanotechnology has led to a significant advancement in the progression of nanobiosensors and has been effectively used for biomedical diagnosis.

Download or read book GaN Based HEMTs for High Voltage Operation Design Technology and Characterization written by Eldad Bahat-Treidel and published by Cuvillier Verlag. This book was released on 2012-06-08 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN)-based High Electron Mobility Transistors (HEMTs) for high voltage, high power switching and regulating for space applications are studied in this work. Efficient power switching is associated with operation in high OFF-state blocking voltage while keeping the ON-state resistance, the dynamic dispersion and leakage currents as low as possible. The potential of such devices to operate at high voltages is limited by a chain of factors such as subthreshold leakages and the device geometry. Blocking voltage enhancement is a complicated problem that requires parallel methods for solution; epitaxial layers design, device structural and geometry design, and suitable semiconductor manufacturing technique. In this work physical-based device simulation as an engineering tool was developed. An overview on GaN-based HEMTs physical based device simulation using Silvaco-“ATLAS” is given. The simulation is utilized to analyze, give insight to the modes of operation of the device and for design and evaluation of innovative concepts. Physical-based models that describe the properties of the semiconductor material are introduced. A detailed description of the specific AlGaN/GaN HEMT structure definition and geometries are given along with the complex fine meshing requirements. Nitride-semiconductor specific material properties and their physical models are reviewed focusing on the energetic band structure, epitaxial strain tensor calculation in wurtzite materials and build-in polarization models. Special attention for thermal conductivity, carriers’ mobility and Schottky-gate-reverse-bias-tunneling is paid. Empirical parameters matching and adjustment of models parameters to match the experimental device measured results are discussed. An enhancement of breakdown voltage in AlxGa1-xN/GaN HEMT devices by increasing the electron confinement in the transistor channel using a low Al content AlyGa1-yN back-barrier layer structure is systematically studied. It is shown that the reduced sub-threshold drain-leakage current through the buffer layer postpones the punch-through and therefore shifts the breakdown of the device to higher voltages. It is also shown that the punch-through voltage (VPT) scales up with the device dimensions (gate to drain separation). An optimized electron confinement results both, in a scaling of breakdown voltage with device geometry and a significantly reduced sub-threshold drain and gate leakage currents. These beneficial properties are pronounced even further if gate recess technology is applied for device fabrication. For the systematic study a large variations of back-barrier epitaxial structures were grown on sapphire, n-type 4H-SiC and semi-insulating 4H-SiC substrates. The devices with 5 μm gate-drain separation grown on n-SiC owning Al0.05Ga0.95N and Al0.10Ga0.90N back-barrier exhibit 304 V and 0.43 m × cm2 and 342 V and 0.41 m × cm2 respectively. To investigate the impact of AlyGa1-yN back-barrier on the device properties the devices were characterized in DC along with microwave mode and robustness DC-step-stress test. Physical-based device simulations give insight in the respective electronic mechanisms and to the punch-through process that leads to device breakdown. Systematic study of GaN-based HEMT devices with insulating carbon-doped GaN back-barrier for high voltage operation is also presented. Suppression of the OFF-state sub-threshold drain leakage-currents enables breakdown voltage enhancement over 1000 V with low ON-state resistance. The devices with 5 μm gate-drain separation on SI-SiC and 7 μm gate-drain separation on n-SiC exhibit 938 V and 0.39 m × cm2 and 942 V and 0.39 m × cm2 respectively. Power device figure of merit of ~2.3 × 109 V2/-cm2 was calculated for these devices. The impacts of variations of carbon doping concentration, GaN channel thickness and substrates are evaluated. Trade-off considerations in ON-state resistance and of current collapse are addressed. A novel GaN-based HEMTs with innovative planar Multiple-Grating-Field-Plates (MGFPs) for high voltage operation are described. A synergy effect with additional electron channel confinement by using a heterojunction AlGaN back-barrier is demonstrated. Suppression of the OFF-state sub-threshold gate and drain leakage-currents enables breakdown voltage enhancement over 700 V and low ON-state resistance of 0.68 m × cm2. Such devices have a minor trade-off in ON-state resistance, lag factor, maximum oscillation frequency and cut-off frequency. Systematic study of the MGFP design and the effect of Al composition in the back-barrier are described. Physics-based device simulation results give insight into electric field distribution and charge carrier concentration depending on field-plate design. The GaN superior material breakdown strength properties are not always a guarantee for high voltage devices. In addition to superior epitaxial growth design and optimization for high voltage operation the device geometrical layout design and the device manufacturing process design and parameters optimization are important criteria for breakdown voltage enhancement. Smart layout prevent immature breakdown due to lateral proximity of highly biased interconnects. Optimization of inter device isolation designed for high voltage prevents substantial subthreshold leakage. An example for high voltage test device layout design and an example for critical inter-device insulation manufacturing process optimization are presented. While major efforts are being made to improve the forward blocking performance, devices with reverse blocking capability are also desired in a number of applications. A novel GaN-based HEMT with reverse blocking capability for Class-S switch-mode amplifiers is introduced. The high voltage protection is achieved by introducing an integrated recessed Schottky contact as a drain electrode. Results from our Schottky-drain HEMT demonstrate an excellent reverse blocking with minor trade-off in the ON-state resistance for the complete device. The excellent quality of the forward diode characteristics indicates high robustness of the recess process. The reverse blocking capability of the diode is better than –110 V. Physical-based device simulations give insight in the respective electronic mechanisms. Zusammenfassung In dieser Arbeit wurden Galliumnitrid (GaN)-basierte Hochspannungs-HEMTs (High Electron Mobility Transistor) für Hochleistungsschalt- und Regelanwendungen in der Raumfahrt untersucht. Effizientes Leistungsschalten erfordert einen Betrieb bei hohen Sperrspannungen gepaart mit niedrigem Einschaltwiderstand, geringer dynamischer Dispersion und minimalen Leckströmen. Dabei wird das aus dem Halbleitermaterial herrührende Potential für extrem spannungsfeste Transistoren aufgrund mehrerer Faktoren aus dem lateralen und dem vertikalen Bauelementedesign oft nicht erreicht. Physikalisch-basierte Simulationswerkzeuge für die Bauelemente wurden daher entwickelt. Die damit durchgeführte Analyse der unterschiedlichen Transistorbetriebszustände ermöglichte das Entwickeln innovativer Bauelementdesignkonzepte. Das Erhöhen der Bauelementsperrspannung erfordert parallele und ineinandergreifende Lösungsansätze für die Epitaxieschichten, das strukturelle und das geometrische Design und für die Prozessierungstechnologie. Neuartige Bauelementstrukturen mit einer rückseitigen Kanalbarriere (back-barrier) aus AlGaN oder Kohlenstoff-dotierem GaN in Kombination mit neuartigen geometrischen Strukturen wie den Mehrfachgitterfeldplatten (MGFP, Multiple-Grating-Field-Plate) wurden untersucht. Die elektrische Gleichspannungscharakterisierung zeigte dabei eine signifikante Verringerung der Leckströme im gesperrten Zustand. Dies resultierte bei nach wie vor sehr kleinem Einschaltwiderstand in einer Durchbruchspannungserhöhung um das etwa Zehnfache auf über 1000 V. Vorzeitige Spannungsüberschläge aufgrund von Feldstärkenspitzen an Verbindungsmetallisierungen werden durch ein geschickt gestaltetes Bauelementlayout verhindert. Eine Optimierung der Halbleiterisolierung zwischen den aktiven Strukturen führte auch im kV-Bereich zu vernachlässigbaren Leckströme. Während das Hauptaugenmerk der Arbeit auf der Erhöhung der Spannungsfestigkeit im Vorwärtsbetrieb des Transistors lag, ist für einige Anwendung auch ein rückwärtiges Sperren erwünscht. Für Schaltverstärker im S-Klassenbetrieb wurde ein neuartiger GaN-HEMT entwickelt, dessen rückwärtiges Sperrverhalten durch einen tiefgelegten Schottkykontakt als Drainelektrode hervorgerufen wird. Eine derartige Struktur ergab eine rückwärtige Spannungsfestigkeit von über 110 V.