Download or read book Basic Properties of III V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Download or read book Advances in Microelectronics Reviews Vol 1 written by Sergey Yurish and published by Lulu.com. This book was released on 2018-01-12 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1st volume of 'Advances in Microelectronics: Reviews' Book Series contains 19 chapters written by 72 authors from academia and industry from 16 countries. With unique combination of information in each volume, the 'Advances in Microelectronics: Reviews' Book Series will be of value for scientists and engineers in industry and at universities. In order to offer a fast and easy reading of the state of the art of each topic, every chapter in this book is independent and self-contained. All chapters have the same structure: first an introduction to specific topic under study; second particular field description including sensing applications. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Download or read book Advances in Data Mining Applications and Theoretical Aspects written by Petra Perner and published by Springer. This book was released on 2016-06-27 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the 16th Industrial Conference on Advances in Data Mining, ICDM 2016, held in New York, NY, USA, in July 2016. The 33 revised full papers presented were carefully reviewed and selected from 100 submissions. The topics range from theoretical aspects of data mining to applications of data mining, such as in multimedia data, in marketing, in medicine, and in process control, industry, and society.
Download or read book Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers written by Roshanak Lehna and published by kassel university press GmbH. This book was released on 2017-11-13 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.
Download or read book Frontiers in Optics and Photonics written by Federico Capasso and published by Walter de Gruyter GmbH & Co KG. This book was released on 2021-06-08 with total page 783 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a cutting-edge research overview on the latest developments in the field of Optics and Photonics. All chapters are authored by the pioneers in their field and will cover the developments in Quantum Photonics, Optical properties of 2D Materials, Optical Sensors, Organic Opto-electronics, Nanophotonics, Metamaterials, Plasmonics, Quantum Cascade lasers, LEDs, Biophotonics and biomedical photonics and spectroscopy.
Download or read book GaN and ZnO based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Download or read book Bulletin of the Atomic Scientists written by and published by . This book was released on 1961-05 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Bulletin of the Atomic Scientists is the premier public resource on scientific and technological developments that impact global security. Founded by Manhattan Project Scientists, the Bulletin's iconic "Doomsday Clock" stimulates solutions for a safer world.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Advanced Semiconductor Heterostructures written by Mitra Dutta and published by World Scientific. This book was released on 2003 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semi-conductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semi-conductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments. Contents: Novel Heterostructure Devices: Electron-Phonon Wave Interactions in Inter-subband Laser Heterostructures (M Kisin et al.); Quantum Dot Infrared Detectors and Sources (P Bhattacharya et al.);Generation of Terahertz Emission Based on Intersubband Transitions (Q Hu); Midinfrared GaSb-Based Lasers with Type I Heterointerfaces (D V Donetsky et al.); Advances in Quantum Dot Research and Technology: The Path to Applications
Download or read book Nitride Semiconductors Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
Download or read book The Sense of an Ending written by Julian Barnes and published by Vintage. This book was released on 2011-10-05 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: BOOKER PRIZE WINNER • NATIONAL BESTSELLER • A novel that follows a middle-aged man as he contends with a past he never much thought about—until his closest childhood friends return with a vengeance: one of them from the grave, another maddeningly present. A novel so compelling that it begs to be read in a single setting, The Sense of an Ending has the psychological and emotional depth and sophistication of Henry James at his best, and is a stunning achievement in Julian Barnes's oeuvre. Tony Webster thought he left his past behind as he built a life for himself, and his career has provided him with a secure retirement and an amicable relationship with his ex-wife and daughter, who now has a family of her own. But when he is presented with a mysterious legacy, he is forced to revise his estimation of his own nature and place in the world.
Download or read book Bulletin of the Atomic Scientists written by and published by . This book was released on 1970-06 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Bulletin of the Atomic Scientists is the premier public resource on scientific and technological developments that impact global security. Founded by Manhattan Project Scientists, the Bulletin's iconic "Doomsday Clock" stimulates solutions for a safer world.
Download or read book Grain Boundary Phenomena in Electronic Ceramics written by Lionel M. Levinson and published by . This book was released on 1981 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Manipulating Quantum Systems written by National Academies of Sciences, Engineering, and Medicine and published by National Academies Press. This book was released on 2020-09-14 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of atomic, molecular, and optical (AMO) science underpins many technologies and continues to progress at an exciting pace for both scientific discoveries and technological innovations. AMO physics studies the fundamental building blocks of functioning matter to help advance the understanding of the universe. It is a foundational discipline within the physical sciences, relating to atoms and their constituents, to molecules, and to light at the quantum level. AMO physics combines fundamental research with practical application, coupling fundamental scientific discovery to rapidly evolving technological advances, innovation and commercialization. Due to the wide-reaching intellectual, societal, and economical impact of AMO, it is important to review recent advances and future opportunities in AMO physics. Manipulating Quantum Systems: An Assessment of Atomic, Molecular, and Optical Physics in the United States assesses opportunities in AMO science and technology over the coming decade. Key topics in this report include tools made of light; emerging phenomena from few- to many-body systems; the foundations of quantum information science and technologies; quantum dynamics in the time and frequency domains; precision and the nature of the universe, and the broader impact of AMO science.
