Download or read book Bandstructure Engineering of Indium Arsenide Quantum Dots in Gallium Arsenide Antimonide Barriers for Photovoltaic Applications written by Jonathan Boyle and published by ProQuest. This book was released on 2008 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increasing the efficiency of solar cell technology is one of the current research aims being under taken in order to help supply growing global energy demands. The research presented in this thesis contributes to the current materials hunt for suitable candidates for an Intermediate Band Solar Cell (IBSC). A background on other "third generation" photovoltaic concepts along with details about the IBSC concept is also presented.
Download or read book Indium Gallium arsenide Quantum Dot Materials for Solar Cell Applications written by Anup Pancholi and published by ProQuest. This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The last few years have seen rapid advances in nanoscience and nanotechnology, allowing unprecedented manipulation of nanostructures controlling solar energy capture, conversion, and storage. Quantum confined nanostructures, such as quantum wells (QWs) and quantum dots (QDs) have been projected as potential candidates for the implementation of some high efficiency photovoltaic device concepts, including the intermediate band solar cell (IBSC). In this dissertation research, we investigated multiple inter-related themes, with the main objective of providing a deeper understanding of the physical and optical properties of QD structures relevant to the IBSC concept. These themes are: (i) Quantum engineering and control of energy levels in QDs, via a detailed study of the electronic coupling in multilayer QD structures; (ii) Controlled synthesis of well-organized, good quality, high volume density, and uniform-size QD arrays, in order to maximize the absorption efficiency and to ensure the coupling between the dots and the formation of the minibands; and (iii) Characterization of carrier dynamics and development of techniques to enhance the charge transport and efficient light harvesting. A major issue in a QD-based IBSC is the occurrence of charge trapping, followed by recombination in the dots, which results in fewer carriers being collected and hence low quantum efficiency. In order to collect most of the light-generated carriers, long radiative lifetimes, higher mobilities, and a lower probability of non-radiative recombination events in the solar cell would be desirable. QD size-dependent radiative lifetime and electronic coupling in multilayer QD structures were studied using photoluminescence (PL) and time-resolved photoluminescence (TRPL). For the uncoupled QD structures with thick barriers between the adjacent QD layers, the radiative lifetime was found to increase with the QD size, which was attributed to increased oscillator strength in smaller size dots. On the other hand, in the sample with thin barrier and electronically coupled QDs, the radiative lifetime increases and later decreases with the dot size. This is due to the enhancement of the oscillator strength in the larger size, coherently coupled QDs. In order to improve the quality of multi-layer QD structures, strain compensated barriers were introduced between the QD layers grown on off-oriented GaAs (311)B substrate. The QD shape anisotropy resulted from the growth on off-oriented substrate was studied using polarization-dependent PL measurements both on the surface and the edge of the samples. The transverse electric mode of the edge-emitted PL showed about 5° deviation from the sample surface for the dots grown on (311)B GaAs, which was attributed to the tilted vertical alignment and the shape asymmetry of dots resulted from the substrate orientation. Significant structural quality improvements were attained by introducing strain compensated barriers, i.e., reduction of misfit dislocations and uniform dot size formation. Longer lifetime (~1 ns) and enhanced PL intensity at room temperature were obtained, compared to those in conventional multilayer (In, Ga)As/GaAs QD structures. A significant increase in the open circuit voltage (V oc) was observed for the solar cell devices fabricated with the strain compensated structures. A major issue in a QD IBSC is the occurrence of charge trapping, followed by recombination in the dots, which results in fewer carriers being collected, and hence low quantum efficiency. We proposed and studied a novel structure, in which InAs QDs were sandwiched between GaAsSb (12% Sb) strain-reducing layers (SRLs) with various thicknesses. Both short (~1 ns) and long (~4-6 ns) radiative lifetimes were measured in the dots and were attributed to type-I and type-II transitions, respectively, which were induced by the band alignment modifications at the QD/barrier interface in the structures analyzed, due to the quantum confinement effect resulting from different GaAsSb barrier thicknesses. Based on our findings, a structure with type-II QD/barrier interface with relatively long radiative recombination lifetime may be a viable candidate in designing IBSC.
Download or read book Indium Arsenide gallium Arsenide Antimonide Quantum Dots and Their Applications in Intermediate Band Solar Cells written by Anthony James Meleco and published by . This book was released on 2016 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Lattice matched and Strained Indium Gallium Arsenide written by P. Bhattacharya and published by Inst of Engineering & Technology. This book was released on 2000-09 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: "...provides an authoritative and convenient collection of pertinent data." - Optical and Quantum Electronics
Download or read book Substrate Engineering for Defect Reduction and Microsctructure Control in the Growth of Indium Arsenide on 100 Gallium Arsenide written by Suryanarayanan Ganesan and published by . This book was released on 2006 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Type II Gallium Antimonide Quantum Dots in Gallium Arsenide Single Junction Solar Cells written by Abu Syed Mahajumi and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Nonlinear Optical Properties of Indium Arsenide gallium Arsenide and Indium Gallium Arsenide gallium Arsenide Self assembled Quantum Dots written by Syed Hassan Shah and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs Solar Cell Radiation Handbook written by B. E. Anspaugh and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of Semiconductor Nanocrystals written by S. V. Gaponenko and published by Cambridge University Press. This book was released on 1998-10-28 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines the optical properties of low-dimensional semiconductor structures, a hot research area - for graduate students and researchers.
Download or read book Handbook of Photovoltaic Science and Engineering written by Antonio Luque and published by John Wiley & Sons. This book was released on 2011-01-31 with total page 1172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The most comprehensive, authoritative and widely cited reference on photovoltaic solar energy Fully revised and updated, the Handbook of Photovoltaic Science and Engineering, Second Edition incorporates the substantial technological advances and research developments in photovoltaics since its previous release. All topics relating to the photovoltaic (PV) industry are discussed with contributions by distinguished international experts in the field. Significant new coverage includes: three completely new chapters and six chapters with new authors device structures, processing, and manufacturing options for the three major thin film PV technologies high performance approaches for multijunction, concentrator, and space applications new types of organic polymer and dye-sensitized solar cells economic analysis of various policy options to stimulate PV growth including effect of public and private investment Detailed treatment covers: scientific basis of the photovoltaic effect and solar cell operation the production of solar silicon and of silicon-based solar cells and modules how choice of semiconductor materials and their production influence costs and performance making measurements on solar cells and modules and how to relate results under standardised test conditions to real outdoor performance photovoltaic system installation and operation of components such as inverters and batteries. architectural applications of building-integrated PV Each chapter is structured to be partially accessible to beginners while providing detailed information of the physics and technology for experts. Encompassing a review of past work and the fundamentals in solar electric science, this is a leading reference and invaluable resource for all practitioners, consultants, researchers and students in the PV industry.
Download or read book Strain Effect in Semiconductors written by Yongke Sun and published by Springer Science & Business Media. This book was released on 2009-11-14 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Download or read book Semiconductor Physics written by Karlheinz Seeger and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo scow. Since then new ideas have been developed in the field of semi conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc ture constant from surface quantization in inversion layers. New tech niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as pects.
Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
