Download or read book Atomic scale structures at reactive silicide silicon interfaces written by Andrei Catana and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Scale Structure and Dynamics of Amorphous crystal Interfaces in Silicon written by Noam Bernstein and published by . This book was released on 1998 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Scale Characterization and First Principles Studies of Si3N4 Interfaces written by Weronika Walkosz and published by Springer Science & Business Media. This book was released on 2011-04-06 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.

Download or read book Atomic Scale Structure and Properties of Interfaces written by Arizona State University. NSF High Resolution Electron Microscopy Facility. Centre for Solid State Science and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Evolution of Thin Film and Surface Microstructure Volume 202 written by C. V. Thompson and published by . This book was released on 1991-05-31 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Lectures On Solid Surfaces And Interfaces Proceedings Of The International School On Surface Physics written by D S Wang and published by World Scientific. This book was released on 1990-11-02 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings contains 9 lectures given by active research scientists, introducing the latest developments in the field of surface physics. The main topics cover both experimental and theoretical aspects of the atomic and electronic structure of semiconductor surface, its characterization by direct and inverse photoemission and STM, chemisorption and bonding on semiconductor, growth of III-V compound semiconductor and metal surface, metal-semiconductor interface and metal silicides.

Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Download or read book Aberration Corrected Analytical Transmission Electron Microscopy written by Rik Brydson and published by John Wiley & Sons. This book was released on 2011-08-02 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is concerned with the theory, background, and practical use of transmission electron microscopes with lens correctors that can correct the effects of spherical aberration. The book also covers a comparison with aberration correction in the TEM and applications of analytical aberration corrected STEM in materials science and biology. This book is essential for microscopists involved in nanoscale and materials microanalysis especially those using scanning transmission electron microscopy, and related analytical techniques such as electron diffraction x-ray spectrometry (EDXS) and electron energy loss spectroscopy (EELS).

Download or read book Atomic Structure of the Vicinal Interface Between Silicon Carbide and Silicon Dioxide written by Peizhi Liu (Researcher in materials science and engineering) and published by . This book was released on 2014 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The interface between silicon carbide (SiC) and silicon dioxide (SiO2) is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies showed an inverse relationship between the mobility and the transition layer width at SiC/SiO2 interface. In this research the transition region at the interface was investigated with atomic resolution transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). From a tilting series of high resolution TEM imaging and a through focal series of Z-contrast imaging, the 3D atomic structure of the SiC/SiO2 vicinal interface was constructed. The vicinal interface was revealed to consist of atomic steps and facets deviating from the ideal off-axis cut plane, which caused the atomic scale roughness of the interface. This is in strict contrast to previous studies that concluded on a chemical composition change. During the Z-contrast imaging, simultaneous EELS spectra were collected at the interface. A new model based method was developed to quantify these EELS spectra more precisely. Composition profiles of Si, C and O across the interface were extracted from the spectra. Composition profiles showed that the transition region was due to the vicinal interface and its atomic scale roughness but minimal stoichiometric change. Compositions calculated with a chemometrics approach conformed that the interface was stoichiometric. The transition layer width had an intrinsic value of ~2 nm viewed from the step edge-on direction. In addition, the interface of oxide layers grown on an on-axis cut substrate was examined with the same method mentioned above. The results showed the on-axis cut interface had the same composition fluctuation region as the off-axis cut interface viewing from the step edge-on direction. The roughness is directly correlated with processing conditions and the material system may have an intrinsic local roughness. This atomic scale roughness of the interface is limiting the electron mobility and reliability of SiC based devices.

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2004 with total page 1098 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005-11-02 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Download or read book Atomic Scale Structure of Interfaces written by and published by . This book was released on 1990 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book JJAP written by and published by . This book was released on 2004 with total page 1306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structure and Chemistry of Defect Passivation at the Interface Between Silicon Dioxide and Silicon Carbide written by Yi Xu and published by . This book was released on 2014 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide bandgap semiconductor which has material properties well-suited for high-power, high-temperature electronics applications. The performance of SiC transistors is limited by electrical defects formed at the SiO2/SiC interface under high temperature oxidation. A central goal of this work is to improve our atomic level understanding of electrical defects in SiC devices, and to further develop methods to minimize defects. Introduction of interfacial nitrogen (N) or phosphorus (P) reduces the interface (charge) trap density, increases the SiC charge mobility (in the semiconductor channel), and thus device performance. This dissertation is focused on the chemistry of the SiO2/SiC interface, the critical interface in future SiC-based devices. We address issues of composition, structure, chemical bonding, and reaction behavior of N and P that we have used to improve device performance. We report photoemission and ion scattering studies to determine the concentrations of N and P passivating agents at the SiO2/SiC interface, and develop a more complete understanding of the mechanism and kinetics for the passivation processes on different crystallographic surfaces. The study shows that N (and P) passivated SiO2/SiC structures have a thin oxy-nitride (oxy-phosphide) interface dielectric layer that cannot be removed by a buffered HF etchant. The same dielectric structures are completely etched when formed on Si. Atomic scale modeling, combined with our experimental observations, results in the suggestion of likely bonding structures of N and P at the SiO2/SiC interface. The depth profile of N and P at SiO2/SiC interface has also been established and provides further insights into the nature of N and P as surface passivating additives.

Download or read book Conf rence Internationale Sur la Dynamique Des Interfaces written by Léonard Dobrzynski and published by . This book was released on 1984 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Materials and Process Characterization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.