Download or read book Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Scale Models of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Toward a Predictive Atomistic Model of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.
Download or read book Meeting Abstracts written by Electrochemical Society. Meeting and published by . This book was released on 1996 with total page 1700 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Dynamics Simulation of Low Energy Boron and Arsenic Implant Into Silicon written by and published by . This book was released on 1996 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have studied the implantation of boron and arsenic ions into silicon by classical molecular dynamics simulation. Single ion implant into the dimer reconstructed Si{l_brace}100{r_brace}(2x1) surface has been examined at energies between 0.25 keV and 5.0 keV, at both normal incidence and at non-channeling incidence. By using a new model for electronic stopping, developed for semiconductors and containing only one fitted parameter, we have been able to accurately calculate the depth profile of the implanted B and as atoms. The results of the calculations are compared to the predictions from a binary collision (BC) model for the dopant profile, and to experimental data. This allows us to examine the low energy limits on the validity of the BC approximation, with the aim of producing modifications to the BC model to extend its validity into the sub-keV regime.
Download or read book Ion Solid Interactions for Materials Modification and Processing Volume 396 written by D. B. Poker and published by . This book was released on 1996-05-23 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several beam-solid interaction techniques have been developed that can either stand alone or be used in connection with others for materials processing, for fabrication of devices with enhanced electro-optical and mechanical properties, and with enhanced resistance to corrosion and erosion. For example, advances in focused ion beams (FIB) have brought out-of-reach ideas and applications to fruition. This book from MRS focuses on the developments in ion-beam-assisted processing of materials and reviews successful applications of the techniques. Topics include: fundamentals of ion-solid interactions; ion-beam mixing; radiation damage; insulators and wide bandgap materials; polymers; optical materials; plasma and ion-assisted techniques; metals and tribology; focused ion beams; fundamental semiconductor processing and compound semiconductors.
Download or read book Improved Atomic scale Simulations of Silicon written by Maria Timonova and published by . This book was released on 2010 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Processes and Devices 1998 written by Kristin De Meyer and published by Springer Science & Business Media. This book was released on 1998-08-17 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Ion Implantation and Activation written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2013-11-05 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.
Download or read book Effect of Thermal Annealing on Arsenic Ion implanted Boron doped Czochralski Silicon written by Yan Bai and published by . This book was released on 1997 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Download or read book Annealing of ion implanted silicon written by B. J. Smith and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
