Download or read book Atomic Scale Models of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
Download or read book Toward a Predictive Atomistic Model of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.
Download or read book Defect and Dopant Diffusion in Ion Implanted Silcon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present an atomistic approach to the development of predictive process simulation tools. First principles methods are used to construct a database of defect and dopant energetics. This is used as input for kinetic Monte Carlo simulations of ion implantation and dopant diffusion under a wide variety of technologically relevant conditions. Our simulations are in excellent agreement with annealing experiments on 20-80 keV B implants into Si, and with those on 50 keV Si implants into complex B-doped structures. Our calculations produce novel predictions of the time evolution of the electrically active B fraction during annealing.
Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Download or read book Atomic scale Mechanisms of Dopant and Self diffusion in Silicon written by Ant Ural and published by . This book was released on 2001 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Download or read book Ion Implantation in Semiconductors written by Ingolf Ruge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.
Download or read book Atomic Scale Modeling of Stress and Pairing Effects on Dopant Behavior in Silicon written by Chihak Ahn and published by . This book was released on 2007 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation and Experimental Study of Boron Clustering in Crystalline Silicon written by Weiwei Luo and published by . This book was released on 2000 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors and Other Materials written by Billy Crowder and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Download or read book Surface Morphology Evolution in Silicon During Ion Beam Processing written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Semiconductor Industry Association (SIA) projects that the semiconductor chips used in personal computers and scientific workstations will reach five times the speed and ten times the memory capacity of the current pentium-class processor by the year 2007. However, 1 GHz on-chip clock speeds and 64 Gbits/Chip DRAM technology will not come easy and without a price. Such technologies will require scaling the minimum feature size of CMOS devices (the transistors in the silicon chip) down to below 100nm from the current 180 to 250 nm. This requirement has profound implications for device manufacturing. Existing processing techniques must increasingly be understood quantitatively and modeled with unprecedented precision. Indeed, revolutionary advances in the development of physics-based process simulation tools will be required to achieve the goals for cost efficient manufacturing, and to satisfy the needs of the defense industrial base. These advances will necessitate a fundamental improvement in our basic understanding of microstructure evolution during processing. In order to cut development time and costs, the semiconductor industry makes extensive use of simple models of dopant implantation, and of phenomenological models of defect annealing and diffusion. However, the production of a single device often requires more than 200 processing steps, and the cumulative effects of the various steps are far too complex to be treated with these models. The lack of accurate process modeling simulators is proving to be a serious impediment to the development of next generation devices. New atomic-level models are required to describe the point defect distributions produced by the implantation process, and the defect and dopant diffusion resulting from rapid thermal annealing steps. In this LDRD project, we investigated the migration kinetics of defects and dopants in silicon both experimentally and theoretically to provide a fundamental database for use in the development of predictive process simulators. The results were then used to develop kinetic Monte Carlo simulations that, when coupled to molecular dynamics studies, could be used to study and compare the long time and length scale behavior of ion implanted silicon to the predictions of experiments. The results of these kinetic Monte Carlo simulations were validated with experimental data and then used to predict boron activation fractions during annealing of ion implanted silicon under conditions similar to those encountered in the semiconductor manufacturing environment. The success of the work and promise of the approach are reflected in the number of publication and in the fact that following completion of the project we signed a funds-in CRADA with Intel corporation and Applied Materials Corporation to continue the research.
Download or read book Ion Implantation written by Geoffrey Dearnaley and published by North-Holland. This book was released on 1973 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
