Download or read book Atomic Layer Deposition Fabrication of nanoscaled films and heterostructures from mono and bimetallic precursors written by Tessa Martine Leuning and published by . This book was released on 2014 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Deposition written by Tommi Kääriäinen and published by John Wiley & Sons. This book was released on 2013-05-28 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
Download or read book Atomic Layer Deposition of Nanostructured Materials written by Nicola Pinna and published by John Wiley & Sons. This book was released on 2012-09-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.
Download or read book Atomic Layer Deposition for Surface Modifications and Solid Film Fabrication written by Haoming Yan and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Along with the unceasing development of the surface and material science, modification of substrates surfaces in nanoscale, to fabricate the functional materials with precisely controlled dimensions, refined composition and desired properties becomes crucial. In this report, atomic layer deposition (ALD), a vapor phase, sequential and self-limiting deposition process, has been used as an alternative strategy to modify the surface of materials and fabricates nanometer or micrometer level of functional materials with precise control. In the first part of this dissertation, ALD was used to modify the surface of the shape-engineered nanocrystals (SENCs), which enhanced the thermal stability of the SENCs from 300?C to 700?C and enhanced the catalytic activities of the nanocrystals as well. We also proposed a new reaction mechanism of metal-organic precursor with oxide surface, in which the conventional layered ALD growth does not happen but the oxide surface was modified via controlled metal doping. In the second part of this dissertation, ALD precursors were used to reacting with liquid substrates to fabricate freestanding solid thin films. Benefits from the unique reaction mechanism of the ALD metal-organic precursors, the thickness and the compositions of the fabricated films can be controlled. The fundamental of gas-liquid reaction has been discussed in this study. In the third part of this dissertation, area-selective ALD (AS-ALD) has been reported using carboxylic acid self-assembled monolayer as a growth inhibitor. Excellent selectivity of AS-ALD has been achieved by using this method, which could potentially be used in microfabrication as a substitution step for photolithography.
Download or read book Atomic Layer Deposition of Metal Films From Precursor Synthesis to Film Deposition written by Zhengwen Li and published by . This book was released on 2007 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature ALD deposition is important for making thin and continuous metal films. Liquid, volatile and reactive amidinates of Co and Fe complexes were developed for ALD applications. The reactions were self-limiting at low temperature (100--250°C). The films were characterized as pure and conductive metals, using H2 as the reducing agent.
Download or read book Atomic Layer Deposition for Nanotechnology written by Arthur Sherman and published by . This book was released on 2008 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanofabrication Revolution Atomic Layer Deposition and Etching at the Nanoscale written by Johnson and published by . This book was released on 2024-06-08 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Deposition of Materials for Electronic and Photonic Applications written by Francis Chalvet and published by . This book was released on 2008 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic Layer Deposition (ALD) is a technique to deposit extremely uniform thin films through surface-controlled reactions of gaseous precursors. It is the method of choice for ultrathin oxide and metal layers in the next generations of logic and memory devices, but finds application as well in nanotechnology and catalysis. An ALD reactor at laboratory scale was designed and built to study the growth of metal oxides such as Al2O3 and HfO2 on flat and porous surfaces. During the design of the process, the key aspects were the choice of two complementary chemical precursors and the time controlled injection of precursor fluxes into the deposition chamber. After assembly of the reactor the operation parameters (pressure, nitrogen throughput, precursor fluxes) were optimised. The reactor worked at vacuum pressures of about 1 torr and used a continuous flow of nitrogen for the transport of precursor gases. Uniform and controlled film growth was observed during growth of Al2O3 from trimethylaluminium and water, and during growth of HfO2 from hafnium-tetrakisdimethylamide and water. Electrical characterisation of MOS capacitors with a Pd/HfO2/Si structure and 3 or 9 nm thin layers of HfO2 showed the high quality of the insulating oxide. The deposition technique was then used to coat porous structures. Membranes with high aspect ratios pores (L/d = 300) were coated with HfO2 without modifying the process used for coating flat surfaces. The possibility offered by ALD to coat pores with a high level of control was used to tune the optical characteristics of porous photonic crystals. Opal-type photonic crystals were infiltrated with layers of Al2O3, TiO2 and VOx. The results obtained show the deposition of high quality oxide films with a thickness controllable at the nanoscale, on both flat and porous surfaces.
Download or read book Atomic Layer Deposition for Energy and Ssemiconductor Applications written by Yongmin Kim and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis, I contribute to two instrumental sectors in our current society -- semiconductor and energy -- by developing novel materials through advanced nanoscale engineering through atomic layer deposition (ALD). ALD is a deposition technique in vacuum, which can make highly uniform films with a thickness range of 1-100 nm on both 2-D and 3-D structured substrates. ALD chemistries enable the deposition of a wide diversity of materials. Furthermore, performing diverse ALD chemistries in single deposition is possible, leading to fabrication of both homogenous mixtures and heterogeneous structures (e.g. nanolaminate and metal/metal-oxide composite). First, I will discuss about the use of ALD to fabricate barium titanates and silicon nitrides for the applications in key semiconductor components in Chapters 2 and 3. The continuous downscaling of integrated circuits (ICs) necessitates the development of ultrathin oxides and nitrides, mainly used for dielectric materials and sidewall spacers in transistors, respectively. Oxide films with high dielectric constants (i.e. high-k) and low electrical leakage currents are essential for the applications of information storage devices such as dynamic random-access memory (DRAM). Using ALD, ultrathin (
Download or read book Designing Modeling Manufacturing and Testing an Atomic Layer Deposition System written by Mohamadamin Makarem and published by . This book was released on 2015 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: There are multiple techniques for depositing thin films in nanoelectronics and semiconductor industries. Each technique has its own advantage and disadvantage. Of the many techniques, chemical deposition is the most favorable since materials can be deposited in high aspect ratios and give full coverage across uneven surfaces. However the most conventional technique in chemical deposition, named chemical vapor deposition (CVD), has some limiting properties like high temperature and uncontrollable film growth. To have the advantage of chemical deposition and also being able to control film growth in monolayer resolution, a new technique has been introduced, named Atomic Layer Deposition (ALD). This technique gives a very good control on layer-bylayer film growth. It can work at low temperatures and high pressures. In manufacturing nanoantennas and MIM diodes there is a need, for having an ultra thin film with full coverage across select areas. ALD is a promising solution for ultra-thin film fabrication problems. In this work we designed, modeled, manufactured, and tested a novel ALD system. Our system is designed to do more exotic film depositions than the small-range accessible with industrially available ALDs. A typical ALD process starts with entraining a precursor in a carrier gas that brings it inside the reactor where it adsorbs on the substrate’s surface. The second step is removing the extra precursor from the chamber by purging it. The third step is adding another precursor gas to the reactor. The two precursors will react with each other on the substrate’s surface. In the fourth step a purge is used to remove excessive precursors and by-products from the reactor chamber. A well-designed reactor for this process needs to have the ability to operate under high vacuum, high temperatures, and intense reactions. In the designed reactor within this project, a showerhead, a stage heater, a ceramic spacer, and stage holder were designed and manufactured. There are four gas inlets from a top flange that feed into showerhead, which helps better gas dispersion. Also in the showerhead each of the inlets can be used to bring different gases inside the reactor for CVD processes. The designed reactor is a cross reactor, which minimizes the gas entrapment. All the flanges were designed in a way to have good ability to control the system. The tubing in this system is used to bring precursors inside the reactor. To have a good control on the flow rate of precursors, individual mass flow controllers, i.e. four ALD Solenoid Valves, are used to regulate the flow of each precursor. Bubblers are used to contain precursors at the entry point of the gas delivery line. Each bubbler has a dipping tube that extends the length of the bubbler container to give the carrier gas the ability to entrain precursors and bring them inside reactor. ALD Valve-4 is designed in a way that can switch the system from ALD to CVD. This gives us the ability to have multiple depositions in different techniques in a single run. ALD Valve-3 is designed for vacuum bubblers in case there is a precursor with very low volatility or very sensitive to high temperatures. Controlling the entire system, all at the same time, is crucial to the success of ALD. The parameters that needed to be controlled are temperature, pressure, gas flow, and each of the ALD Valves. There are five parts in the designed system that have separate thermocouples and heaters. Each of bubblers, tubings, the reaction chamber’s body, and substrate stage can get to a separate temperature using PID controllers. Finally a box designed for all the PID controllers and relays to read all the temperatures side-byside. In addition, there is a terminal box that connects all the tubings’ heaters and chamber heaters together. Low vacuum pressure can be read by either of the two thermocouple gauges installed on the system. One of the thermocouple gauges reads the pressure of the reaction chamber and the other reads the pressure inside turbopump. To control gas flow and ALD Valves, a software program was developed that can send digital signals to DAQ cards and the cards can change it to analog signal and send to MFCs and Valves. A control box is designed that contains all the four DAQ cards and a circuit that gives us the ability to control the valves by low currents. Finally the manufactured ALD was tested for process of depositing Al2O3 on top of silicon substrate. The test were performed in two batches, EDS test were performed to prove the deposition of Al2O3 also AFM test showed very flat films with 1.2 nm RMS were fabricated. The results of tests ensured the ability of the ALD to deposit films.
Download or read book Nucleation and Growth of Atomic Layer Deposition written by Zhengning Gao and published by . This book was released on 2018 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition (ALD) is a sequential, layer-by-layer, pin-hole free vapor-phase thin film deposition technique. ALD shows advantages over other thin film deposition techniques by enabling deposition of conformal and films with atomic scale controllability over thickness and composition. For ALD process, controlling the nucleation and growth is important since it will affect whether a continuous, conformal, and pin-hole free film can be deposited or not. The type of substrate and its surface functionalization determines the initial nucleation of ALD films, its evolving structure and hence the film properties. This thesis address these specific challenges in the ALD nucleation and growth (N&G) by, 1) understanding the substrate effect on N&G of ALD, 2) understanding the precursor ligands effect on N&G of ALD, 3) understanding effect of ALD N&G films coupled to optically active metal surfaces and nanostructures. In the first part of this thesis, the substrate effect on N&G of ALD is studied by ALD ZnO and Al2O3 on hydroxylated Si substrate and Au substrate. These two ALD processes have similar surface reaction. On Si substrate, 71.6% OH groups are associated with sitting molecule. No observation of nucleation delay. In Au substrate, an initial hydrophobic surface, takes 37 cycle for ALD Al2O3 to finish nucleation and grows as a film. After UV Ozone treatment to tune the Au surface into "clean"-hydrophilic state, the ALD ZnO only takes 5 cycle to finish nucleation. The second part of the thesis, the precursor ligands effect on N&G of ALD is investigated by an ALD Ru process with a zero valent Ru precursor - RuDMBD(CO)3, and H2O. It shows that the complementary effect between precursor ligands dominate the nucleation and growth of Ru film on hydroxylated surface. The third part of the thesis, ALD N&G films coupled to optically active metal and nanostructures is studied by applying ALD Al-doped-ZnO on AuNRs in anodic aluminum oxide (AAO) template to fabricate a 3D nanostructure plasmonic hot carrier device. The uniform coating of ALD film enhance the possibility to make complex plasmonic hot carrier device with moderate quantum efficiency. The study presented in this thesis opens up new direction of studying ALD N&G that focus on the substrate and precursor chemistry. While studying ALD N&G can enhance the understanding about the basic of ALD, the final goal for using ALD is for application. Conformal and pin-hole free coating is critical film deposition.
Download or read book Graphdiyne written by Yuliang Li and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphdiyne Discover the most cutting-edge developments in the study of graphdiyne from a pioneer of the field In Graphdiyne: Fundamentals and Applications in Renewable Energy and Electronics, accomplished chemist Dr. Yuliang Li delivers a practical and insightful compilation of theoretical and experimental developments in the study of graphdiyne. Of interest to both academics and industrial researchers in the fields of nanoscience, organic chemistry, carbon science, and renewable energies, the book systematically summarizes recent research into the exciting new material. Discover information about the properties of graphdiyne through theoretical simulations and experimental characterizations, as well as the development of graphdiyne with appropriate preparation technology. Learn to create new graphdiyne-based materials and better understand its intrinsic properties. Find out about synthetic methodologies, the controlled growth of aggregated state structures, and structural characterization. In addition to demonstrating the interdisciplinary potential and relevance of graphdiyne, the book also offers readers: A thorough introduction to basic structure and band gap engineering, including molecular and electronic structure, mechanical properties, and the layers structure of bulk graphdiyne Explorations of Graphdiyne synthesis and characterization, including films, nanotube arrays and nanowires, nanowalls, and nanosheets, as well as characterization methods Discussions of the functionalization of graphdiyne, including heteroatom doping, metal decoration, and absorption of guest molecules Rigorous treatments of Graphdiyne-based materials in catalytic applications, including photo- and electrocatalysts Perfect for organic chemists, electronics engineers, materials scientists, and physicists, Graphdiyne: Fundamentals and Applications in Renewable Energy and Electronics will also find its place on the bookshelves of surface and solid-state chemists, electrochemists, and catalytic chemists seeking a one-stop reference on this rising-star carbon material.
Download or read book Metal Nanocrystals written by Kallum M. Koczkur and published by American Chemical Society. This book was released on 2020-07-31 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our society depends heavily on metals. They are ubiquitous construction materials, critical interconnects in integrated circuits, common coinage materials, and more. Excitingly, new uses for metals are emerging with the advent of nanoscience, as metal crystals with nanoscale dimensions can display new and tunable properties. The optical and photothermal properties of metal nanocrystals have led to cancer diagnosis and treatment platforms now in clinical trials, while, at the same time, the ability to tune the surface features of metal nanocrystals is giving rise to designer catalysts that enable more sustainable use of precious resources. These are just two examples of how metal nanocrystals are addressing important social needs.
Download or read book Intermediate Temperature Solid Oxide Fuel Cells written by Zongping Shao and published by Springer. This book was released on 2016-09-12 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses recent advances in intermediate-temperature solid oxide fuel cells (IT-SOFCs), focusing on material development and design, mechanism study, reaction kinetics and practical applications. It consists of five chapters presenting different types of reactions and materials employed in electrolytes, cathodes, anodes, interconnects and sealants for IT-SOFCs. It also includes two chapters highlighting new aspects of these solid oxide fuel cells and exploring their practical applications. This insightful and useful book appeals to a wide readership in various fields, including solid oxide fuel cells, electrochemistry, membranes and ceramics. Zongping Shao is a Professor at the State Key Laboratory of Materials-Oriented Chemical Engineering and the College of Energy, Nanjing University of Technology, China. Moses O. Tade is a Professor at the Department of Chemical Engineering, Curtin University, Australia.
Download or read book Atomic Layer Deposition in Energy Conversion Applications written by Julien Bachmann and published by John Wiley & Sons. This book was released on 2017-03-15 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: Combining the two topics for the first time, this book begins with an introduction to the recent challenges in energy conversion devices from a materials preparation perspective and how they can be overcome by using atomic layer deposition (ALD). By bridging these subjects it helps ALD specialists to understand the requirements within the energy conversion field, and researchers in energy conversion to become acquainted with the opportunities offered by ALD. With its main focus on applications of ALD for photovoltaics, electrochemical energy storage, and photo- and electrochemical devices, this is important reading for materials scientists, surface chemists, electrochemists, electrotechnicians, physicists, and those working in the semiconductor industry.
Download or read book Handbook of Crystal Growth written by Peter Rudolph and published by Elsevier. This book was released on 2014-11-04 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy.Volume 2A - Presents the status and future of Czochralski and float zone growth of dislocation-free silicon - Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades - Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics - Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B - Explores capillarity control of the crystal shape at the growth from the melt - Highlights modeling of heat and mass transport dynamics - Discusses control of convective melt processes by magnetic fields and vibration measures - Includes imperative information on the segregation phenomenon and validation of compositional homogeneity - Examines crystal defect generation mechanisms and their controllability - Illustrates proper automation modes for ensuring constant crystal growth process - Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries
Download or read book Nanostructure Science and Technology written by Richard W. Siegel and published by Springer Science & Business Media. This book was released on 1999-09-30 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.
