Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Download or read book Circuits and Applications Using Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

Download or read book SiGe materials Processing and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Download or read book Technology for SiGe Heterostructure based CMOS Devices written by Mark Albert Armstrong and published by . This book was released on 1999 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bulk silicon is currently the substrate material of choice for the manufacture of high performance digital circuits due to its highly-developed processing technology and the relatively low cost for high-quality substrates. Silicon-based MOSFETs have reached remarkable levels of performance through device scaling. However, with each technology generation, it is becoming harder and harder to improve device performance at the same pace through traditional scaling methods alone. Short-channel effects such as velocity saturation and drain-induced barrier lowering have placed an fundamental limit on the ultimate performance of bulk Si MOSFETS. One way to raise this limit is to increase the carrier mobilities in the channel. This can be done using high-mobility Si and SiGe strained-layers. Unlike III-V-based high-mobility materials, Si/SiGe strained-layers have the advantage of being largely compatible with mainstream Si processing, which is important from a financial feasibility standpoint. This thesis examines several issues related to Si/SiGe strained-layer devices and their integration into mainstream CMOS. The first part of this work strives to predict the performance leverage of high-mobility Si/ SiGe over bulk Si devices and circuits in a realistic manner. Two-dimensional hydrodynamic simulations are used to predict static device characteristics including effects of series resistance, velocity saturation and velocity overshoot. The simulations show enhanced current drive over bulk Si devices at 0.2 [mu]m effective channel length and highlight the importance of velocity overshoot in high-mobility submicron devices. The circuit performance of Si/SiGe devices is determined from transient simulations of CMOS ring oscillators including the effects of parasitic capacitance and drain-to-source voltage at the onset of saturation Vds.sat. The simulations show a 4 to 6-fold reduction in power-delay product as compared to bulk CMOS oscillators operated at 2.5 V with the same design rules. The remainder of the thesis focuses on the fabrication and characterization of strained-Si NMOS devices. The vehicle for this work is a novel short-flow, single-mask MOSFET which can be fabbed in as little as a week. This device is superior to simple Hall mobility structures which suffer from leakage through the substrate, an inability to control the. carrier concentration and the uncertainty associated with the Hall scattering factor. I investigate a novel buried-channel strained-Si NMOS structure incorporating an n-type donor layer beneath the strained-Si channel to encourage occupation of the buried channel and increase the overall mobility. Peak mobility in a structure without a donor layer reproduces the best results in the literature for buried-channel strained-Si NMOS devices. For structures with donor layers, Coulomb scattering from charges in the donor layer eradicates any benefit from increased buried-channel occupation. I also investigate the effect of well implants on the mobility of surface . channel strained-Si NMOS devices. Similar to the universal mobility curve in bulk Si, mobility at low perpendicular electric field degrades with increasing implant dose while high field mobility is unaffected. The mobility is largely unaffected by a neutral implant species at the same dose. This leads to the conclusion that the material quality of the strained-layer is not affected by the implant, and that the mobility degradation is due solely to increased ionized impurity scattering.

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Download or read book Icccd 2000 written by and published by Allied Publishers. This book was released on 2000 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Strained Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

Download or read book SiGe Ge and Related Compounds 4 Materials Processing and Devices written by D. Harame and published by The Electrochemical Society. This book was released on 2010-10 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Download or read book Technology Computer Aided Design for Si SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Download or read book Nanoscience written by Claire Dupas and published by Springer Science & Business Media. This book was released on 2007-02-13 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practically-oriented overview of nanotechnologies and nanosciences is designed to provide students and researchers with essential information on both the tools of manufacture and specific features of the nanometric scale. Specific applications and techniques covered include nanolithography, STM and AFM, nanowires and supramolecules, molecular electronics, pptronics, and simulation. Each section devotes space to industrial applications and prospective developments. The book provides the only pedagogical review on major nanosciences topics at this level.

Download or read book High Speed and Lower Power Technologies written by Jung Han Choi and published by CRC Press. This book was released on 2018-09-03 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores up-to-date research trends and achievements on low-power and high-speed technologies in both electronics and optics. It offers unique insight into low-power and high-speed approaches ranging from devices, ICs, sub-systems and networks that can be exploited for future mobile devices, 5G networks, Internet of Things (IoT), and data centers. It collects heterogeneous topics in place to catch and predict future research directions of devices, circuits, subsystems, and networks for low-power and higher-speed technologies. Even it handles about artificial intelligence (AI) showing examples how AI technology can be combined with concurrent electronics. Written by top international experts in both industry and academia, the book discusses new devices, such as Si-on-chip laser, interconnections using graphenes, machine learning combined with CMOS technology, progresses of SiGe devices for higher-speed electronices for optic, co-design low-power and high-speed circuits for optical interconnect, low-power network-on-chip (NoC) router, X-ray quantum counting, and a design of low-power power amplifiers. Covers modern high-speed and low-power electronics and photonics. Discusses novel nano-devices, electronics & photonic sub-systems for high-speed and low-power systems, and many other emerging technologies like Si photonic technology, Si-on-chip laser, low-power driver for optic device, and network-on-chip router. Includes practical applications and recent results with respect to emerging low-power systems. Addresses the future perspective of silicon photonics as a low-power interconnections and communication applications.

Download or read book Frontiers In Electronics Future Chips Proceedings Of The 2002 Workshop On Frontiers In Electronics Wofe 02 written by Yoon Soo Park and published by World Scientific. This book was released on 2003-01-29 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.

Download or read book International Conference on Intelligent Computing and Smart Communication 2019 written by Geetam Singh Tomar and published by Springer Nature. This book was released on 2020-01-07 with total page 1635 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers high-quality research papers presented at the First International Conference, ICSC 2019, organised by THDC Institute of Hydropower Engineering and Technology, Tehri, India, from 20 to 21 April 2019. The book is divided into two major sections – Intelligent Computing and Smart Communication. Some of the areas covered are Parallel and Distributed Systems, Web Services, Databases and Data Mining Applications, Feature Selection and Feature Extraction, High-Performance Data Mining Algorithms, Knowledge Discovery, Communication Protocols and Architectures, High-speed Communication, High-Voltage Insulation Technologies, Fault Detection and Protection, Power System Analysis, Embedded Systems, Architectures, Electronics in Renewable Energy, CAD for VLSI, Green Electronics, Signal and Image Processing, Pattern Recognition and Analysis, Multi-Resolution Analysis and Wavelets, 3D and Stereo Imaging, and Neural Networks.

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.