Download or read book Antimony based Type II Superlattice Infrared Photodetectors on Indium arsenide Substrates written by Daniel Y. Zuo and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.

Download or read book Characterization of Antimony based Type II Superlattice Infrared Photodetectors written by Qi Lou and published by . This book was released on 2007 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Theory and Experiment of Antimony based Type II Superlattice Infrared Photodetectors written by Shin Mou and published by ProQuest. This book was released on 2007 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is currently considerable interest in InAs/InGaSb type-II superlattices because of their broken-gap type-II band alignment, which forms spatially indirect band gaps in the range of 3--30 mum. Combining the advantages of III-V epitaxial growth techniques and high sensitivity to normal incident light, the InAs/InGaSb superlattice is a promising material system for the next generation of mid-infrared photodetector focal plane arrays (FPAs). In order to understand the underlying physics and to improve the device performance of this emerging technique, InAs/InGaSb superlattice photodetectors are studied theoretically and experimentally in this dissertation. First, an eight-band k · p method is developed to model the band structures and absorption coefficient. The calculated absorption coefficient spectra agree very well with our experimental curves, validating the effectiveness of the eight-band k · p method. Second, quantum efficiency (QE), an important figure of merit for infrared photodetectors, is analyzed by an analytical model based on absorption coefficient and transport parameters (e.g., minority carrier diffusion length) obtained by electron beam induced current (EBIC) technique. By successfully modeling the QE of InAs/GaSb superlattice photodiodes, we ensure that the depletion region in InAs/GaSb superlattice photodiodes is effective in collecting the photoexcited carriers. Understanding the dark current mechanisms of InAs/GaSb superlattice photodiodes is another important task when the surface leakage current is detrimental. We use an analytical model, which explains successfully the measured I-V curves. With the observation of a sinh(qV/4KT) dependence under small forward bias, a surface channel current model originally developed by Sah is used to explain the surface leakage current of InAs/GaSb superlattice photodiodes for the first time. Besides the conventional photodiodes, we take advantage of the InAs-(In)GaSb-Al(In)Sb nearly lattice-matched system to design novel antimony-based type-II photodetectors based on our eight-band k · p method. After interband cascade detectors with promising room temperature performance (dynamic impedance and area product (R0A) equals to 22 Ocm2 at 300 K) are obtained, a new design for interband tunneling detectors is introduced. With a thicker active region, the QE of interband tunneling detectors is improved more than five times compared to that of interband cascade detectors.

Download or read book Antimony based Type II Superlattice Infrared Detectors written by Martin Mandl and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Numerous applications within the mid- and long-wavelength infrared are driving the search for efficient and cost effective detection technologies in this regime. Theoretical calculations have predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II superlattice infrared detectors. Standard UV-based photolithography was used combined with chemical wet or dry etching techniques in order to fabricate antinomy-based type-II superlattice infrared detectors. Subsequently, Fourier transform infrared spectroscopy and radiometric techniques were applied for optical characterization in order to obtain a detector's spectrum and response, as well as the overall detectivity in combination with electrical characterization. Temperature dependent electrical characterization was used to extract information about the limiting dark current processes. This work resulted in the first demonstration of an InAs/GaSb type-II superlattice infrared photodetector grown by metalorganic chemical vapor deposition. A peak detectivity of 1.6x10^9 Jones at 78 K was achieved for this device with a 11 micrometer zero cutoff wavelength. Furthermore the interband tunneling detector designed for the mid-wavelength infrared regime was studied. Similar results to those previously published were obtained.

Download or read book Fundamental Research on Infrared Detection written by and published by . This book was released on 2006 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamental research issues on infrared photodetectors are reported. These include the following: Task 1. HgCdTe (MCT) defect study Continuing the research on degradation of MCT, we explore the size changing of the dislocation loops and the effect of low-dose electron beam irradiation during TEM analysis. Self-energy correction is included to calculate the MCT defect states. For the photoluminescence image, we correlate the PL images from MCTs and their CZT substrates. Task 2. Antimony-based type-II superlattice (T2-SL) photodetectors We explored the temperature dependent and noise current characteristics of interband cascade detectors (ICDs). We also acquired type-II superlattice photodiodes from Jet Propulsion Lab and obtained a high detectivity of 5.23x1010 cmHz1/2/W at 77 K with devices of 10.5 m cutoff wavelength. Moreover, MOCVD growth of InAs/GaSb type-II superlattices was explored with substrates of both GaSb and GaAs. Task 3. Quantum dot infrared photodetectors (QDIPs) Our work has been focused on the growth and fabrication of high performance QDIP devices based on technologies developed. Defect-free 100-period InAs QD structure has been demonstrated. For InAs QDIPs grown on InP substrates by molecular beam epitaxy (MBE), peak detectivity of 2.1x109 cmHz1/2/W was achieved at a bias voltage of 0.8V.

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Strain balanced InAs InAsSb Type II Superlattices on GaSb Substrates for Infrared Photodetector Applications written by Elizabeth H. Steenbergen and published by . This book was released on 2012 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared photodetectors, used in applications for sensing and imaging, such as military target recognition, chemical/gas detection, and night vision enhancement, are predominantly comprised of an expensive II-VI material, HgCdTe. III-V type-II superlattices (SLs) have been studied as viable alternatives for HgCdTe due to the SL advantages over HgCdTe: greater control of the alloy composition, resulting in more uniform materials and cutoff wavelengths across the wafer; stronger bonds and structural stability; less expensive substrates, i.e., GaSb; mature III-V growth and processing technologies; lower band-to-band tunneling due to larger electron effective masses; and reduced Auger recombination enabling operation at higher temperatures and longer wavelengths. However, the dark current of InAs/Ga1-xInxSb SL detectors is higher than that of HgCdTe detectors and limited by Shockley-Read-Hall (SRH) recombination rather than Auger recombination. This dissertation work focuses on InAs/InAs1-xSbx SLs, another promising alternative for infrared laser and detector applications due to possible lower SRH recombination and the absence of gallium, which simplifies the SL interfaces and growth processes. InAs/InAs1-xSbx SLs strain-balanced to GaSb substrates were designed for the mid- and long-wavelength infrared (MWIR and LWIR) spectral ranges and were grown using MOCVD and MBE by various groups. Detailed characterization using high-resolution x-ray diffraction, atomic force microscopy, photoluminescence (PL), and photoconductance revealed the excellent structural and optical properties of the MBE materials. Two key material parameters were studied in detail: the valence band offset (VBO) and minority carrier lifetime. The VBO between InAs and InAs1-xSbx strained on GaSb with x = 0.28 - 0.41 was best described by Qv = ÄEv/ÄEg = 1.75 ± 0.03. Time-resolved PL experiments on a LWIR SL revealed a lifetime of 412 ns at 77 K, one order of magnitude greater than that of InAs/Ga1-xInxSb LWIR SLs due to less SRH recombination. MWIR SLs also had 100's of ns lifetimes that were dominated by radiative recombination due to shorter periods and larger wave function overlaps. These results allow InAs/InAs1-xSbx SLs to be designed for LWIR photodetectors with minority carrier lifetimes approaching those of HgCdTe, lower dark currents, and higher operating temperatures.

Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1989 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Infrared and Terahertz Detectors Third Edition written by Antoni Rogalski and published by CRC Press. This book was released on 2019-01-10 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.

Download or read book The Group 13 Metals Aluminium Gallium Indium and Thallium written by Simon Aldridge and published by John Wiley & Sons. This book was released on 2011-02-10 with total page 990 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last two decades have seen a renaissance in interest in the chemistry of the main group elements. In particular research on the metals of group 13 (aluminium, gallium, indium and thallium) has led to the synthesis and isolation of some very novel and unusual molecules, with implications for organometallic synthesis, new materials development, and with biological, medical and, environmental relevance. The Group 13 Metals Aluminium, Gallium, Indium and Thallium aims to cover new facts, developments and applications in the context of more general patterns of physical and chemical behaviour. Particular attention is paid to the main growth areas, including the chemistry of lower formal oxidation states, cluster chemistry, the investigation of solid oxides and hydroxides, advances in the formation of III-V and related compounds, the biological significance of Group 13 metal complexes, and the growing importance of the metals and their compounds in the mediation of organic reactions. Chapters cover: general features of the group 13 elements group 13 metals in the +3 oxidation state: simple inorganic compounds formal oxidation state +3: organometallic chemistry formal oxidation state +2: metal-metal bonded vs. mononuclear derivatives group 13 metals in the +1 oxidation state mixed or intermediate valence group 13 metal compounds aluminium and gallium clusters: metalloid clusters and their relation to the bulk phases, to naked clusters, and to nanoscaled materials simple and mixed metal oxides and hydroxides: solids with extended structures of different dimensionalities and porosities coordination and solution chemistry of the metals: biological, medical and, environmental relevance III-V and related semiconductor materials group 13 metal-mediated organic reactions The Group 13 Metals Aluminium, Gallium, Indium and Thallium provides a detailed, wide-ranging, and up-to-date review of the chemistry of this important group of metals. It will find a place on the bookshelves of practitioners, researchers and students working in inorganic, organometallic, and materials chemistry.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 946 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays Physics and Applications written by Sheng S. Li and published by The Electrochemical Society. This book was released on 1999 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Antimonide based Infrared Detectors written by Antoni Rogalski and published by . This book was released on 2018 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--

Download or read book Expanding the Vision of Sensor Materials written by Committee on New Sensor Technologies: Materials and Applications and published by National Academies Press. This book was released on 1995-07-06 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in materials science and engineering have paved the way for the development of new and more capable sensors. Drawing upon case studies from manufacturing and structural monitoring and involving chemical and long wave-length infrared sensors, this book suggests an approach that frames the relevant technical issues in such a way as to expedite the consideration of new and novel sensor materials. It enables a multidisciplinary approach for identifying opportunities and making realistic assessments of technical risk and could be used to guide relevant research and development in sensor technologies.

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un