Download or read book A Three Region Analytical Model for Short Channel Silicon Carbide SiC MESFET s written by Rahul Reddy Kambalapally and published by . This book was released on 2013 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents an improved analytical model of the three regions in a SiC metal semiconductor field effect transistor(MESFET). The analytical model mainly focuses on two regions in the active channel that are between gate-source and drain-source. The third region gate-drain (which is ungated) is ignored in this analytical model due to the very large potential drop at high drain voltages in a short channel device. In order to improve the accuracy in this model, the parasitic resistance and incomplete ionization of dopants have been incorporated. Considering these effects in the analytical model, a simulation of the current and voltage characteristics and transfer characteristics of the Silicon Carbide MESFET has been developed and discussed in detailed in this thesis.
Download or read book Analytical Modeling of 4H silicon Carbide Based MESFET with Trapping Effects written by Chirayu Shah and published by . This book was released on 2017 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide metal semiconductor effect transistor has a massive possible popular high-power device at microwave frequencies because of their extensive band-gap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based analytical model of Silicon Carbide based MESFETs has been developed considering high-purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been evaluated to understand the power aided efficiency and frequency performance.
Download or read book Physics based Analytical Model for Silicon Carbide MESFET with a New Concept of Charge Conserving Capacitance written by Kiran Kumar Rambappagari and published by . This book was released on 2013 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Download or read book Modeling Nanowire and Double Gate Junctionless Field Effect Transistors written by Farzan Jazaeri and published by Cambridge University Press. This book was released on 2018-03 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Download or read book Silicon Carbide SiC Based MESFET Similation for High Power and High Frequency Performance Using MATLAB written by Bhavik Patel and published by . This book was released on 2015 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Simulation of SiC MESFET Using Synopsys Technology Computer aided Design written by Siddharth Nirmal and published by . This book was released on 2011 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of Silicon Carbide Metal semiconductor Field effect Transistors for Microwave Power Applications written by Ho-Young Cha and published by . This book was released on 2004 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Characterization Modeling and Analysis of High Voltage Silicon Carbide Power Devices written by Jun Wang and published by . This book was released on 2010 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: emitter turn-off thyristor (ETO), insulated gate bipolar transistor (IGBT), Silicon carbide (SiC), metal-oxide-semiconductor field effect transistor, solid-state transformer (SST).
Download or read book A Three dimensional Analytical Model for Small geometry Metal Oxide Semiconductor Field Effect Transistor written by Mohammed Jameel Alawi and published by . This book was released on 2000 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analytical Modeling of Silicon Carbide Metal Semiconductor Field Effect Transistor written by Balasubramaniyam Keelapudi and published by . This book was released on 2012 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study concentrates on analytical modeling of a silicon carbide MESFET device using MATH Lab software.
Download or read book Simulation and Modeling of Emerging Devices written by Brinda Bhowmick and published by Cambridge Scholars Publishing. This book was released on 2023-05-10 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Design Simulation and Fabrication of Silicon Carbide Metal Semiconductor Field Effect Transistors written by Chunlin Zhu and published by . This book was released on 2007 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analytical Model of Threshold Voltage for Narrow Width Metal Oxide Semiconductor Field Effect Transistor written by Hiren P. Upadhyay and published by . This book was released on 1996 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Power MOSFET Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-06-26 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Download or read book Programme and The Book of Abstracts Ninth Annual Conference YUCOMAT 2007 written by Dragan P. Uskoković and published by Institute of Technical Sciences of SASA. This book was released on 2007-08-01 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: The First Conference on materials science and engineering, including physics, physical chemistry, condensed matter chemistry, and technology in general, was held in September 1995, in Herceg Novi. An initiative to establish Yugoslav Materials Research Society was born at the conference and, similar to other MR societies in the world, the programme was made and objectives determined. The Yugoslav Materials Research Society (Yu-MRS), a nongovernment and non-profit scientific association, was founded in 1997 to promote multidisciplinary goal-oriented research in materials science and engineering. The main task and objective of the Society has been to encourage creativity in materials research and engineering to reach a harmonic coordination between achievements in this field in our country and analogous activities in the world with an aim to include our country into global international projects. Until 2003, Conferences were held every second year and then they grew into Annual Conferences that were traditionally held in Herceg Novi in September of every year. In 2007 Yu-MRS formed two new MRS: MRS-Serbia (official successor of Yu-MRS) and MRS-Montenegro (in founding). In 2008, MRS тАУ Serbia became a member of FEMS (Federation of European Materials Societies).
