Download or read book Analysis of the Redistribution of Boron in Silicon During a Thermal Oxidation Governed by a Linear parabolic Growth Law written by Lawrence Alan Hall and published by . This book was released on 1973 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1986 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1972 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bibliography on the High Temperature Chemistry and Physics of Materials written by and published by . This book was released on 1974 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Dissertation Index written by and published by . This book was released on 1984 with total page 890 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book NBS Special Publication written by and published by . This book was released on 1970 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bibliography on the High Temperature Chemistry and Physics of Materials written by and published by . This book was released on 1974 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Oxide Studies written by Charles Pang-Hsin Ho and published by . This book was released on 1978 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Oxidation of Silicon written by Michael Newton Mark Strudwick and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book National Union Catalog written by and published by . This book was released on 1978 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Redistribution of Boron Diffused in Silicon at Low Surface Concentration written by John Manning Wehrung and published by . This book was released on 1969 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Redistribution of Boron in Silicon After Two Oxidation Steps Used in M O S T Fabrication written by S. Margalit and published by . This book was released on 1971 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Encyclopedia of Microfluidics and Nanofluidics written by Dongqing Li and published by Springer Science & Business Media. This book was released on 2008-08-06 with total page 2242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.
Download or read book New Results on Low Temperature Thermal Oxidation of Silicon written by E. A. Irene and published by . This book was released on 1986 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: The commonly accepted linear-parabolic oxidation model for the thermal oxidation of Si includes two rate processes in a steady state: reaction between Si and oxidant at the Si-Si02 interface; and transport of oxidant through the Si02 film. Based on available data, it is argued that the former process seems dominant for thin film growth in dry 02. A number of measured Si02 film and Si-Si02 interface measured properties are reported, as well as the variation of these properties with oxidation temperature and Si substrate orientation. These properties include; refractive index, density, intrinsic stress, interface fixed oxide charge and interface trapped charge. It is also observed that all of these properties display similar oxidation temperature and inert anneal behavior plus a complex orientation dependence. Through the use of a modified form for the interface reaction, a better understanding is obtained of both the origin of these measured properties, and new oxidation data taken on five Si orientations and at lower oxidation temperatures than previously reported.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Oxidation of Silicon New Experimental Results and Models written by Eugene A. Irene and published by . This book was released on 1987 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most studies of Silicon oxidation commence with a discussion of the Linear-Parabolic oxidation model developed by a number of workers in the 1960's. The limits of the model are pure diffusion of oxidant for thick Silicon dioxide films and a surface reaction limitation for thin films. The steady state picture of this series reaction scheme is discussed and used to explain new experimental results. New data relevant to Si oxidation is presented on the following subjects: five orientations of Si; photonic excitement; intrinsic film stress; silicide oxidation. The role of electrons on the oxidation kinetics is elucidated. A thermionic emission model for th initial stages of oxidation is proposed.
