Download or read book Analysis of Semiconductor Structures by Nuclear and Electrical Techniques written by Sylvanus S. Lau and published by . This book was released on 1975 with total page 43 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents three studies of thin film reactions between metal films and Si. In these studies MeV He ion backscattering spectrometry, Auger electron spectroscopy, secondary electron microscopy and glancing angle x-ray diffraction are used as the principal tools of analysis. (1) At temperatures well below the Si-Al eutectic (577C), fine grained polycrystalline Si in contact with Al films recrystallizes in the Al matrix. The recrystallization can be deferred or suppressed by placing a buffer layer of V or Ti between the Al film and poly Si. (2) When annealing Pt films deposited on Si in an O2 ambient the formation of PtSi does not consume all the Pt. The top layer of Pt is separated from the underlying PtSi by a thin SiO2 layer. (3) The formation of Ni silicide depends on the structural characteristics of the Si substrate. The growth of the silicide (Ni2Si) initially formed is faster on 100 and poly Si than on 111 Si. For Ni on amorphous Si, NiSi also appears.
Download or read book Analysis of Semiconductor Structures by Nuclear and Electrical Techniques written by Joseph M. Harris and published by . This book was released on 1977 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: MeV backscattering spectrometry and x-ray diffraction are used to investigate the behavior of sputter-deposited Ti-W mixed films on Si Substrates. During vacuum anneals at temperatures of 700 C for several hours, the metallization layer reacts with the substrate. Backscattering analysis shows that the resulting compound layer is uniform in composition and contains Ti, W and Si. The Ti:W ratio in the compound corresponds to that of the deposited metal film. X-ray analyses with Read and Guinier cameras reveal the presence of the ternary Ti(x)W(1-x)Si2 compound. Its composition is unaffected by oxygen contamination during anneal, but the reaction rate is affected. The rate measured on samples with about 15% oxygen contamination is linear, of the order of 0.5 A/sec at 725 C, and depends on the crystallographic orientation of the substrate and the d-c bias during sputter deposition of the Ti-W film.
Download or read book Analysis of Semiconductor Structures by Nuclear and Electrical Techniques Silicide Formation written by Robert W. Bower and published by . This book was released on 1974 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report presents three studies of silicide formation in systems composed of single crystal silicon overlaid with a metal film. Common to all this work is the use of MeV He ion backscattering and glancing angle x-ray diffraction as the principal analytical tools. Backscattering data gives composition as a function of depth and hence can be used to determine growth kinetics while x-ray diffraction gives identification of phases and structural information. Work is reported in the following areas: Implanted noble gas atoms as diffusion markers in silicide formation; Structure and growth kinetics of Ni2Si on silicon; Iron silicide thin film formation at low temperatures.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1974 with total page 948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1974 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1978-02 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Conference Record of the Thirteenth IEEE Photovoltaic Specialists Conference 1978 written by and published by . This book was released on 1978 with total page 1448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Index written by and published by . This book was released on 1975 with total page 1076 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Grants and Awards for the Fiscal Year Ended written by National Science Foundation (U.S.) and published by . This book was released on 1979 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book R D Abstracts written by Technology Reports Centre (Great Britain) and published by . This book was released on 1976 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements written by and published by . This book was released on 1975-07-25 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1975 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Annual Index written by and published by . This book was released on 1978 with total page 1064 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solid State Technology written by and published by . This book was released on 1978 with total page 1268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Download or read book Planseeberichte F r Pulvermetallurgie written by and published by . This book was released on 1978 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
