Download or read book Analysis of Cu Difusion in ZnTe Based Contacts for Thin Film CdS CdTe Solar Cells written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Nimetallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 deg. C to 300 deg. C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cuat the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.
Download or read book Analysis of Cu Diffusion in ZnTe Based Contacts for Thin Film CdS written by and published by . This book was released on 1998 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 C to 300 C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.
Download or read book Effects of Cu Diffusion from ZnTe Cu Ti Contacts on Carrier Lifetime of CdS CdTe Thin Film Solar Cells written by and published by . This book was released on 2008 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Cu Diffusion From ZnTe written by and published by . This book was released on 2008 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Thin Film CdTe Solar Cells written by Darshini Desai and published by . This book was released on 2007 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic device modeling results obtained using AMPS (Analysis of microelectronic and photonic structures) suggest that the dominant recombination mechanism is the SRH recombination through midgap states.
Download or read book SIMS Analysis of Cu in ZnTe based Back Contacts for CdTe CdS Solar Cells written by Chitra Narayanswamy and published by . This book was released on 1999 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of the ZnTe CU Contact on CdS CdTe Solar Cells written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of the ZnTe written by M. J. Romero and published by . This book was released on 2003 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on the recent use of cathodoluminescence (CL) to probe the depth-dependent changes in radiative recombination that occur in CdTe devices during ZnTe:Cu contacting procedures. These types of CL measurements may be useful to assist in linking impurity diffusion (e.g., Cu) from the contact with depth-dependent variation in electrical activation within the CdTe layer. Variable-energy CL suggests that diffusion from the ZnTe:Cu contact interface may assist in reducing donors levels in the CdTe bulk, and thereby yield p-type material in the region near the contact. CL analysis near abrupt metal discontinuities provides estimates of diffusion lengths for carriers associated with both excitonic and donor-to-acceptor pair recombination. Finally, CL measurements at increasing excitation levels (i.e., increasing electron-beam current) provides estimates of the defect state density, as well as providing evidence that discrete multiple defect bands may exist in CdTe prior to contacting.
Download or read book Formation of ZnTe written by and published by . This book was released on 2006 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of (almost equal to)360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of (almost equal to)
Download or read book Electrical Characterization of Cu Composition Effects in CdS CdTe Thin Film Solar Cells with a ZnTe Cu Back Contact Preprint written by and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at0.55 eV whose concentration is significant when the Cu concentration ishigh. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.
Download or read book Evolution of CdS CdTe Device Performance During Cu Diffusion written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Cu Composition Effects in CdS CdTe Thin Film Solar Cells with a ZnTe written by and published by . This book was released on 2012 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at ≈0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.
Download or read book Formation of ZnTe Cu Ti Contacts at High Temperature for CdS CdTe Devices written by and published by . This book was released on 2006 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of ~360°C. ... performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.
Download or read book NCPV Photovoltaics Program Review written by National Center for Photovoltaics (U.S.) and published by American Institute of Physics. This book was released on 1999-03-12 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings volume compiles 123 papers that were presented orally or as posters at the National Center for Photovoltaics (NCPV) Program Review Meeting, held in Denver, Colorado, on September 8-11, 1998. The purpose of this meeting was to highlight the advances made in various areas of photovoltaics by and through the NCPV during the period of December 1997 to September 1998. Topics covered ranged from research in crystalline silicon and thin-film technologies, to manufacturing of photovoltaic modules, to applications of and markets for photovoltaic products.
Download or read book Molecular Dynamics Study of Poly and Monocrystalline CdS CdTe Junctions and Cu Doped ZnTe Back Contacts for Solar Cell Applications written by Rodolfo Aguirre (II) and published by . This book was released on 2017 with total page 59 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of Materials and Structures for P type Contacts in CdTe Solar Cells written by Dino Ferizovic and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The contact performance of Cu2Te thin films was comparable to that of CdTe/ZnTe superlattices and both demonstrated an advantage over contacts based on ZnTe:N thin films which were used a standard.
Download or read book Study Of Cu Free Back Contacts to Thin Film CdTe Solar Cells written by Vijay Viswanathan and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.
