Download or read book Analysis and Numerical Simulation of Current Filamentation in Power Semiconductor Devices written by Klas Lilja and published by . This book was released on 1993 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: "In this thesis the current filamentation phenomenon in thyristors and bipolar power transistors is investigated by means of modeling and numerical simulation. Current filmanetation is an instability leading to a concentration of the current to a small spot in a device, a filament. It limits performance and can lead to device destruction. The main emphasis of the investigation is given to thyristors with turn-off capability (GTO, MCT) and several remedies to the filamentation problem, including a completely new device structure, are proposed and analyzed."--Back cover.
Download or read book Physical Limitations of Semiconductor Devices written by Vladislav A. Vashchenko and published by Springer. This book was released on 2010-10-27 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
Download or read book Power Semiconductor Devices and Circuits written by A.A. Jaecklin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: This symposium was the sCientific-technical event of the centennial celebration of the Asea Brown Boveri Switzerland. The purpose was to assess the present state of the art as well as shaping the basis for future progress in the area of power devices and related power circuits. The merger of Brown Boveri (BBC) with Asea to Asea Brown Boveri (ABB) three years ago gave new stimulus and enriched the technical substance of the symposium. By 1991, 100 years after the formation of BBC in Switzerland as a single company, this organization has been decentralized, forming 35 independent ABB companies. One of them - ABB Semiconductors Ltd. - directly deals with the power semiconductor business. These significant changes reflect the changes in the market place: increased competition and higher customer expectations have to be fulfilled. In line with the core business activities of ABB and with the concept of sustainable development, it is natural for ABB to be active in the area of power devices and circuits. Increased awareness towards energy conservation is one of the main drives for these activities. User friendliness is another drive: integration of intelligent functions, e.g. protection and/or increased direct computer interfacing of the power circuits. Therefore, also the R&D activities related to the subject of thIs symposium will in the future be characterized by an even stronger coupling with the market needs. For the members of the R&D Laboratories this means improved customer partnership beyond operational excellence.
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer. This book was released on 1993 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physical Limitations of Semiconductor Devices written by Vladislav A. Vashchenko and published by Springer Science & Business Media. This book was released on 2008-03-22 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
Download or read book Numerical Simulation of Multilayered Thyristor like Semiconductor Devices written by Valeri Korobov and published by . This book was released on 1998 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Simulation of Advanced Semiconductor Devices written by Mike Gault and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Simulation of Advanced Semiconductor Devices written by Mike Gault and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Two dimensional Numerical Simulation of Semiconductor Devices Using Finite difference Method written by Milind R. Gokhale and published by . This book was released on 1992 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Computationally Efficient Unified Approach to the Numerical Analysis of the Sensitivity and Noise of Semiconductor Devices written by and published by . This book was released on 1903 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors present a computationally efficient unified approach to the numerical simulation of sensitivity and noise in majority-carrier semiconductor devices that is based on the extension to device simulation of the adjoint method for sensitivity and noise analysis of electrical networks. Sensitivity and device noise analysis based on physical models are shown to have a common background, since they amount to evaluating the small-signal device response to an impressed, distributed current source. This problem is addressed by means of a Green's function technique akin to Shockley's impedance field method. To allow the efficient numerical evaluation of the Green's function within the framework of a discretized physical model, inter-reciprocity concepts, based on the introduction of an adjoint device, are exploited. Examples of implementation involving GaAs MESFETs are discussed.
Download or read book Numerical Simulation of Semiconductor Devices written by Ansgar Jüngel and published by . This book was released on 1998 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Simulation of Semiconductor Devices Using Hydrodynamic Model with Different Upwind Flux Splitting Schemes written by Wai Kay Yip and published by . This book was released on 2002 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient One dimensional Numerical Analysis of Biopolar Power Semiconductor Devices written by C. Christiaan Abbas and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Simulations of Semiconductor Devices by Streamline Diffusion Methods written by Xunlei Jiang and published by . This book was released on 1995 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "Theoretical and practical aspects of the design and implementation of the streamline-diffusion (SD) method for semiconductor device models are explored systematically. Emphasis is placed on the hydrodynamic (HD) model, which is computationally more challenging than the drift-diffusion (DD) model, but provides some important physical information missing in the DD model. We devise a non-symmetric SD method for device simulations. This numerical method is uniformly used for the HD model (including a proposed simplification (SHD)) and the DD model. An appropriate SD operator is derived for the general non-symmetric convection-diffusion system. Linear stability analysis shows that our proposed numerical method is stable if the system can be symmetrized. Stability arguments and numerical experiments also suggest that the combination of the method of lines and the semidiscrete SD method may not be appropriate for the transient problem, a fact which often has been ignored in the literature. An efficient method, consistent with the SD method used for conservation laws, is developed for the potential equation. The method produces a more accurate electric field than the conventional Galerkin method. Moreover, it solves for the potential and electric field in a decoupled manner. We apply our numerical method to the diode and MESFET devices. Shocks for the diode in one and two space dimensions and the electron depletion near the gate for the MESFET in two space dimensions are simulated. Model comparisons are implemented. We observe that the difference in solutions between the HD and DD models is significant. The solution discrepancy between the full HD and SHD models is almost negligible in MESFET simulation, as in many other engineering applications. However, an exceptional case is found in our experiments."
Download or read book Numerical Simulation of Semiconductor Devices for Very Large Scale Integrated Circuits written by IEEE Electron Devices Society and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Cumulative Book Index written by and published by . This book was released on 1995 with total page 2266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
