Download or read book Analysis and Characterization of GaAs MOSFET with High K Dielectric Material written by Krupal Pawar and published by GRIN Verlag. This book was released on 2015-02-11 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scientific Essay from the year 2015 in the subject Engineering - Communication Technology, , course: VLSI Technology, language: English, abstract: Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20€0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.

Download or read book High k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Download or read book Materials Fundamentals of Gate Dielectrics written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2006-05-24 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.

Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Proceedings of the Fourth International Conference on Microelectronics Computing and Communication Systems written by Vijay Nath and published by Springer Nature. This book was released on 2020-09-19 with total page 1078 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents high-quality papers from the Fourth International Conference on Microelectronics, Computing & Communication Systems (MCCS 2019). It discusses the latest technological trends and advances in MEMS and nanoelectronics, wireless communication, optical communication, instrumentation, signal processing, image processing, bioengineering, green energy, hybrid vehicles, environmental science, weather forecasting, cloud computing, renewable energy, RFID, CMOS sensors, actuators, transducers, telemetry systems, embedded systems and sensor network applications. It includes papers based on original theoretical, practical and experimental simulations, development, applications, measurements and testing. The applications and solutions discussed here provide excellent reference material for future product development.

Download or read book In Situ Characterization of Thin Film Growth written by Gertjan Koster and published by Elsevier. This book was released on 2011-10-05 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. - Chapters review electron diffraction techniques, including the methodology for observations and measurements - Discusses the principles and applications of photoemission techniques - Examines alternative in situ characterisation techniques

Download or read book High k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Download or read book Metals Abstracts written by and published by . This book was released on 1992 with total page 1516 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

Download or read book Recent Advances in Nanophotonics written by Mojtaba Kahrizi and published by BoD – Books on Demand. This book was released on 2020-11-26 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume brings together several recent research articles in the field of nanophotonics. The editors have arranged the chapters in three main parts: quantum devices, photonic devices, and semiconductor devices. The chapters cover a wide variety of scopes in those areas including principles of plasmonic, SPR, LSPR and their applications, graphene-based nanophotonic devices, generation of entangled photon and quantum dots, perovskite solar cells, photo-detachment and photoionization of two-electrons systems, diffusion and intermixing of atoms in semiconductor crystals, lattice and molecular elastic and inelastic scattering including surface-enhanced Raman Scattering and their applications. It is our sincerest hope that science and engineering students and researchers could benefit from the new ideas and recent advances in the field that are covered in this book.

Download or read book Micro Electronics and Telecommunication Engineering written by Devendra Kumar Sharma and published by Springer Nature. This book was released on 2021-05-28 with total page 627 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents selected papers from the 4th International Conference on Micro-Electronics and Telecommunication Engineering, held at SRM Institute of Science and Technology, Ghaziabad, India, during 26–27 September 2020. It covers a wide variety of topics in micro-electronics and telecommunication engineering, including micro-electronic engineering, computational remote sensing, computer science and intelligent systems, signal and image processing, and information and communication technology.

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Download or read book Advanced Gate Stacks for High Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.