Download or read book An Investigation of Gallium Arsenide Materials and Devices Grown on Silicon Substrates written by Russell Jon Fischer and published by . This book was released on 1986 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Electronics Materials and Devices A Strategic Study of Markets Technologies and Companies Worldwide 1999 2004 written by R. Szweda and published by Elsevier. This book was released on 2000-12-05 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book Thin films of gallium arsenide on low cost substrates written by Rockwell International. Electronics Research Center and published by . This book was released on 1979 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structural Investigations of the Nucleation and Growth of Gallium Arsenide on Silicon Substrates written by S. Jeffrey Rosner and published by . This book was released on 1987 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Materials for High Temperature Semiconductor Devices written by National Research Council and published by National Academies Press. This book was released on 1995-09-14 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.

Download or read book Gallium Arsenide and Aluminum Gallium Arsenide on Germanium and Silicon Substrates Grown by Molecular Beam Epitaxy for Device Applications written by Timothy Scott Henderson and published by . This book was released on 1985 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.

Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Download or read book Gallium Arsenide and Related Compounds 1993 Proceedings of the 20th INT Symposium 29 August 2 September 1993 Freiburg im Braunschweig Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.

Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.

Download or read book Silicon Germanium Materials and Devices A Market and Technology Overview to 2006 written by R. Szweda and published by Elsevier. This book was released on 2002-11-26 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Computerworld written by and published by . This book was released on 1986-04-14 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: For more than 40 years, Computerworld has been the leading source of technology news and information for IT influencers worldwide. Computerworld's award-winning Web site (Computerworld.com), twice-monthly publication, focused conference series and custom research form the hub of the world's largest global IT media network.

Download or read book Gallium Arsenide for Devices and Integrated Circuits written by Hugh Thomas and published by . This book was released on 1986 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Signal written by and published by . This book was released on 1990 with total page 1010 pages. Available in PDF, EPUB and Kindle. Book excerpt: