Download or read book An Investigation of Defects in Gallium Arsenide Using the DLTS Technique microform written by Yi Shi and published by National Library of Canada. This book was released on 1989 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep level Transient Spectroscopy Studies of Gallium Arsenide Aluminum Gallium Arsenide Heterostructures and Superlattices written by Paul Alan Martin and published by . This book was released on 1986 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of two projects. First, the feasibility of using deep-level transient spectroscopy (DLTS) to measure conduction band-edge discontinuities in GaAS-AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS. Deep-level transient spectroscopy is reviewed, as are theoretical and experimental attempts to predict and measure band offsets. A theory of electron capture into and emission out of quantum wells in response to pulsed bias is developed. DLTS studies of GaAs AlGaAs quantum-well structures are presented and compared with the results of previous studies of defects in MOCVD GaAs and AlGaAs. Emission of electrons out of the GaAs quantum well is observed, but at emission rates in excess of those predicted by thermionic emission or by phonon assisted tunneling. In the absence of a model for the emission process, meaningful data for band-edge discontinuities cannot be extracted from the measured emission rates. Further characterization of the emission process would be of great value in the development of devices based on heterojunction technology. Data are also presented from a DLTS study of defect states in GaAs - AlGaAs superlattices Doubling the layer thickness from 50 to 100 A resulted in a dramatic change in the defects observed. This is accounted for by the presence of a conducting miniband in one super-lattice and its absence in the other.
Download or read book An Investigation Into the Distribution and Properties of Defects in Gallium Arsenide written by L. Breivik and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of Deep Levels in Aluminum Gallium Arsenide gallium Arsenide Modulation doped Heterojunction Structures written by Anthony Joseph Valois and published by . This book was released on 1985 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Role of Defects in Sulfide passivated Gallium Arsenide Surfaces and Metal gallium Arsenide Schottky Barriers written by Tao Zhang and published by . This book was released on 1989 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of Silicon Nitride on Gallium Arsenide written by Thomas Raymond Ohnstein and published by . This book was released on 1982 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Vacancy Defects in Gallium Arsenide written by Rebecca Dora Mih and published by . This book was released on 1994 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book TEM Studies of Defects in Gallium Arsenide written by P. Kidd and published by . This book was released on 1983 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Contribution to the Study of Extended Defects in Gallium Arsenide and Related Compounds written by Bruno Charles De Cooman and published by . This book was released on 1987 with total page 990 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of Point Defects in Melt Grown and Heat Treated Gallium Arsenide for Particle Detectors written by S. J. Wilson and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Ion Implanted Gallium Arsenide Using Deep Level Transient Spectroscopy written by N. G. Emerson and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy written by Ding-Yuan Samuel Day and published by . This book was released on 1980 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deel levels in the GaAs-GaP system. Studies of typical DLTS systems using either the lock-in amplifier or the dual-channel boxcar averager are presented. The effects of non-zero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commercial capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of gold level in silicon are presented, along with calculated corrections. We find the correction to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach. A DLTS system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge is used employing the diode to be tested along with a dummy diode of similar characteristics. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems . It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77 K and 300 K.
Download or read book A Transmission Electron Microscope Investigation Of The Growth And Defects In Thin Films Of Gallium Arsenide written by Murphy Raymond James and published by . This book was released on 1962 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
- Author : Sheng S. Li
- Publisher :
- Release : 1987
- ISBN :
- Pages : 89 pages
Study of Grown in Defects and Transport Properties Versus Growth Parameters in III V Epitaxial Films
Download or read book Study of Grown in Defects and Transport Properties Versus Growth Parameters in III V Epitaxial Films written by Sheng S. Li and published by . This book was released on 1987 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigation on the nature of deep-level defects in Gallium Arsenide and Aluminum sub x Gallium sub 1-x Arsenide (e.g., EL2 and DX center) grown under the various conditions has been performed by; 1) modeling the physical origins of EL2 center in GaAs based on the kinetic reaction equations and the analysis of field-enhanced emission rate, 2) correlation of deep-level defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition to the various growth parameters, 3) determination of field enhanced thermal emission rate of deep-level defects by reverse-biased deep level transient spectroscopy, 4) study on the Be- and Sn- related complex defects in LPE grown Aluminum sub x Gallium sub 1-x Arsenide (0.2
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123559 Subjects: Gallium arsenide Silicon carbide Spectrum analysis Rapid thermal processing
Download or read book Studies on Electronical Properties of Defects in Silicon and Gallium Arsenide written by Mats Kleverman and published by . This book was released on 1985 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:
