Download or read book An Experimental and Theoretical Study of InGaP GaAs Double Heterojunction Bipolar Transistors written by Tae-Woo Lee and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study and Realization of InGaP GaAs collector Up Double Heterojunction Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of InGaP GaAs InGaP Composite Collector Double Heterojunction Bipolar Transistor and GaAs Delta doped Emitter Bipolar Junction Transistor written by Kim Luong Lew and published by . This book was released on 2004 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of GaInP GaAs Double Heterojunction Bipolar Transistors for Microwave Power Amplifier Applications written by Pin-Fan Chen and published by . This book was released on 2001 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reliability Study of InGaP GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.

Download or read book An Experimental Study of AlGaInP GaAs GaAs and GaInP AlGaAs GaInP Heterojunction Bipolar Transistors written by Beng Chye Lye and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study and Realization of InGaP written by Achim Henkel and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Download or read book Fabrication and Modeling of InGaP GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of III V Heterojunction Bipolar Transistors written by William Liu and published by Wiley-Interscience. This book was released on 1998-04-27 with total page 1312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The definitive hands-on guide to heterojunction bipolar transistors In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers. Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.

Download or read book Novel Applications of GaInP to GaAs Based Heterojunction Bipolar Transistors HBTs written by Shyh-Liang Fu and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analysis of Bias dependent Collector Delay in InGaP GaAs Heterojunction Bipolar Transistors written by Michael Leonard Hattendorf and published by . This book was released on 2000 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Device Design and Fabrication of InGaP GaAsSb GaAs DHBTs written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: (Uncorrected OCR) Abstract of thesis entitled Device Design and Fabrication of InGaP/GaAsSb/GaAs DHBTs submitted by Cheung Chi Chuen, Cecil for the degree of Master of Philosophy at the University of Hong Kong in December 2003 A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. A novel device structure is designed, fully strained pseudomorphic GaAsSb with different Sb (Antimony) compositions is used as the base layer and an InGaP layer is used as the emitter. Thus both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. Various aspects of device performance, including the IV characteristics, current gain, ideality factor, current transport mechanism, high frequency performances and the turn on voltage of the InGaP/GaAsSb/GaAs DHBT are investigated. The results indicate that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs. The thesis is organized into five chapters. Chapter One, an introductory chapter, defines the aim of the study. Chapter Two reviews the relevant literature and discusses the basic principle of the HBT device physics and the DC (direct current) and RF (radio-frequency) characteristics of the HBT devices. Chapter Three describes the device design and fabrication process in detail, and is illustrated with captioned diagrams. Chapter Four discusses and analyzes the experimental results, and is illustrated with appropriate graphs and tables. Chapter Five discusses the significance of the research in summary form, and suggests some practical ideas for future development.

Download or read book Implementation of a Test System for an InGaP GaAs Heterojunction Bipolar Transistor Reliability Study written by Michael Scott Griswold and published by . This book was released on 1999 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study and Realization of InGaP GaAs Collector up Double Heterojuntion Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Experimental Study of Al xGa0 52 xIn0 48P GaAs Heterojunction Bipolar Transistors written by H. K. Yow and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 2003 IEEE Conference on Electron Devices and Solid State Circuits written by and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 2003 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings from the 2003 IEEE Conference on Electron Devices and Solid-State Circuits.