Download or read book An Electron Microscopy Study of Some Metal semiconductor Interfaces written by C. J. Kiely and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Electron Microscope Study of Some Metal semiconductor Interfaces written by Christopher J. Kiely and published by . This book was released on 1986 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transmission Electron Microscopy Study of Some Metal semiconductor Bi crystals written by and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Microscopy of Interfaces in Metals and Alloys written by L.M Clarebrough and published by Routledge. This book was released on 2021-09-02 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron Microscopy of Interfaces in Metals and Alloys examines the structure of interfaces in metals and alloys using transmission electron microscopy. The book presents quantitative methods of analysis and reviews the most significant work on interface structure over the last 20 years. It provides the first book description of the methods used for quantitative identification of Burgers vectors of interfacial dislocations, including the geometric analysis of periodicities in interface structure and the comparison of experimental and theoretical electron micrographs. The book explores low- and high-angle grain boundaries and interphase interfaces between neighboring grains, emphasizing interfacial dislocations and rigid-body displacements to the structure and properties of interfaces. It also analyzes the use of two-beam images and diffraction patterns for analysis and studies n-beam lattice imaging. The book includes numerous worked examples of the analysis of the structure of grain boundaries and interphase interfaces, which are particularly useful to those who need to consider the nature of intercrystalline interfaces.

Download or read book Scanning Probe Microscopy written by Nikodem Tomczak and published by World Scientific. This book was released on 2011 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning Probe Microscopy (SPM) is the enabling tool for nano(bio)technology, which has opened new vistas in many interdisciplinary research areas. Concomitant with the developments in SPM instrumentation and techniques are new and previously unthought-of opportunities in materials nanofabrication and characterisation. In particular, the developments in addressing and manipulating matter at the level of single atoms or molecules, and studies of biological materials (e.g. live cells, or cell membranes) result in new and exciting discoveries. The rising importance of SPM demands a concise treatment in the form of a book which is accessible to interdisciplinary practitioners. This book highlights recent advances in the field of SPM with sufficient depth and breadth to provide an intellectually stimulating overview of the current state of the art. The book is based on a set of carefully selected original works from renowned contributors on topics that range from atom technology, scanning tunneling spectroscopy of self-assembled nanostructures, SPM probe fabrication, scanning force microscopy applications in biology and materials science down to the single molecule level, novel scanning probe techniques, and nanolithography. The variety of topics underlines the strong interdisciplinary character of SPM related research and the combined expertise of the contributors gives us a unique opportunity to discuss possible future trends in SPM related research. This makes the book not merely a collection of already published material but an enlightening insight into cutting edge research and global SPM research trends.

Download or read book Semiconductor Interfaces Formation and Properties written by Guy LeLay and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

Download or read book Ballistic electron emission microscopy BEEM written by Mario Prietsch and published by . This book was released on 1995 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Some Metal semiconductor Interfaces written by Colette Maani and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ballistic Electron Emission Microscopy BEEM Applied to Study the Electronic Structure of Metal Semiconductor Interfaces written by and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Microscopy of Semiconducting Materials and ULSI Devices written by Clive Hayzelden and published by . This book was released on 1998 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first symposium on electron microscopy and materials for ultra-large scale integration (ULSI) at the Society's meeting attracted 34 papers by contributors from Asia, North America, and Europe. They cover specimen preparation and defect analysis in semiconductor devices; metallization, silicides, and diffusion barriers; the advanced characterization of ULSI structures, and semiconductor epitaxy and heterostructures. Annotation copyrighted by Book News, Inc., Portland, OR

Download or read book Metal semiconductor Interfaces written by Akio Hiraki and published by IOS Press. This book was released on 1995 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Control of Semiconductor Interfaces written by I. Ohdomari and published by Elsevier. This book was released on 2017-05-03 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.

Download or read book Interfaces A Study of Grain Boundaries in Metals by Transmission Electron Microscopy written by W. A. T. Clark and published by . This book was released on 1976 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Schottky Barrier Formation at Metal quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy written by Cristian Alexandru Tivarus and published by . This book was released on 2005 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A number of possible near and long term semiconductor device technologies rely on abrupt metal-semiconductor interfaces with nm-dimensions, and with internal nm-scale inhomogeneity. It is therefore very important to be able probe the electronic properties of these buried interfaces with sub-10 nm resolution and to find out the impact of small-size effects on their transport properties. In our study we used Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling to quantify how small-size effects modify the energy barrier at metal/semiconductor quantum wells (QWs), formed by making Schottky contacts to cleaved edges of GaAs quantum wells. Our model semiconductor heterostructure is formed as a sequence of AlGaAs/GaAs/AlGaAs layers and contains a sequence of GaAs QWs with thickness between 1 and 15 nm. The Schottky barrier height (SBH) measurements as a function of QW thickness showed that the SBH value increases as the QW thickness is decreased, by up to 140 meV for a 1 nm thick QW. This is mostly due to a large quantum-confinement increase (200 meV for a 1nm QW), modified by smaller decreases due to environmental electric field effects. Our modeling gave excellent quantitative agreement with measurements for a wide range of QW thickness when both these effects are considered. In a separate study, the cleaved QW were used as nm-apertures to estimate the resolution of BEEM as a function of metal film thickness. We found that BEEM resolution degrades as the top metal film layer is made thicker, from 12 nm for a 4 nm thick Au layer, up to 22 nm for a 15 nm thick Au layer. Also presented is modeling of the electrostatic potential profile around charged threading dislocations (TD) in GaN, close to a metal-semiconductor interface, and its dependence on the energy of acceptor sites along the dislocation. We found that for energy values higher than 1.13 eV the near interface TD acceptors are completely filled right up to the interface. This results in a very large negative space charge and an increase in the local barrier height close to the TD core that should be observable by techniques such as BEEM.

Download or read book High Voltage high Resolution Studies of Metal and Semiconductor Interfaces written by and published by . This book was released on 1989 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of high resolution transmission electron microscopy to the study of homo- or hetero-phase interface structures requires specimens that meet stringent criteria. In some systems the necessary geometric imaging conditions are established naturally, thus greatly simplifying the analysis. This is illustrated for a diamond-hexagonal/diamond-cubic interface in deformed silicon, a [Sigma]99 tilt boundary in a pure aluminum bicrystal, and a germanium precipitate in an aluminum matrix. 13 refs., 5 figs.

Download or read book Analytical Electron Microscopy of Some Oxide metal Interfaces written by Ian Michael Reaney and published by . This book was released on 1989 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.