Download or read book An Analytical Model to Study the Scaling Capability of Deep Submicron Double Gate Gallium Nitride GaN MESFETs written by Srikanth Reddy Mareddy and published by . This book was released on 2015 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: A two dimensional (2-D) analytical model of a Gallium Nitride (GaN) metal-semiconductor field effect transistor (MESFET) has been developed to present the submicron double gate, and it is expected to reduce the short channel effects for deep submicron GaN-MESFET based low power applications. This model also includes the two dimensional Poisson's equation to accurately determine the electric field in the drain side and the effect of drain induced barrier lowering effect. This analytical model expects that threshold voltage is developed greatly when compared to single-gate GaN-MESFET. By simulating this analytical model using the device parameters and DC biasing conditions, this Double Gate GaN MESFET model can solve the critical problems like immunity of short channel effects of GaN based circuits for the low power applications.
Download or read book Analytical Model of Gallium Nitride Metal Semiconductor Field effect Transistors written by Uttam Raj Sali and published by . This book was released on 2014 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents an analytical model of Gallium Nitride (GaN) MESFETs (metal-semiconductor field effect transistors). There are two band structures modeled for GaN: a Zinc Blende crystal structure and a Wurtzite crystal structure. This model is based on the parameters chosen for the Wurtzite crystal structure. The channel conductance, saturation current, transconductance, charge under the gate, drain-to-gate and gate-to-source capacitance, cutoff frequency, characteristic switching time, power-delay product, and breakdown voltage are calculated in the analysis of this model. These results are verified by two-dimensional computer calculations that agree with the results of the computer analysis and experimental data for a 1-æm gate GaN MESFET. A stray gate-to-drain and gate-to-source capacitance defined a limitation on the gate length as greater than 0.1 æm for a GaN MESFET. In this project, computer analysis is compared with experimental data for GaN. A MATLAB tool is used to obtain the computer analysis. The simulation shows computer analysis for GaN in agreement with the experimental data for a GaN MESFET.
Download or read book On Scaling of an Ion Implanted Gallium Nitride Mesfet written by Anish Vemulapalli and published by . This book was released on 2016 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this grad project is to study the scaling effect of different electrical parameters of GaN base MESFET by using a physics based analytical model using simulated MATLAB. The device dimensions, doping concentration and fabrication parameters have been scaled to determine the scaling effect on the drain to source current, threshold voltage, cutoff frequency, time delay and dc output power. The purpose of this grad project also serves how the scaling effects the device parameters having a positive impact on device fabrication and also the anticipated scaling results may get saturated beyond some point of scaling in the device. The grad project incorporates the introduction in chapter one, GaN material in chapter two, MESFET physics in chapter three, scaling rules in chapter four, numerical equations in chapter five and results and discussion in chapter six.
Download or read book Device Characterization and Modeling of Large Size GaN HEMTs written by Jaime Alberto Zamudio Flores and published by kassel university press GmbH. This book was released on 2012-08-21 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Download or read book Analytical Model of Drain Induced Barrier Lowering Effect for Gallium Nitride GaN Metal Semiconductor Field effect Transistors written by Divakar Vedati and published by . This book was released on 2012 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: An analytical modeling of gallium nitride (GaN) MESFET has been developed to determine the behavior of drain induced barrier lowering (DIBL). The analytical model incorporates the threshold voltage for a short channel device on the L/a (channel length/channel depth) ratio. Drain applied voltage VDS and channel doping concentration ND is made, which provides a good basis for the short channel device and circuit design. The model also includes the two dimensional Poisson's equation to accurately determine the electric field in the drain side and the effect of DIBL. The DIBL model on MOS devices has been developed to understand the DIBL effect of short channel CMOS devices. So far no theoretical model has been developed for wide band gap MESFET devices. This analytical model will be beneficial for developing nano-meter scaled MESFET and MOSFET devices in future endeavors.
Download or read book Study of Analytical Determination of Parasitic Resistances in Gallium Nitride GaN Metal Semiconductor Field Effect Transistors written by Sandhya Jawagi and published by . This book was released on 2012 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, a physics based analytical model is proposed for a Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has been developed to extract the parasitic resistances and the result shows an accurate simulation to understand the intrinsic and extrinsic parameters of the GaN MESFET device.
Download or read book Analytical Modeling of Scaling the Ion implanted Gallium Nitrate MESFET written by Deepak Sharma Ram Kamal and published by . This book was released on 2013 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, an analytical modeling of scaling the ion-implanted Gallium nitrate MESFET has been presented. The model has been developed to obtain high power aided efficiency and high frequency performance which can be optimized by scaling the device for miniaturization. Device parameters such as drain-source current and threshold voltage are plotted and discussed with respect to scaling factor to evaluate the device parameter for a comparative study of long channel and short channel gallium nitrate device. The scaling tool on the semiconductor device shows the device performance at their miniaturization stage, but all electrical parameters ultimately saturate up to certain range of device scaling.
Download or read book A Physics based Frequency Dispersion Model of GaN MESFETs written by Sai Neeraj Kandoori and published by . This book was released on 2017 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this project is to develop a physics based analytical model of Gallium Nitride (GaN) MESFETs device to determine the frequency response under the influence of a trap center in the interface of channel and substrate. The frequency response has been determined by evaluating the channel current, trans conductance, gate-source capacitance and gate-drain capacitance with/without the trap center effect. The research work has been executed by Matlab and the channel current has been evaluated by merging linear and non-linear regions to show the properties of trap effect on I-V characteristics. The effect of the traps center is extremely important for wide bandgap semiconductors due to the non-maturity of the material.
Download or read book Modeling of Gallium Nitride MESFETs at High Temperatures written by FNU Syed Zabiullah and published by . This book was released on 2015 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN shows an extreme promising material showing the properties of wide bandgap, high electron velocity and high breakdown voltage with low thermal generation rate, excellent thermal conductivity and high radiation resistance for high power and high frequency amplifier. An analytical model of GaN MESFET has been developed to simulate the temperature dependent drain current and transconductance. The drain current shows small variation in the current due the temperature transition from 300 K to 500 K. The transconductance also exhibits very insignificant change due to temperature variation from 300 K to 500 K. In order to understand the device performance at 300 K, the drain current has been computed for different gate-source voltage. The drain current clearly shows the linearity regime, non-linear regime and saturation regime to justify the validity of the model. Further, the drain current has been evaluated for different active channel thickness to justify the desired pinch-off voltage. The computed results show that GaN MESFET shows incredible thermal stability at extreme high temperatures.
Download or read book Physics Based Analytical Model of Gallium Nitrate Metal Semiconductor Field Effect Transistor Microwave Frequency Applications written by Hardeep Singh Gill and published by . This book was released on 2013 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Military based applications have a great interest in GaN based high power and efficient semiconductor materials devices. GaN Metal Semiconductor Field Effect Transistors (MESFETs) have accepted much consideration as its structure is less difficult to examine than that of High Electron Mobility Transistors (HEMTs) and its epi-layers and the physical impacts are simpler to acknowledge and decipher. Simple physics based analytical models are required to be developed for various parameters of GaN in order to use its vast potential in semiconductor electronics. This will give a new dimension to computer-aided digital design of GaN ICs. In this thesis an effort has been made to demonstrate various qualities of GaN such as I-V, C-V and transconductance keeping in account the impact of parasitic resistances.
Download or read book An Analytical Model for AlGaN GaN HEMT with Polarization Effects for High Power Applications written by Guangpu Liu (Graduate student) and published by . This book was released on 2016 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of the grad thesis is to develop a physics based analytical model for AlGaN/GaN modulation-doped field effect transistor (MODFET) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The linear and non-linear of the drain current have been separately calculate and merged them in order to evaluate the I-V characteristics. The method of evaluation of drain current gives high degree accuracy up to Nano-scaled devices. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. The large value of transconductance has been obtained for the specific layer thickness of AlGaN and GaN space layer. The drain-conductance has been evaluated to understand the power performance. The graduate thesis incorporates the introduction of the research work in chapter one, gallium nitride material is in chapter two, AlGaN/GaN HEMT polarization effects analysis in chapter three, numerical calculation in chapter four and result discussion in chapter five.
Download or read book A Comprehensive Model of Frequency Dispersion of Gallium Nitride MESFET written by Rumman Raihan and published by . This book was released on 2018 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt: A physics based analytical modeling for Gallium Nitride (GaN) MESFET has been developed in this project to calculate drain to source current versus drain to source voltage and the transconductance with and without traps centers using MATLAB software. The drain-bias dependence of trapped carrier concentration has been calculated and incorporated in drain current and transconductance to study the traps behavior on drain current and transconductance. The drain current has been developed by two sets of equations for non-saturation and saturation current components and two current equations have been merged by optimizing different physical parameters. Hence, the current clearly shows linear and non-linear properties to validate the device performance. The transconductance has been derived from the derivative of saturated drain current function to gate-source voltage for constant drain-source voltage. The threshold voltage has been determined from the gate-source voltage, when the transconductance is equal to zero. The transconductance has been also determined for various active channel thicknesses, which reflects the device frequency performance.
Download or read book Analytical Model of GaN MESFET s with Velocity Saturation and Negative Differential Resistance written by Sunil Nagaraj and published by . This book was released on 2015 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: A physics based analytical model of GaN MESFET has been developed to study the negative differential resistance (NDR) effect on the carrier drift velocity and carrier mobility to promote the GaN MESFET device for high frequency range in order of terra hertz (THz). The NDR effect on the drain-source current, transconductance and gate capacitance has been studied and the domain effect on electrical and intrinsic parameters has been considered to enhance the device frequency response. The domain formation in the channel MESFET has been determined by the electrical field distribution in the channel doping concentration.
Download or read book Simulation of Gallium Nitride GaN MESFET Using Analytical Modeling MATLAB Software for High Frequency Applications written by Sharanjit Singh and published by . This book was released on 2011 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Temperature Dependent Analytical Modeling Simulation and Characterizations of HEMTs in Gallium Nitride Process written by Hasina F. Huq and published by . This book was released on 2006 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research is being conducted for a high-performance building block for high frequency and high temperature applications that combine lower costs with improved performance and manufacturability. Researchers have focused their attention on new semiconductor materials for use in device technology to address system improvements. Of the contenders, silicon carbide (SiC), gallium nitride (GaN), and diamond are emerging as the front-runners. GaN-based electronic devices, AlGaN/GaN heterojunction field effect transistors (HFETs), are the leading candidates for achieving ultra-high frequency and high-power amplifiers. Recent advances in device and amplifier performance support this claim. GaN is comparable to the other prominent material options for high-performance devices. The dissertation presents the work on analytical modeling and simulation of GaN high power HEMT and MOS gate HEMT, model verification with test data and device characterization at elevated temperatures. The model takes into account the carrier mobility, the doping densities, the saturation velocity, and the thickness of different layers. Considering the GaN material processing limitations and feedback from the simulation results, an application specific AlGaN/GaN RF power HEMT structure has been proposed. The doping concentrations and the thickness of various layers are selected to provide adequate channel charge density for the proposed devices. A good agreement between the analytical model, and the experimental data is demonstrated. The proposed temperature model can operate at higher voltages and shows stable operation of the devices at higher temperatures. The investigated temperature range is from 100°K to 600°K. The temperature models include the effect of temperature variation on the threshold voltage, carrier mobility, bandgap and saturation velocity. The calculated values of the critical parameters suggest that the proposed device can operate in the GHz range for temperature up to 600°K, which indicates that the device could survive in extreme environments. The models developed in this research will not only help the wide bandgap device researchers in the device behavioral study but will also provide valuable information for circuit designers.
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
