Download or read book An Accurate Model for the Short Channel Insulated Gate Field effect Transistor written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1971 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: An accurate short channel Insulated gate field-effect transistor (IGFET) model is described which includes the effect of the drain depletion region on device characteristics in both triode and saturation regions. Calculation of deviations from the classical triode and saturation equations caused by interaction between the drain depletion region and the surface inversion region in devices constructed on lightly doped (
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1986 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Computer Aided Analysis of Insulated Gate Field Effect Transistors written by Mark Brown Barron and published by . This book was released on 1969 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: The classical analysis of Insulated Gate Field-Effect Transistors (IGFET) is reviewed and the corresponding theory is compared with experimental characteristics. The limitations of this theory are indicated and the reasons for the limitations are explained in terms of the device physics. Two operating configurations which do not comply with the classical theory are subsequently analyzed with the aid of a digital computer; these are low-level current operation for gate voltages near threshold, and punch-through operation for short devices. The numerical data obtained from the low-level analysis is compared with experimental V-I characteristics, and it is shown that the device can be accurately modeled using the classical surface physics equations. Algebraic approximations, which offer certain advantages over numerical analysis, are shown to adequately describe transistor operation over certain current ranges. Derivations of the finite difference equations for numerical iterative analysis of the IGFET are described in detail. Certain stability problems are found to occur and methods for avoiding these are presented. Results of the analyses of short-channel devices are presented in the form of three-dimensional projections of the potential and carrier distributions. (Author).
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Digital Integrated Circuits written by John E. Ayers and published by CRC Press. This book was released on 2018-09-03 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: Exponential improvement in functionality and performance of digital integrated circuits has revolutionized the way we live and work. The continued scaling down of MOS transistors has broadened the scope of use for circuit technology to the point that texts on the topic are generally lacking after a few years. The second edition of Digital Integrated Circuits: Analysis and Design focuses on timeless principles with a modern interdisciplinary view that will serve integrated circuits engineers from all disciplines for years to come. Providing a revised instructional reference for engineers involved with Very Large Scale Integrated Circuit design and fabrication, this book delves into the dramatic advances in the field, including new applications and changes in the physics of operation made possible by relentless miniaturization. This book was conceived in the versatile spirit of the field to bridge a void that had existed between books on transistor electronics and those covering VLSI design and fabrication as a separate topic. Like the first edition, this volume is a crucial link for integrated circuit engineers and those studying the field, supplying the cross-disciplinary connections they require for guidance in more advanced work. For pedagogical reasons, the author uses SPICE level 1 computer simulation models but introduces BSIM models that are indispensable for VLSI design. This enables users to develop a strong and intuitive sense of device and circuit design by drawing direct connections between the hand analysis and the SPICE models. With four new chapters, more than 200 new illustrations, numerous worked examples, case studies, and support provided on a dynamic website, this text significantly expands concepts presented in the first edition.
Download or read book An Investigation of a P induced Channel Insulated gate Field effect Transistor written by Kevin Grant Stogsdill and published by . This book was released on 1964 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt: The analysis and use of the p-induced channel insulatedgate field-effect transistor (P-ICFET) were investigated. A simplified charge distribution analysis and the experimental determination of the figures of merit, gain-bandwidth and power gain, were utilized to predict the operation of the P-ICFET in the RF range. A shortcircuit admittance parameter equivalent model which was modified to include regenerative effects was completed with the subsequent design and construction of an 100 mc/s amplifier and oscillator. The typical P-ICFET amplifier exhibited a power gain of 8-15 db and as an oscillator had a power output of 2-4 milliwatts at an efficiency of 20-40%. (Author).
Download or read book An Investigation of a P induced Channel Insulated gate Field effect Transistor written by Kevin Grant Stogsdill (1LT, USAF.) and published by . This book was released on 1964 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book FinFET Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Academic Press. This book was released on 2015-03-17 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG
Download or read book State of the Art of Millimeter Wave Silicon Technology written by Jaco du Preez and published by Springer Nature. This book was released on 2022-09-20 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the critical differences between current and next-generation Si technologies (CMOS, BiCMOS and SiC) and technology platforms (e.g. system-on-chip) in mm-wave wireless applications. We provide a basic overview of the two technologies from a technical standpoint, followed by a review of the state-of-the-art of several key building blocks in wireless systems. The influences of system requirements on the choice of semiconductor technology are vital to understanding the merits of CMOS and BiCMOS devices – e.g., output power, battery life, adjacent channel interference, cost restrictions, and so forth. These requirements, in turn, affect component-level design and performance metrics of oscillators, mixers, power and low-noise amplifiers, as well as phase-locked loops and data converters. Finally, the book offers a peek into the next generation of wireless technologies such as THz -band systems and future 6G applications.
Download or read book A Computer oriented Model for Insulated gate Field effect Transistors written by Mohammad Yasin Malik and published by . This book was released on 1971 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Silicon 1977 written by Howard R. Huff and published by . This book was released on 1977 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CMOS Analog Integrated Circuits written by Tertulien Ndjountche and published by CRC Press. This book was released on 2019-12-17 with total page 1176 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-speed, power-efficient analog integrated circuits can be used as standalone devices or to interface modern digital signal processors and micro-controllers in various applications, including multimedia, communication, instrumentation, and control systems. New architectures and low device geometry of complementary metaloxidesemiconductor (CMOS) technologies have accelerated the movement toward system on a chip design, which merges analog circuits with digital, and radio-frequency components.
Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Download or read book Novel Advances in Microsystems Technologies and Their Applications written by Laurent A. Francis and published by CRC Press. This book was released on 2017-07-28 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microsystems technologies have found their way into an impressive variety of applications, from mobile phones, computers, and displays to smart grids, electric cars, and space shuttles. This multidisciplinary field of research extends the current capabilities of standard integrated circuits in terms of materials and designs and complements them by creating innovative components and smaller systems that require lower power consumption and display better performance. Novel Advances in Microsystems Technologies and their Applications delves into the state of the art and the applications of microsystems and microelectronics-related technologies. Featuring contributions by academic and industrial researchers from around the world, this book: Examines organic and flexible electronics, from polymer solar cell to flexible interconnects for the co-integration of micro-electromechanical systems (MEMS) with complementary metal oxide semiconductors (CMOS) Discusses imaging and display technologies, including MEMS technology in reflective displays, the fabrication of thin-film transistors on glass substrates, and new techniques to display and quickly transmit high-quality images Explores sensor technologies for sensing electrical currents and temperature, monitoring structural health and critical industrial processes, and more Covers biomedical microsystems, including biosensors, point-of-care devices, neural stimulation and recording, and ultra-low-power biomedical systems Written for researchers, engineers, and graduate students in electrical and biomedical engineering, this book reviews groundbreaking technology, trends, and applications in microelectronics. Its coverage of the latest research serves as a source of inspiration for anyone interested in further developing microsystems technologies and creating new applications.
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Download or read book Stanford University Electronics Research Review written by and published by . This book was released on 1971 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes brief descriptions of projects, listings of contracts and grant support, and listings of publications.
