Download or read book AlGaN GaN High Electron Mobility Transistors on Silicon Substrate for RF microwave Applications written by Shuo Jia and published by . This book was released on 2005 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book AlGaN GaN High Electron Mobility Transistors on Silicon Substrate for RF microwave Applications written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Xiii, 87 leaves : ill. ; 30 cm.

Download or read book Analysis and Optimization of AlGaN GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Electrical and Electronic Devices Circuits and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Download or read book DEVICE MODELING OF AlGaN GaN HIGH ELECTRON MOBILITY TRANSISTORS HEMTs written by Manju Korwal Chattopadhyay and published by LAP Lambert Academic Publishing. This book was released on 2010-10 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for high-power applications at RF, microwave, and millimeter-wave frequencies. Owing largely to a high electrical breakdown field, electron sheet charge density, and substrate material with high thermal conductivity, these are capable of handling larger power density signals at high temperatures in unfriendly environments. The present work involves the analytical modeling of AlGaN/GaN material system based HEMTs. A polynomial represents Fermi-level as a non-linear function of sheet carrier density at the interface of HEMTs. Using this polynomial, models for finding the temperature dependent gate capacitance, parasitic MESFET dependent transconductance and dc characteristics including self-heating effects were formulated. The effects of spontaneous and piezoelectric polarization fields, have been investigated in detail. All results show reasonable agreement with the experimental data. Our analytical simulation should be useful in device designing, allowing interactive optimization of device configuration and economically complementing experimental investigations.

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Download or read book The RF and Microwave Handbook 3 Volume Set written by Mike Golio and published by CRC Press. This book was released on 2018-10-08 with total page 2208 pages. Available in PDF, EPUB and Kindle. Book excerpt: By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), as well as an overview of microwave engineering. Over 100 contributors, with diverse backgrounds in academic, industrial, government, manufacturing, design, and research reflect the breadth and depth of the field. This eclectic mix of contributors ensures that the coverage balances fundamental technical issues with the important business and marketing constraints that define commercial RF and microwave engineering. Focused chapters filled with formulas, charts, graphs, diagrams, and tables make the information easy to locate and apply to practical cases. The new format, three tightly focused volumes, provides not only increased information but also ease of use. You can find the information you need quickly, without wading through material you don’t immediately need, giving you access to the caliber of data you have come to expect in a much more user-friendly format.

Download or read book Millimeter wave GaN High Electron Mobility Transistors and Their Integration with Silicon Electronics written by Jinwook Will Chung and published by . This book was released on 2011 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. One of the key challenges is to improve its high frequency characteristics. In this thesis, we particularly focus on fT and fma, two of the most important figures of merit in frequency performance of GaN HEMTs and investigate them both analytically and experimentally. Based on an improved physical understanding and new process technologies, we aim to demonstrate the state-of-the-art high frequency performance of GaN HEMTs. To maximize fmax, parasitic components in the device (Ri, R, Rg, Cgd, and go) are carefully minimized and the optimized 60-nm AlGaN/GaN HEMT shows a very high fmax of 300 GHz. The lower-than-expected fT observed in many AlGaN/GaN HEMTs is attributed to a significant drop of the intrinsic transconductance at high frequency (RF gm) with respect to the intrinsic DC g. (called RF gm-collapse). By suppressing RF gm-collapse and harmoniously scaling the device, a record fT of 225 GHz is achieved in the 55-nm AlGaN/GaN HEMT. Another important challenge for the wide adoption of GaN devices is to develop suitable technology to integrate these GaN transistors with Si(100) electronics. In this thesis, we demonstrate a new technology to integrate, for the first time, GaN HEMTs and Si(100) MOSFETs on the same chip. This integration enables the development of hybrid circuits that take advantage of the high-frequency and power capability of GaN and the unsurpassed circuit scalability and complexity of Si electronics.

Download or read book Design and Fabrication of RF AlGaN GaN High Electron Mobility Transistors on SiC Substrates written by Chung-Wang Su and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

Download or read book RF and Microwave Passive and Active Technologies written by Mike Golio and published by CRC Press. This book was released on 2018-10-03 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.

Download or read book Undoped Aluminum Gallium Nitride gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Surface and Mechanical Stress Effects in AlGaN GaN High Electron Mobility Transistors written by Sameer Jayanta Joglekar and published by . This book was released on 2017 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) belongs to a class of materials called wide band-gap semiconductors. In recent years, the versatile nature of this material has been exploited for a wide range of applications from solid state lighting to RF and microwave communication, as well as high power switching. The first part of this thesis discusses planar AlGaN/GaN transistors. GaN is a piezoelectric material, and changes in mechanical stress result in a change in the charge density which in turn affects the maximum current in AlGaN/GaN transistors. Finite element modelling techniques were applied to quantify the mechanical stress distribution in planar AlGaN/GaN RF transistors resulting from device fabrication, and operation in the on- and off-state. Thereafter, two important surface and interface effects were studied in this thesis. In the first one, the impact of surface cleanings, surface treatments and plasma-based dry etch conditions on two different types of ohmic contact technologies was investigated. Contact resistance measurements were correlated with surface characterization results. The second was that of interface positive charges at the Al2O3-GaN interface and the increase in electron density in the device resulting from them. In both these problems, a combination of device electrical measurements and material characterization techniques was used to establish direct correlations between device behavior and material properties. The second part of the thesis deals exclusively with nano-ribbon (NR) or fin-like AlGaN/GaN transistors. Fundamental transport properties of charge density and mobility in NR devices were studied in order to understand the difference in behavior of these devices from planar devices. The influence of passivation films on the charge density in these structures was investigated, using Al2O3 passivation as a specific example. Electron mobility degradation due to sidewall-scattering in NR devices was quantified using different mobility extraction methods based on device measurements. The thesis concludes with a potential application of NR AlGaN/GaN transistors for high linearity power amplification. A new kind of transistor with varying threshold voltages along the gate width is proposed to improve the DC and RF linearity of GaN-based devices.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book Development of AlGaN GaN High Electron Mobility Transistors HEMTs on Diamond Substrates written by and published by . This book was released on 2006 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide bandgap devices such as gallium nitride (GaN) to include the possibility for high power and high frequency operation. A new generation of high speed 6 high frequency devices is required to meet current and future military needs. The Gallium Nitride High Electron Mobility Transistor (HEMT) is showing great promise as the enabling technology in the development of military radar systems, electronic surveillance systems, communications systems and high voltage power systems. Typically, sapphire or silicon carbide is utilized as the substrate material in most HEMT designs. This thesis explores the possibility of utilizing a diamond substrate to increase the power handling capability of the AlGaN/GaN HEMT. Diamond offers increased thermal property parameters that can be simulated in the commercially available Silvaco software package. A complete electrical and thermal analysis of the model was conducted and compared to actual device characteristics. The results of the software simulation and measurements on the test devices indicate diamond substrates will enable the HEMT to be operated at a higher power than traditional sapphire substrate HEMTS.