Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Download or read book AlGaN GaN HEMT Power Amplifiers with Optimized Power Added Efficiency for X Band Applications written by Jutta Kühn and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
Download or read book ICCWCS 2019 written by Jamal Zbitou and published by European Alliance for Innovation. This book was released on with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, computer science engineering and telecommunications are two important areas linked and even inseparable. This is obvious for the user who connects the modem of his computer on his mobile phone or telephone line to access, via the global data network, the information available on the servers. The both domains are evolving rapidly and the development of new architectures of systems dedicated to telecommunications and computing becomes essential. Especially, wireless transmission systems with high data rate. Two parts of these systems should be developed software and hardware. Another area that is renewable energies becomes more attractive for researchers in order to develop new conversion systems with good performances, and a good optimization of energy. For example, in wireless sensor systems, we try to develop new protocols permitting to have a good autonomy in terms of energy.
Download or read book Motion Compensation for Near Range Synthetic Aperture Radar Applications written by Huaming Wu and published by KIT Scientific Publishing. This book was released on 2014-07-30 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work focuses on the analysis of influences of motion errors on near-range SAR applications and design of specific motion measuring and compensation algorithms. First, a novel metric to determine the optimum antenna beamwidth is proposed. Then, a comprehensive investigation of influences of motion errors on the SAR image is provided. On this ground, new algorithms for motion measuring and compensation using low cost inertial measurement units (IMU) are developed and successfully demonstrated.
Download or read book Active Radar Cross Section Reduction written by Hema Singh and published by Cambridge University Press. This book was released on 2015-03-02 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the active and passive radar cross section (RCS) estimation and techniques to examine the low observable aerospace platforms. It begins with the fundamentals of RCS, followed by the dielectric, magnetic and metamaterials parameters of the constituent materials and then explains various methods and the emerging trends followed in this area of study. The RCS estimation of phased array including the mutual coupling effect is also presented in detail in the book. The active RCS reduction is carefully touched upon through the performance of phased arrays, sidelobe cancellers and mitigation of multipath effect. Providing information on various adaptive algorithms like least mean square (LMS), recursive least square (RLS) and weighted least square algorithms, the authors also mention the recent developments in the area of embedded antennas, conformal load bearing antenna, metamaterials and frequency selective surface (FSS) based RCS reduction.
Download or read book Materials Physics and Device Development for Improved Efficiency of GaN HEMT High Power Amplifiers written by Steven Ross Kurtz and published by . This book was released on 2005 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.
Download or read book Modeling Backscattering Behavior of Vulnerable Road Users Based on High Resolution Radar Measurements written by Abadpour, Sevda and published by KIT Scientific Publishing. This book was released on 2023-11-20 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the evolvement of autonomous driving technology, obtaining reliable 3-D environmental information is an indispensable task in approaching safe driving. The operational behavior of automotive radars can be precisely evaluated in a virtual test environment by modeling its surrounding, specifically vulnerable road users (VRUs). Such a realistic model can be generated based on the radar cross section (RCS) and Doppler signatures of a VRU. Therefore, this work proposes a high-resolution RCS measurement technique to determine the relevant scattering points of different VRUs.
Download or read book High Precision Automotive Radar Target Simulation written by Diewald, Axel and published by KIT Scientific Publishing. This book was released on 2023-08-15 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radar target simulators (RTSs) deceive a radar under test (RuT) by creating an artificial environment consisting of virtual radar targets. In this work, new techniques are presented that overcome the rasterization deficiency of current RTS systems and enable the generation of virtual targets at arbitrary high-precision positions. This allows for continuous movement of the targets and thus a more credible simulation environment.
Download or read book Intelligent Reflecting Surfaces in Wireless Communication Systems written by Li, Yueheng and published by KIT Scientific Publishing. This book was released on 2024-02-23 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accompanied with the development of the wireless communication technologies, the high data traffic is more necessary for civil and industrial applications than ever The concept of an intelligent reflective surface (IRS) has attracted considerable attention recently as a low-cost solution. As the main contribution, the dissertation creates new state-of-the-art and formulates a solid milestone for the IRS research field.
Download or read book High Linearity and High Efficiency RF MMIC Power Amplifiers in AlGaN GaN HEMT Technology written by Shouxuan Xie and published by . This book was released on 2004 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern wireless communication systems require high performance RF power amplifiers with high linearity and high efficiency. Class B power amplifiers can achieve relatively high efficiency with good bandwidth, and potentially low distortion.
Download or read book Large Signal Modeling of GaN Device for High Power Amplifier Design written by Anwar Hasan Jarndal and published by kassel university press GmbH. This book was released on 2006 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Large signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. - Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics - Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies - Written by a panel of academic and industry experts in each field
Download or read book Switchmode RF and Microwave Power Amplifiers written by Andrei Grebennikov and published by Academic Press. This book was released on 2021-03-19 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Download or read book Solid state Microwave High power Amplifiers written by Franco Sechi and published by Artech House. This book was released on 2009 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical resource offers expert guidance on the most critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover you gain keen insight on the link between design parameters and technological implementation, helping you achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phase noise and power combiners... to high-efficiency amplifiers, linear amplifier design, bias circuits, and thermal design.
