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Book AlGaAs GaAs Quantum Well Infrared Photodetectors

Download or read book AlGaAs GaAs Quantum Well Infrared Photodetectors written by Michael A. Dem'yanenko and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Quantum Well Infrared Photodetectors

Download or read book Quantum Well Infrared Photodetectors written by Harald Schneider and published by Springer. This book was released on 2006-10-18 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Book Multi Band GaAs AlGaAs Quantum Well Infrared Photodetector  QWIP  Focal Plane Arrays

Download or read book Multi Band GaAs AlGaAs Quantum Well Infrared Photodetector QWIP Focal Plane Arrays written by and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTAlamba/lamba 10 %) to wide (DELTAlamba/lamba 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640x512 dual-band and four-band QWIP FPAs.

Book AlGaAs GaAs Quantum Well Infrared Detectors and Modulators

Download or read book AlGaAs GaAs Quantum Well Infrared Detectors and Modulators written by Digant Praful Dave and published by . This book was released on 1990 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book GaAs AlGaAs  InGaP  AlInP Material Systems for Quantum Well Infrared Photodetectors

Download or read book GaAs AlGaAs InGaP AlInP Material Systems for Quantum Well Infrared Photodetectors written by Nevenka Golubovic and published by . This book was released on 1994 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Observation of Quantum Confined Stark Effect in Triple Coupled InGaAs GaAs AlGaAs Quantum Well Infrared Photodetector

Download or read book Observation of Quantum Confined Stark Effect in Triple Coupled InGaAs GaAs AlGaAs Quantum Well Infrared Photodetector written by and published by . This book was released on 1997 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated the quantum-confined Stark effect (QCSE) in several n-type InGaAs/GaAs/AlGaAs triple-coupled quantum well infrared photodetectors (TC-QWIPs) for 8-12 micrometers long wavelength infrared (LWIR) detection. The basic structure of this TC-QWIP consists of three coupled quantum wells (QWs) formed by a Si-doped In(x)Ga(1-x)As QW and two undoped thin GaAs QWs separated by two thin Al(y)Ga(1-y)As barriers. Three TC-QWIP devices with varying indium and aluminum compositions were fabricated and characterized. A strong QCSE for the (E1 to E3) transition was observed in the wavelength range of 8.2 - 9.1 micrometers, 10.8 - 11.5 micrometers, and 9.4 - 10.7 micrometers for QWIP-A, -B, and -C, respectively. These devices exhibit a linear dependence of peak wavelength on the applied bias voltage over these wavelengths ranges. Peak responsivities, R(1) = 0.05, 0.33 A/W and detectivities, D*(BLIP) = 6.1x10(exp9), l.63x10(exp10)cm-Hz(1/2)/W at V(b)=5, 4 V, lamba(p)=8.6, 11.2 micrometers, and T(BLIP)=66, 50 K were obtained for QWIP-A and -B, respectively. For QWIP-C, R(1)=0.19 A/W was obtained at lamba(p)=9.3 micrometers, V(b)=7 V, and T+60 K.

Book 640 X 486 Long Wavelength Two Color GaAs AlGaAs Quantum Well Infrared Photodetector  QWIP  Focal Plane Array Camera

Download or read book 640 X 486 Long Wavelength Two Color GaAs AlGaAs Quantum Well Infrared Photodetector QWIP Focal Plane Array Camera written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have designed and fabricated an optimized long-wavelength/very-long-wavelength two-color quantum well infrared photodetector (QWIP) device structure. The device structure was grown on a 3-in semi- insulating GaAs substrate by molecular beam epitaxy (MBE) . The wafer was processed into several 640 x 486 format monolithically integrated 8-9 and 14-15 micrometers two-color (or dual wavelength) QWIP focal plane arrays (FPA's). These FPA's were then hybridized to 640 x 486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into liquid helium cooled dewar for electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micrometers detectors in the FPA have shown background limited performance (BLIP) at 7O K operating temperature for 300 K background with f/2 cold stop. The 14-15 micrometers detectors of the SPA reach BLIP at 40 K operating temperature under the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP SPA in terms of quantum efficiency, detectivity, noise equivalent temperature difference (NE DELTA T), uniformity, and operability.

Book Investigation of Normal Incident High Performance P type Strained Layer InGaAs AlGaAs and GaAs AlGaAs Quantum Well Infrared Photodetectors

Download or read book Investigation of Normal Incident High Performance P type Strained Layer InGaAs AlGaAs and GaAs AlGaAs Quantum Well Infrared Photodetectors written by and published by . This book was released on 1995 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressively strained p-type InGaAs/AlGaAs QWIP grown on GaAs by MBE with very low dark current densities. This new QWIP achieved two color detection with detection peaks at 7.4 micrometers in the LWIR band and 5.5 micrometers in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 67 K, with operation possible at temperatures greater than 85 K. The measured responsivity was found to be 40 mA/W for the LWIR peak, while a responsivity of 8 mA/W was found for the MWIR peak; all at T=77 K. In addition, the measured detectivity was found to be 1.06 x 10(exp 10) Jones at T=81 K and 1.0 V of applied bias. In addition, two new compressively strained p-QWIPs with detection peaks at 9.2 micrometers and 10.1 micrometers were characterized. Responsivities of 28 mA/W at T=45 K and V=-2.5 V and 1% mA/W at T=55 K and -1.0 V were measured at the 9.2 micrometers and 10.1 micrometers peaks respectively. The 9.2 micrometers p-QWIP has an estimated D* of 2.7 x 1O(exp 9) Jones, while the 10.1 micrometers peak p-QWIP has an estimated D*-of 1.04 x 10(exp 9) Jones. Finally, a Si-doped unstrained p-QWIP grown on (311) Si GaAs was characterized. This p-QWIP exhibits extremely symmetrical dark current characteristics and has two MWIR detective peaks at 3.0 micrometers and 5.2 micrometers. jg p.2.

Book Intersubband Infrared Photodetectors

Download or read book Intersubband Infrared Photodetectors written by V. Ryzhii and published by World Scientific. This book was released on 2003 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.

Book Voltage Controlled Tunable GaAs AlGaAs Multistack Quantum Well Infrared Detector

Download or read book Voltage Controlled Tunable GaAs AlGaAs Multistack Quantum Well Infrared Detector written by and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: We describe a new type of intersubband GaAs/AlGaAs infrared detector consisting of three stacks of quantum wells; the quantum wells in a given stack-are identical, but are different from stack to stack. Each stack is designed to yield an absorption and a photoresponse at a different peak wavelength. The resulting device is an infrared detector which can operate in a number of modes. Among the features of this device are a wide-band detection domain, a tunable response and excellent responsivities and noise figures. The tunable operation includes a sharp peak-switching response which follows the formation, expansion, and readjustment of electric field domains within the multiquantum well region.

Book New Ternary Alloy Systems for Infrared Detectors

Download or read book New Ternary Alloy Systems for Infrared Detectors written by Antoni Rogalski and published by SPIE Press. This book was released on 1994 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Quaternary Capped In Ga As GaAs Quantum Dot Infrared Photodetectors

Download or read book Quaternary Capped In Ga As GaAs Quantum Dot Infrared Photodetectors written by Sourav Adhikary and published by Springer. This book was released on 2017-09-06 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.

Book Infrared Detectors

    Book Details:
  • Author : Antonio Rogalski
  • Publisher : CRC Press
  • Release : 2010-11-15
  • ISBN : 1420076728
  • Pages : 900 pages

Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un

Book Physical Models of Semiconductor Quantum Devices

Download or read book Physical Models of Semiconductor Quantum Devices written by Ying Fu and published by Springer. This book was released on 2013-11-27 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.

Book Intersubband Transitions in Quantum Wells

Download or read book Intersubband Transitions in Quantum Wells written by Emmanuel Rosencher and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.