Download or read book AI Ga In N Heterostructures Grown Along Polar and Non polar Directions by Plasma assisted Molecular Beam Epitaxy written by Patrick Waltereit and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Al Ga In N Heterostructures Grown Along Polar and Non polar Directions by Plasma assisted Molecular Beam Epitaxy written by Patrick Waltereit and published by . This book was released on 2001 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structural and Optical Properties of GaN based Heterostructures Grown by Plasma Assisted Molecular Beam Epitaxy written by Kyu-Hwan Shim and published by . This book was released on 1997 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Pure AlN Layers in Metal polar AlGaN AlN GaN and AlN GaN Heterostructures Grown by Low temperature Ammonia based Molecular Beam Epitaxy written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Molecular Beam Epitaxy Growth and Characterization of GaN AlN and AlGaN GaN Heterostructures written by Stefan Davidsson and published by . This book was released on 2005 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Blue Laser Diode written by Shuji Nakamura and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1993, the author, Shuji Nakamura developed the first commercially available blue and green light-emitting diodes. Now he has made the most important breakthrough in solid state laser techniques to date - the first blue semiconductor laser based on GaN. Here, Dr. Nakamura discusses the physical concept and basic manufacturing technology of these new blue light-emitting and laser diodes. he shows how this represents a new era in commercial applications for semiconductors, including displays, road and railway signalling, lighting, scanners, optical data storage, and much more. Moreover, Nakamura provides fascinating background information on the extraordinary realisation of an extremely successful concept of research and development. Of interest to researchers as well as engineers.
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Download or read book Metals Abstracts written by and published by . This book was released on 1981 with total page 1278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Spectroscopy of Complex Oxide Interfaces written by Claudia Cancellieri and published by Springer. This book was released on 2018-04-09 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers – in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.
Download or read book GaN and ZnO based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Download or read book Polar Oxides written by Rainer Waser and published by John Wiley & Sons. This book was released on 2006-03-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here, more than 20 experts from leading research institutes around the world present the entire scope of this rapidly developing field. In so doing, they cover a wide range of topics, including the characterization and investigation of structural, dielectric and piezoelectric properties of ceramic materials, a well as phase transitions, electrical and optical properties and microscopic investigations. Another feature is a complete profile of the properties of polar oxides -- from their proof to their latest applications. Throughout, the authors review, discuss and assess the material properties with regard to new and advanced characterization and imaging techniques. For physicists, physicochemists, semiconductor and solid state physicists, materials scientists, and students of chemistry and physics.
Download or read book Solid State Properties written by Mildred Dresselhaus and published by Springer. This book was released on 2018-01-17 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.
Download or read book Hard X ray Photoelectron Spectroscopy HAXPES written by Joseph Woicik and published by Springer. This book was released on 2015-12-26 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.
Download or read book Metals Abstracts Index written by and published by . This book was released on 1981 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt:
