Download or read book Advanced Processing Techniques for Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced Process Development for Contacts to Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors Hemts written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Vinayak Tilak and published by . This book was released on 2002 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Download or read book Aluminium Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Yao-Cheng Liu and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Undoped Aluminum Gallium Nitride gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characteristics Optimization and Integrated Circuit Applications of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Bruce McRae Green and published by . This book was released on 2001 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ohmic Metallizations to Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors Electrical and Microstructural Studies written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced Dielectrics for Gallium Nitride Power Electronics written by Richard James Brown and published by . This book was released on 2011 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz) dielectrics to AlGaN/GaN based high electron mobility transistors (HEMTs). A detailed study of the effect on A fabrication process for such devices utilizing the Al x Siy Nz passivation is presented, and their performance at frequencies ranging from DC to the microwave is compared to devices utilizing more traditional Siy Nz films for the same purpose. As AlGaN/GaN HEMT technology has matured, much focus has been placed on the passivation dielectric itself, as many parasitic device mechanisms are directly influenced by it. Metrics such as breakdown voltage, efficiency, and high-frequency dispersion are all greatly affected by the type of passivation applied. In this work the application of LPCVD Al x Siy Nz films as AlGaN/GaN HEMT passivants is presented and shown to yield superior devices to ones passivated with similarly deposited Siy Nz dielectrics. Breakdown voltage, power added efficiency (PAE), output power density were all measured to be superior on the Al x Siy Nz passivated devices when measured under large-signal conditions at 10 GHz.

Download or read book Two Dimensional Modeling of Aluminum Gallium Nitride Gallium Nitride High Electron Mobility Transistor written by Kenneth L. Holmes and published by . This book was released on 2002-06-01 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems. The Office of Naval Research (ONR) is funding research for the development of GaN- based microwave power amplifiers for use in future radar and communication systems. This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation. The polarization properties are suspected to enhance the two-dimensional electron gas (2DEG) at the AIGaN/GaN interface.

Download or read book Aluminum Gallium Nitride gallium Nitride HEMTs for High Power Applications Transistor Design Issues and Process Development written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Download or read book Design Fabrication and Characterization of Gallium Nitride High electron mobility Transistors written by Jonathan George Felbinger and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past few years, systems based on gallium nitride high-electron-mobility transistors (GaN HEMTs) have increasingly penetrated the markets for cellular telephone base stations, RADAR, and satellite communications. High power (several W/mm), continuous-wave (CW) operation of microwave HEMTs dissipates heat; as the device increases in temperature, its electron mobility drops and performance degrades. To enhance high-power performance and enable operation in high ambient temperature environments, the AlxGa1[-]xN/GaN epitaxial layers are attached to polycrystalline diamond substrates. e lower surface temperature rise on GaN-on- diamond is directly measured; subsequently, improved electrical performance is demonstrated on diamond versus the native (Si) substrates. Benchmark AlxGa1[-]xN/GaN devices are fabricated on SiC for comparison to diamond, Si, and bulk GaN substrates; the merits and performance of each is compared. In collaboration with Group4 Labs, X-band amplifier modules based on GaN-on-diamond HEMTs have been demonstrated for the first time. Recent efforts have focused on substituting AlxIn1[-]xN barriers in place of AlxGa1[-]xN to achieve higher output power at microwave frequencies and addressing the challenges of this new material system. Ultimately, these techniques may be combined to attain the utmost in device performance.

Download or read book Gallium Nitride High Mobility Electron Transistors for Power Amplification Applications written by Oliver Peter Amnuayphol and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: With increasing demand for high power density switching devices and a more advanced cellular network, i.e. 5G, on the impending horizon, wide-bandgap semiconductors are quickly becoming the de facto semiconductor device type to serve this need, of which the Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) device in particular has seen increasing demand due to its unique combination of favorable compound material characteristics and highly efficient operation. In this project, GaN HEMT devices are designed, fabricated, and characterized, and a 12-element, empirical equivalent circuit for GaN HEMTs is modeled. For modeling, published intrinsic and extrinsic characteristics of a selected device were analyzed and used as a template for creating a Symbolically Defined Device (SSD) model in Keysight’s Advanced Design System (ADS) software. This model was then used to obtain a key device characterization parameter, namely current-voltage (I-V) curves, through a curve-fitting process utilizing analytical equations. The AlGaN/GaN HEMT device design and fabrication process flow is discussed, after which the device is characterized and analyzed with regards to the impact of nitride stress liners on AlGaN/GaN HEMT device performance.

Download or read book Design Simulation and Development of Advanced Gallium Nitride Based High Electron Mobility Transistors for Power Electronic Applications written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vertical Gallium Nitride PowerDevices Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.

Download or read book Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistor written by Yun-Ju Sun and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: