Download or read book Advanced Processing of GaN and GaN based Devices written by Haijing Yu and published by . This book was released on 2004 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs.
Download or read book GaN based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Download or read book GaN Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Advanced Processing of GaN for Novel Electronic Devices written by Xian-an Cao and published by . This book was released on 2000 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book Advanced GaN Devices and Technology for Rf and Power Switching Applications written by Bo Song and published by . This book was released on 2016 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN-based devices show great potential for high-speed RF power applications as well as power switching applications due to the high electron velocity and high breakdown field in GaN over Si, GaAs and SiC. Another unique property of III-V nitride materials (GaN, AlN, InN) is polarization, which can be engineered to induce 2-dimensional electron gas (2DEG) at heterojunction interfaces as well as induce 3-D electron gas in thick (bulk) layers by grading the alloy composition of the layers, e.g. AlGaN, without impurity doping. This unconventional doping scheme is termed as polarization-doping or Pi-doping. This work focuses on device development and proposals to advance GaN technologies for RF and power switching applications. During the quest to realize THz GaN transistors, it has been identified that the ultimate factors limiting the GaN high electron mobility transistors (HEMTs) are the intrinsic transconductance (gm) and the fringing capacitance (Cfringing) associated with the T-gate: speed gm/Cfringing. In InAlN/GaN HEMTs, the device current gain cut-off speed is increased from 230 GHz to >300 GHz by reducing Cfringing and further increased to ~ 400 GHz by improving gm. Effects of scaling the source-drain distance on ultra-scaled devices are also studied. Low leakage and low current collapse (or frequency dispersion) are crucial for transistors. A record-low leakage of 1x10-12 A/mm simultaneously with a low current collapse is achieved in AlGaN/GaN-on-Si HEMTs employing the regrown ohmic contact technology. The device improvement is attributed to the contact regrowth since generation of surface traps is minimized by avoiding the conventional high temperature annealing process to form alloyed ohmic contacts. For high-voltage high-current power switching applications (>100 kW), vertical devices are highly desirable over lateral ones. To this end, we have proposed a series of GaN devices grown on bulk GaN substrates and employing the unique feature in the GaN material family - polarization doping. Analytical modeling suggests that at the same breakdown voltage, a up to 2x lower specific on-resistance (Ron,sp) can be achieved in Pi-doped devices compared to impurity doped GaN power devices. High voltage impurity and Pi-doped GaN p-n diodes with a breakdown voltage (BV) >1.2 kV and avalanche breakdown capability have been developed experimentally. Another concept called GaN Lateral Polar Super Junctions (LPSJ) is also proposed and theoretically analyzed, featuring uniformly Pi-doped n/p-pillars to overcome the conventional tradeoff between BV and Ron,sp in a unipolar drift region of a power device. The design space for GaN LPSJs is explored using a 2D analytical model of BV and Ron,sp under both charge balanced and imbalanced conditions.
Download or read book High Frequency GaN Electronic Devices written by Patrick Fay and published by Springer. This book was released on 2019-08-01 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Download or read book Processing and Properties of Advanced Ceramics and Composites IV written by J. P. Singh and published by John Wiley & Sons. This book was released on 2012-09-28 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributed papers from the 2011 Materials Science and Technology symposia, this is a useful one-stop resource for understanding the most important issues in the processing and properties of advanced ceramics and composites. Logically organized and carefully selected, the articles cover the themes of the symposia: Innovative Processing and Synthesis of Ceramics, Glasses and Composites; Advances in Ceramic Matrix Composites; Solution-Based Processing of Materials; and Microwave Processing of Materials. A must for academics in mechanical and chemical engineering, materials and or ceramics, and chemistry.
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.
Download or read book Monolithic Integration in E Mode GaN Technology written by Maik Peter Kaufmann and published by Springer Nature. This book was released on 2022-10-26 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Download or read book Design space and Scalable Technology for GaN Based Power Transistors written by Daniel Piedra (Ph. D.) and published by . This book was released on 2018 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon devices approach their intrinsic material and technological limit, there is an opportunity for alternative semiconductor materials to push the performance of electronics forward. Gallium nitride (GaN) has demonstrated very promising performance for advanced electronics, but there is still room for improvement. This thesis discusses several new transistor designs to improve the performance of GaN-based power devices as well as demonstrations of their scaling potential and integration capability with silicon. Specifically, we have developed a wide-periphery GaN fin-based high electron mobility transistor process for power switching. The process was developed with emphasis on the passivation, field plates, gate periphery scaling, and packaging. A CMOS compatible GaN processing technology on 200-mm wafers was developed and optimized, with particular attention focused on the recess etching through the wide-bandgap AlGaN barrier to reduce the contact resistance. A study of a heterogeneous integration technology to integrate GaN and Si devices was conducted. This involved an approach to monolithically integrate GaN and Si devices which used a bonded SOI wafer with a Si (111) substrate and Si (100) device layer with windows opened to access the (111) layer to selectively grow GaN. Characterization of the transistor properties in GaN windows of different sizes was performed to qualify the optimal window size for power devices in future integrated systems.
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Download or read book Processing and Properties of Advanced Ceramics and Composites VII written by Morsi M. Mahmoud and published by John Wiley & Sons. This book was released on 2015-10-05 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains 40 papers from the following 10 Materials Science and Technology (MS&T'14) symposia: Rustum Roy Memorial Symposium: Processing and Performance of Materials Using Microwaves, Electric and Magnetic Fields, Ultrasound, Lasers, and Mechanical Work Advances in Dielectric Materials and Electronic Devices Innovative Processing and Synthesis of Ceramics, Glasses and Composites Advances in Ceramic Matrix Composites Sintering and Related Powder Processing Science and Technology Advanced Materials for Harsh Environments Thermal Protection Materials and Systems Advanced Solution Based Processing for Ceramic Materials Controlled Synthesis, Processing, and Applications of Structure and Functional Nanomaterials Surface Protection for Enhanced Materials Performance
