Download or read book Advanced Optical Diagnostics of High Density Etching Plasmas written by and published by . This book was released on 2000 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this work was to investigate the use of in-situ spectroscopic ellipsometry as a means to control the etching of III-V semiconductors and in particular an AlGaAs/GaAs heterostructure used to form the emitter/base junction of a heterojunction bipolar transistor (HBT) used in high frequency circuits employed in Air Force communications. The specific objective was to use in-situ SE to monitor the etching of the AlGaAs emitter layer and stop to within a few nanometers of the GaAs base layer. Toward this end, an Electron Cyclotron Resonance (ECR) microwave plasma system and custom built stainless steel bell jar were used to construct an etch tool. The ECR microwave plasma is a low pressure, high density plasma source capable of producing highly anisotropic etch profiles. The ellipsometer used was a J. A. Woollam Co. model M-44. The M-44 is a 44 wavelength ellipsometer operating in the visible region from approx. 400-800 nm.
Download or read book Optical Diagnostics in Plasma Etching written by Shing Fai Leung and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Advanced Plasma Processing Techniques written by R.J. Shul and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Download or read book Optical Diagnostics in Plasma Etching written by Samuel Leung and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Etching written by M. Sugawara and published by OUP Oxford. This book was released on 1998-05-28 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this book is the remarkable advances in understanding of low pressure RF (radio frequency) glow discharges. A basic analytical theory and plasma physics are explained. Plasma diagnostics are also covered before the practicalities of etcher use are explored.
Download or read book Plasma Processing of Semiconductors written by P.F. Williams and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.
Download or read book Plasma Processing for VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Download or read book Optical Diagnostic Instrument for Monitoring Etch Uniformity During Plasma Etching of Polysilicon in a Chlorine helium Plasma written by and published by . This book was released on 1993 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nonuniform etching is a serious problem in plasma processing of semiconductor materials and has important consequences in the quality and yield of microelectronic components. In many plasmas, etching occurs at a faster rate near the periphery of the wafer, resulting in nonuniform removal of specific materials over the wafer surface. This research was to investigate in situ optical diagnostic techniques for monitoring etch uniformity during plasma processing of microelectronic components. We measured 2-D images of atomic chlorine at 726 nm in a chlorine-helium plasma during plasma etching of polysilicon in a parallel-plate plasma etching reactor. The 3-D distribution of atomic chlorine was determined by Abel inversion of the plasma image. The experimental results showed that the chlorine atomic emission intensity is at a maximum near the outer radius of the plasma and decreases toward the center. Likewise, the actual etch rate, as determined by profilometry on the processed wafer, was approximately 20% greater near the edge of the wafer than at its center. There was a direct correlation between the atomic chlorine emission intensity and the etch rate of polysilicon over the wafer surface. Based on these analyses, 3-D imaging would be a useful diagnostic technique for in situ monitoring of etch uniformity on wafers.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Etch Technology for Advanced Manufacturing written by Semiconductor Equipment and Materials International and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Optical Diagnostics in High Speed Flows written by M. Samimy and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Diagnostics of Colliding Laser Produced Plasmas written by Colm Fallon and published by . This book was released on 2013 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently prepulse techniques such as dual-pulse laser-induced breakdown spectroscopy (DP-LIBS) have emerged as commonly used analytical techniques for qualitative and quantitative elemental investigations in various research fields and disciplines such as industrial, defense and medical applications. The performance of the DP-LIBS technique is strongly dependent on the choice of the experimental conditions. The key parameters that affect its performance are the target properties, laser wavelength, pulse duration, energy and spot-size, interpulse delay times, delay time of observations, ambient background gas pressure and geometrical setup of the optics. The DP-LIBS approach provides significant enhancement in the intensities of emission lines and their lifetimes, up to two orders of magnitude greater than conventional single pulse laser induced breakdown spectroscopy. The aim of the work presented here is to further advance prepulse techniques, as well as other methods to control species density, with a view to optimise emission in the visible wavelength range. In particular, a new technique involving reheating the stagnation layer formed at the collision front between two (or more) colliding plasmas is explored. Spatially and temporally resolved imaging and spectroscopy of the interaction region between two colliding plasmas are employed to demonstrate for the first time that pumping of an optimised stagnation layer significantly increases the intensity emission and duration of selected spectral lines. This technique offers the promise of tunable density and tunable energy (temperature) plasmas. It will potentially increase both the lifetimes and intensities of spectral lines in laser produced plasmas by creating relatively low density - high energy plasmas which can overcome the problem of flux loss due to opacity, which leads to the attenuation of discrete emission lines with a concomitant reduction in line contrast, signal-to-noise ratio (SNR) and signal-to-background ratio (SBR). The latter is a key parameter in determining the limit-of-detection (LOD) of the LIBS technique. Other applications of stagnation layers include the development of 'target fuel' for Extreme UltraViolet (EUV) and X-ray light sources with an especial emphasis on generating high repetition rate, preheated droplet-like targets that can compete with the current liquid drop targets. The latter suffer from clogging at the jet nozzle due to adiabatic expansion freezing. Also, unlike stagnation layers the basic parameters of the droplet fuel cannot be easily varied in the way that stagnation layers allow.
Download or read book Plasma Etching for Advanced Polymer Optical Devices written by Donald Stephen Bitting and published by . This book was released on 2003 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Etching and Reactive Ion Etching written by J. W. Coburn and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Plasma Excitation Volume III Advanced Optical Diagnostics of Plasmas written by C. A. DeJoseph and published by . This book was released on 1981 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: A fourier transform infrared spectrometer was used to identify infrared absorption spectra of impurities that might be present in carbon dioxide laser discharges. Spectral regions free from interference from the primary constituents and common impurities such as water vapor were identified for several of the nitrogen oxides, and the detection sensitivities were determined. This information was used in a study of impurity buildup during discharges in an electron-beam excited closed cycle (EBCC) system and in a TEA CO2 laser. It was found that after an hour of irradiation in the continuous EBCC system, the oxides of nitrogen had built up to the ten parts per mission range while the carbon monoxide concentration was of the order of a few hundred parts per million. When the initial gas mix contained oxygen, the concentration of carbon monoxide and the nitrogen oxides increased. The addition of hydrogen to an oxygen free gas mix was found to produce water vapor at about ten percent of the initial hydrogen concentration, increase the production of N20 and of CO, and decrease the production of NO and NO2. A technique has been developed for determining the rotational temperature and vibrational population distribution of non-homonuclear molecules under nonequilibrium conditions. The technique was applied to carbon monoxide under the conditions present in an electrical discharge.
Download or read book NATO Advanced Study Institute on Plasma Processing of Semiconductors written by and published by . This book was released on 1997 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial contents: Introduction to Plasma Etching; Plasma Chemistry, Basic Processes and PECVD; The Role of ions in Reactive Ion Etching with Low Density Plasmas; SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas; Introduction to Plasma Enhanced Chemical Vapor Deposition; Topography Evolution During Semiconductor Processing; Deposition of Amorphous Silicon; High Density Sources for Plasma Etching; Resonant Plasma Excitation by Electron Cyclotron Waves-Fundamentals and Applications; The Transition from Capacitive to Inductive to Wave Sustained Discharges.
Download or read book High Density Helicon Plasma Science written by Shunjiro Shinohara and published by Springer Nature. This book was released on 2023-02-03 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights a high-density helicon plasma source produced by radio frequency excitation in the presence of magnetic fields, which has attracted considerable attention thanks to its wide applicability in various fields, from basic science to industrial use. Presenting specific applications such as plasma thrusters, nuclear fusion, and plasma processing, it offers a review of modern helicon plasma science for a broad readership. The book covers a wide range of topics, including the fundamental physics of helicon plasma and their cutting-edge applications, based on his abundant and broad experience from low to high temperature plasmas, using various linear magnetized machines and nuclear fusion ones such as tokamaks and reversed field pinches. It first provides a brief overview of the field and a crash course on the fundamentals of plasma, including miscellaneous diagnostics, for advanced undergraduate and early graduate students in plasma science, and presents the basics of helicon plasma for beginners in the field. Further, digesting advanced application topics is also useful for experts to have a quick overview of extensive helicon plasma science research.
