Download or read book Active Gate Drivers for High frequency Application of SiC MOSFETs written by Alejandro Paredes Camacho and published by . This book was released on 2020 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems.For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems.This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters. Every developed stage regarding the GDs is validated through tests and experimental studies. In addition, the developed GDs are applied to converters for wireless charging systems of electric vehicle batteries. The results show the effectiveness of the proposed GDs and their viability in power converters based on SiC MOSFET devices.

Download or read book High Frequency MOSFET Gate Drivers written by ZhiLiang Zhang and published by . This book was released on 2017 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Frequency MOSFET Gate Drivers written by ZhiLiang Zhang and published by IET. This book was released on 2017-09-14 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced high frequency power MOSFET gate driver technologies, which serve a critical role between control and power devices. A gate driver is a power amplifier that accepts a low-power input from a controller integrated circuit and produces a high-current drive input for the gate of a high-power transistor such as a power MOSFET (metal-oxide-semiconductor field-effect transistor).

Download or read book 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia WiPDA Asia written by and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Wide Bandgap Silicon Carbide SiC Gate Driver for High Temperature High Voltage and High Frequency Applications written by Rajan Raj Lamichhane and published by . This book was released on 2013 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The potential of silicon carbide (SiC) for modern power electronics applications is revolutionary because of its superior material properties including substantially better breakdown voltage, power density, device leakage, thermal conductivity, and switching speed. Integration of gate driver circuitry on the same chip, or in the same package, as the power device would significantly reduce the parasitic inductance, require far less thermal management paraphernalia, reduce cost and size of the system, and result in more efficient and reliable electrical and thermal performance of the system. The design of a gate driver circuit with good performance parameters in this completely new under-development SiC process is the key to realization of this ultimate goal of integrating a SiC gate driver with a SiC power MOSFET. The objective of this joint undertaking is integration of the designed gate driver into the electronic battery charger onboard the new plug-in hybrid Toyota Prius. The ultimate goal of the project is in-vehicle demonstration and commercialization. This high frequency charger will be five times more powerful with a 10 times size reduction and significant cost reduction on the long run. This thesis presents the design, layout, simulation, testing and verification of a gate driver circuit implemented and fabricated in the Cree SiC process. The gate driver has a rise time and fall time of 45 ns and 41 ns, respectively, when driving a SiC power MOSFET with peak current reaching around 3 A. At a switching frequency of 500 kHz, the gate driver power dissipation was around 6.5 W. The gate driver was operable over a temperature range between 25 °C and 420 °C with only slight degradation in performance parameters. This thesis will provide a comprehensive overview of gate driver design and testing phases with relevant background.

Download or read book On the perspectives of SiC MOSFETs in high frequency and high power isolated DC DC converters written by Eial Awwad, Abdullah and published by Universitätsverlag der TU Berlin. This book was released on 2020-08-11 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increasing demand for efficiency and power density pushes Si-based devices to some of their inherent material limits, including those related to temperature operation, switching frequency, and blocking voltage. Recently, SiC-based power devices are promising candidates for high-power and high-frequency switching applications. Today, SiC MOSFETs are commercially available from several manufacturers. Although technology affiliated with SiC MOSFETs is improving rapidly, many challenges remain, and some of them are investigated in this work. The research work in this dissertation is divided into the three following parts. Firstly, the static and switching characteristics of the state-of-the-art 1.2 kV planar and double-trench SiC MOSFETs from two different manufacturers are evaluated. The effects of different biasing voltages, DC link voltages, and temperatures are analysed. The characterisation results show that the devices exhibit superior switching performances under different operating conditions. Moreover, several aspects of using the SiC MOSFET’s body diode in a DC/DC converter are investigated, comparing the body-diodes of planar and double-trench devices. Reverse recovery is evaluated in switching tests considering the case temperature, switching rate, forward current, and applied voltage. Based on the measurement results, the junction temperature is estimated to guarantee safe operation. A simple electro-thermal model is proposed in order to estimate the maximum allowed switching frequency based on the thermal design of the SiC devices. Using these results, hard- and soft-switching converters are designed, and devices are characterised as being in continuous operation at a very high switching frequency of 1 MHz. Thereafter, the SiC MOSFETs are operated in a continuous mode in a 10 kW / 100-250 kHz buck converter, comparing synchronous rectification, the use of the body diode, and the use of an external Schottky diode. Further, the parallel operation of the planar devices is considered. Thus, the paralleling of SiC MOSFETs is investigated before comparing the devices in continuous converter operation. In this regard, the impact of the most common mismatch parameters on the static and dynamic current sharing of the transistors is evaluated, showing that paralleling of SiC MOSFETs is feasible. Subsequently, an analytical model of SiC MOSFETs for switching loss optimisation is proposed. The analytical model exhibits relatively close agreement with measurement results under different test conditions. The proposed model tracks the oscillation effectively during both turn-on and –off transitions. This has been achieved by considering the influence of the most crucial parasitic elements in both power and gate loops. In the second part, a comprehensive short-circuit ruggedness evaluation focusing on different failure modes of the planar and double-trench SiC devices is presented. The effects of different biasing voltages, DC link voltages, and gate resistances are evaluated. Additionally, the temperature-dependence of the short-circuit capability is evaluated, and the associated failure modes are analysed. Subsequently, the design and test of two different methods for overcurrent protection are proposed. The desaturation technique is applied to the SiC MOSFETs and compared to a second method that depends on the stray inductance of the devices. Finally, the benefits of using SiC devices in continuous high-frequency, high-power DC/DC converters is experimentally evaluated. In this regard, a design optimisation of a high-frequency transformer is introduced, and the impact of different core materials, conductor designs, and winding arrangements are evaluated. A ZVZCS Phase-Shift Full-Bridge unidirectional DC/DC converter is proposed, using only the parasitic leakage inductance of the transformer. Experimental results for a 10 kW, (100-250) kHz prototype indicate an efficiency of up to 98.1% for the whole converter. Furthermore, an optimized control method is proposed to minimise the circulation current in the isolated bidirectional dual active bridge DC/DC converter, based on a modified dual-phase-shift control method. This control method is also experimentally compared with traditional single-phase shift control, yielding a significant improvement in efficiency. The experimental results confirm the theoretical analysis and show that the proposed control can enhance the overall converter efficiency and expand the ZVZCS range. Die steigende Nachfrage nach Effizienz und Leistungsdichte bringt Si-basierte eistungsbauteile an einige inhärente Materialgrenzen, die unter anderem mit der Temperaturbelastung, der Schaltfrequenz und der Blockierspannung in Zusammenhang stehen. In jüngster Zeit sind SiC-basierte Leistungsbauelemente vielversprechende Kandidaten für Hochleistungs- und Hochfrequenzanwendungen. Aktuell sind SiC-MOSFETs von mehreren Herstellern im Handel erhältlich. Obwohl sich die Technologie der SiC-MOSFETs rasch verbessert, werden viele Herausforderungen bestehen bleiben. Einige dieser Herausforderungen werden in dieser Arbeit untersucht. Die Untersuchungen in dieser Dissertation gliedern sich in die drei folgenden Teile: Im ersten Teil erfolgt, die statische und die transiente Charakterisierung der aktuellen 1,2 kV Planarund Doubletrench SiC-MOSFETs verschiedener Hersteller. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Temperaturen werden analysiert. Die Ergebnisse der Charakterisierung zeigen, dass die Bauteile überlegene Schaltleistungen unter verschiedenen Betriebsbedingungen aufweisen. Darüber hinaus wird der Einsatz der internen SiC-Bodydioden in einem DC/DC-Wandler untersucht, wobei die Unterschiede zwischen Planar- und Doppeltrench-Bauteilen aufgezeigt werden. Das Reverse-Recovery-Verhalten wird unter Berücksichtigung der Gehäusetemperatur, der Schaltgeschwindigkeit, des Durchlassstroms und der angelegten Spannung bewertet. Anhand der Messergebnisse wird die Sperrschichttemperatur geschätzt, damit ein sicherer Betrieb gewährleistet ist. Ein einfaches elektrothermisches Modell wird vorgestellt, um die maximal zulässige Schaltfrequenz auf der Grundlage des thermischen Designs der SiC-Bauteile abzuschätzen. Anhand dieser Ergebnisse werden hart- und weichschaltende Umrichter konzipiert und die Bauteile werden im Dauerbetrieb mit einer sehr hohen Schaltfrequenz von 1 MHz untersucht. Danach werden die SiC-MOSFETs im Dauerbetrieb in einem 10 kW / 100-250 kHz-Tiefsetzsteller betrieben. Dabei wird die Synchrongleichrichtung, die Verwendung der internen Diode und die Verwendung einer externen Schottky-Diode verglichen. Außerdem wird die Parallelisierung von SiC-MOSFETs untersucht, bevor die Parallelschaltung der verschiedenen Bauelemente ebenso im kontinuierlichen Konverterbetrieb verglichen wird. Es wird der Einfluss der häufigsten Parametervariationen auf die statische und dynamische Stromaufteilung der Transistoren analysiert, was zeigt, dass eine Parallelisierung von SiC-MOSFETs möglich ist. Anschließend wird ein analytisches Modell der SiC-MOSFETs zur Schaltverlustoptimierung vorgeschlagen. Das analytische Modell zeigt eine relativ enge Übereinstimmung mit den Messergebnissen unter verschiedenen Testbedingungen. Das vorgeschlagene Modell bildet die Schwingungen sowohl beim Ein- als auch beim Ausschalten effektiv nach. Dies wurde durch die Berücksichtigung der wichtigsten parasitären Elemente in Strom- und Gatekreisen erreicht. Im zweiten Teil wird eine umfassende Bewertung der Kurzschlussfestigkeit mit Fokus auf verschiedene Ausfallmodi der planaren und double-trench SiC-Bauelemente vorgestellt. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Gate-Widerstände werden ausgewertet. Zusätzlich wird die temperaturabhängige Kurzschlussfähigkeit ausgewertet und die zugehörigen Fehlerfälle werden analysiert. Anschließend wird die Auslegung und Prüfung von zwei verschiedenen Verfahren zum Überstromschutz evaluiert. Die „Desaturation“-Technik wird auf SiC-MOSFETs angewendet und mit einer zweiten Methode verglichen, welche die parasitäre Induktivität der Bauelemente nutzt. Schließlich wird der Nutzen des Einsatzes von SiC-Bauteilen in kontinuierlichen Hochfrequenz-Hochleistungs-DC/DC-Wandlern experimentell untersucht. In diesem Zusammenhang wird eine Designoptimierung eines Hochfrequenztransformators vorgestellt und der Einfluss verschiedener Kernmaterialien, Leiterausführungen und Wicklungsanordnungen wird bewertet. Es wird ein unidirektionaler ZVZCS Vollbrücken-DC/DC-Wandler vorgestellt, der nur die parasitäre Streuinduktivität des Transformators verwendet. Experimentelle Ergebnisse für einen 10 kW, (100-250) kHz Prototyp zeigen einenWirkungsgrad von bis zu 98,1% für den gesamten Umrichter. Abschließend wird ein optimiertes Regelverfahren verwendet, welches auf einem modifizierten Dual-Phase-Shift-Regelverfahren basiert, um den Kreisstrom im isolierten bidirektionalen Dual-Aktiv-Brücken-DC/DC-Wandler zu minimieren. Diese Regelmethode wird experimentell mit der herkömmlichen Single-Phase-Shift-Regelung verglichen. Hierbei zeigt sich eine deutliche Effizienzsteigerung durch die neue Regelmethode. Die experimentellen Ergebnisse bestätigen die theoretische Analyse und zeigen, dass die vorgeschlagene Regelung den Gesamtwirkungsgrad des Umrichters erhöhen und den ZVZCS-Bereich erweitern kann.

Download or read book Two stage Active Gate Driver for SiC MOSFET written by Abhay Negi and published by . This book was released on 2017 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Next Generation ADCs High Performance Power Management and Technology Considerations for Advanced Integrated Circuits written by Andrea Baschirotto and published by Springer Nature. This book was released on 2019-10-24 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on the 18 tutorials presented during the 28th workshop on Advances in Analog Circuit Design. Expert designers present readers with information about a variety of topics at the frontier of analog circuit design, including next-generation analog-to-digital converters , high-performance power management systems and technology considerations for advanced IC design. For anyone involved in analog circuit research and development, this book will be a valuable summary of the state-of-the-art in these areas. Provides a summary of the state-of-the-art in analog circuit design, written by experts from industry and academia; Presents material in a tutorial-based format; Includes coverage of next-generation analog-to-digital converters, high-performance power management systems, and technology considerations for advanced IC design.

Download or read book Gate Drive Design for Paralleled SiC MOSFETs in High Power Voltage Source Converters written by Craig Timms and published by . This book was released on 2018 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: High power voltage source converters (VSC) are vital in applications ranging from industrial motor drives to renewable energy systems and electrified transportation. In order to achieve high power the semiconductor devices used in a VSC need to be paralleled, making the gate drive design complicated. The silicon carbide (SiC) MOSFET brings much benefit over similarly rated silicon (Si) devices but further complicates the gate drive design in a parallel environment due to it's fast switching capability and limited short-circuit withstand time. A gate driver design with proper accommodation of key issues for paralleled 1.7 kV SiC MOSFETs in high power VSC applications is developed. Three of the main issues are current imbalance, short-circuit protection, and cross-talk. By characterizing devices and supporting circuitry an understanding of constraints and sensitivities with regards to current balance between devices is developed for design optimization. A short-circuit detection scheme with adequate response time is employed and mitigation steps presented for issues arising from paralleling devices including large transient energy and instability. Cdv/dt induced gate voltage--cross-talk--is addressed by adapting a mitigation method to multiple devices. Finally, the gate driver is demonstrated in a full scale half-bridge using four devices per switch.

Download or read book Fast Short circuit Protection for SiC MOSFETs in Extreme Short circuit Conditions by Integrated Functions in CMOS ASIC Technology written by Yazan Barazi and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap power transistors such as SiC MOSFETs and HEMTs GaN push furthermore the classical compromises in power electronics. Briefly, significant gains have been demonstrated: better efficiency, coupled with an increase in power densities offered by the increase in switching frequency. HV SiC MOSFETs have specific features such as a low short-circuit SC withstand time capability compared to Si IGBTs and thinner gate oxide, and a high gate-to-source switching control voltage. The negative bias on the gate at the off-state creates additional stress which reduces the reliability of the SiC MOSFET. The high positive bias on the gate causes a large drain saturation current in the event of a SC. Thus, this technology gives rise to specific needs for ultrafast monitoring and protection. For this reason, the work of this thesis focuses on two studies to overcome these constraints, with the objective of reaching a good performance compromise between “CMS/ASIC-CMOS technological integration level-speed-robustness”. The first one, gathers a set of new solutions allowing a detection of the SC on the switching cycle, based on a conventional switch control architecture with two voltage levels. The second study is more exploratory and is based on a new gate-driver architecture, called multi-level, with low stress level for the SiC MOSFET while maintaining dynamic performances. The manuscript covers firstly the SiC MOSFET environment, (characterization and properties of SC behavior by simulation using PLECS and LTSpice software) and covers secondly a bibliographical study on the Gate drivers. And last, an in-depth study was carried out on SC type I & II (hard switch fault) (Fault under Load) and their respective detection circuits. A test bench, previously carried out in the laboratory, was used to complete and validate the analysis-simulation study and to prepare test stimuli for the design stage of new solutions. Inspired by the Gate charge method that appeared for Si IGBTs and evoked for SiC MOSFETs, this method has therefore been the subject of design, dimensioning and prototyping work, as a reference. This reference allows an HSF type detection in less than 200ns under 400V with 1.2kV components ranging from 80 to 120mOhm. Regarding new rapid and integrated detection methods, the work of this thesis focuses particularly on the design of a CMOS ASIC circuit. For this, the design of an adapted gate driver is essential. An ASIC is designed in X-Fab XT-0.18 SOICMOS technology under Cadence, and then packaged and assembled on a PCB. The PCB is designed for test needs and adaptable to the main bench. The design of the gate driver considered many functions (SC detection, SSD, segmented buffer, an "AMC", ...). From the SC detection point of view, the new integrated monitoring functions concern the VGS time derivative method which is based on a detection by an RC analog shunt circuit on the plateau sequence with two approaches: the first approach is based on a dip detection, i.e. the presence or not of the Miller plateau. The second approach is based on slope detection, i.e. the variability of the input capacitance of the power transistor under SC-HSF compared to normal operation. These methods are compared in the third chapter of the thesis, and demonstrate fault detection times between 40ns and 80ns, and preliminary robustness studies and critical cases are presented. A second new method is partially integrated in the ASIC, was designed. This method is not developed in the manuscript for valorization purposes. In addition to the main study, an exploratory study has focused on a modular architecture for close control at several bias voltage levels taking advantage of SOI isolation and low voltage CMOS transistors to drive SiC MOSFETs and improve their reliability through active and dynamic multi-level selection of switching sequences and on/off states.

Download or read book Power Signal Integrated Gate Driver Design and Protection for Medium Voltage Sic Mosfets written by Zhehui Guo and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The newly emerged medium-voltage (MV) silicon carbide (SiC) MOSFETs, spanning 2.5 kV to 15 kV range, are under the rapid developments and have received increasing attention recently. Compared to Si devices, SiC MOSFETs have significant improvements on the blocking voltage, specific on-resistance, switching speed and operating temperature. Therefore, MV SiC MOSFETs have a great potential to improve the efficiency and power density of MV converters, and meanwhile to drive down the system complexity. As the interface between MV SiC MOSFETs and control circuits, gate driver (GD) performance is critical to fully leverage the potential benefits of SiC devices as well as to enhance the reliability, such as the sufficient common-mode (CM) transient immunity (CMTI) and fast fault protection. Since there is little commercial GDs for MV SiC MOFETs, the research on MV GDs is still being explored, mainly focusing on the isolated GD power supply (GDPS) and fault protection designs. Existing MV GD solutions exhibit bulky size and high cost, since they not only require bulky GDPS to transmit GD power, but also need costly fiber optics (FOs) to transmit gate/ fault signals. State-of-the-art (SOA) GDPSs have demonstrated a reduced size aiming at the MV insulation requirement, but the total GD volume is still comparable or larger than the MV SiC devices. This dissertation proposes the power-signal integrated GD for MV SiC MOSFETs to minimize the GD footprint, which helps to integrate the GD into MV SiC device packages. This concept is utilized to firstly propose a 20-MHz dual-transformer-based isolated GD with power-signal integrated transmission. It not only removes costly FOs and bulky GDPSs, but also achieves the good timing performance including the full PWM duty-cycle range operation, low propagation delay time, and high PWM duty-cycle resolution. The solid-dielectrics-based insulation scheme is applied for proposed GD, which enables an insulating voltage > 10 kV rms for MV requirements as well as a moderate coupling capacitance to enhance the CMTI. The experimental results have verified the validity of proposed 20-MHz dual-transformer-based power-signal integrated GD for 3.3-kV and 10-kV SiC MOSFETs. To further reduce both the coupling capacitance and footprint of the power-signal integrated GD for MV SiC MOSFETs, a 50-MHz single-transformer-based design is then proposed, and its performance has been experimentally verified by driving 10-kV SiC MOSFET. The PD performance of GD transformer under the high frequency, high dv/dt PWM voltage excitation is also characterized using photo-multiplier tube method. Due to the lack of comprehensive and quantitative design principles, the conventional DESAT protection circuit parameters usually require trail-and-error efforts to achieve both the sufficient noise immunity to high dv/dt and fast fault response time. To address this issue, the quantitative design constraints and optimization methodology for DESAT circuit parameters are developed with little tuning work. The proposed DESAT circuit parameter design and optimization methodology has been experimentally verified on 3.3-kV SiC MOSFET module. The conventional DESAT protection scheme cannot be applied into switched-capacitor-based converters due to the inrush current spike occurring at the converter commutation. To eliminate the false-triggering issue induced by the inrush current, a novel charge-based DESAT protection scheme is proposed, where the "fault charge" rather than "fault current" is selected for the fault diagnosis. The proposed charge-based DESAT protection scheme considers the accumulation of fault current over time and thus can screen the narrow inrush current spikes with high magnitude. The proposed charge-based DESAT protection scheme has been designed and experimentally verified on 3.3-kV discrete SiC MOSFETs.

Download or read book The Proceedings of 2023 International Conference on Wireless Power Transfer ICWPT2023 written by Chunwei Cai and published by Springer Nature. This book was released on with total page 701 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CMOS Active Gate Driver for Closed loop Dv dt Control of Wide Bandgap Power Transistors written by Plinio Carlos Bau and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap (WBG) power transistors such as SiC MOSFETs and GaN HEMTs are a real breakthrough in power electronics. These power semiconductor devices have lower conduction and switching losses than their Silicon competitors. However, the fast switching transients can be an issue in terms of Electromagnetic Interferences (EMI). Consequently, one must slow down the switching speeds of WBG transistors to comply with EMI limitations, which reduces their advantages in terms of higher switching frequencies and lower total losses. In this work, an active gate driver is proposed to control the switching speed of wide bandgap semiconductor power transistors. An innovative closed-loop control circuit makes it possible to adjust separately the dv/dt and di/dt during the switching sequences. Overall, the dv/dt values can be reduced to comply with system-level limits of EMI, with less switching losses than existing methods. The proposed method is thoroughly investigated, with analytic and numerical models to assess the key performances: feedback loop bandwidth, optimal circuit design, area consumption. Selected and optimal designs are implemented in two integrated circuits in CMOS technology which demonstrate delay times below the nanosecond. With such performances, it has been shown experimentally that it is possible to actively control switching speeds higher than 100 V/ns under voltages of 400 V.

Download or read book Highly Integrated Gate Drivers for Si and GaN Power Transistors written by Achim Seidel and published by Springer Nature. This book was released on 2021-03-31 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​

Download or read book Closed Loop Dv dt Control for Equal Voltage Sharing Between Series Connected SiC MOSFETs written by Vaibhav Uttam Pawaskar and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An efficient and cost-effective Medium-Voltage (MV) power semiconductor switch, which is capable of high switching speed, is highly desirable for many existing and emerging high power MV power conversion applications, such as solid-state transformers, MV motor drives, renewable energy and storage integration with the medium voltage grid, Flexible Alternating Current Transmission System (FACTS) devices etc. Emerging MV Silicon Carbide (SiC) 10 kV/15 kV MOSFETs and IGBTs can be the potential candidate for these applications. However, high cost, lack of the reliability data, and limited availability are the major hurdles for the successful adoption of these devices. Efficient and cost-effective MV switches can be also realized by series connection of reliable, and commercially available Low-Voltage (LV) devices. The main concern of the series connected SiC devices is unequal voltage distribution between devices during transient and steady state. This thesis deals with this issue and proposes a closed loop active gate driver circuit which can control rate of rise of drain-source voltage of SiC MOSFET during turn-off and turn-on interval without any significant penalty on switching losses.

Download or read book 2016 IEEE 2nd Annual Southern Power Electronics Conference SPEC written by IEEE Staff and published by . This book was released on 2016-12-05 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2nd IEEE Southern Power Electronics Conference, SPEC 2016, offers an ideal opportunity for researchers, engineers, academics and students from all over the world to bring the latest technological advances and applications in Power Electronics to the Southern Hemisphere, as well as to network and promote the discipline Cutting edge researchers in this field will present keynote speeches during a four day program that also features tutorials and technical sessions on theory, analysis, design, testing and advances within the field of power electronics

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.