Download or read book A Theoretical Study of Oxide Defects Near a Silicon silicon Dioxide Interface written by Andrew Xun Chu and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Point Defects and Interfaces in Insulating Solids written by Frank J. Feigl and published by . This book was released on 1989 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: This contract was the latest phase in a long-standing relationship between ONR and the principal investigators on the experimental and theoretical study of silicon dioxide and the silicon - silicon dioxide interface. During this period we made important contributions towards understanding both bulk silicon dioxide and the interface, which has recently been called 'the most important material system of our era(1)'. We carried out a number of experiments on MOS (metal-oxide-semiconductor) systems. These experiments were designed to study such important features as chlorine incorporation, hydrogen migration, interface trap generation, defect structures associated with fabrication conditions, and hysteresis effects associated with charge trapping at near-interface defects. We carried out theoretical studies on bulk oxide defects, including the peroxyl radical, the non-bridging oxygen hole center, and various E' centers. In the process we took the lead in applying the semiempirical molecular orbital technique MINDO/3 to such defects, which others are now following. Keywords: Tunneling electronics, Silicon, Mathematical models, E centers, Lattice relaxation, Semiconductor-insulator interfaces. (aw).
Download or read book Defects in SiO2 and Related Dielectrics Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Download or read book Theoretical Study of the Silicon silicon Dioxide Interface and Valence Band Augerline Shapes written by Thampachen Kunjunny and published by . This book was released on 1980 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and published by The Electrochemical Society. This book was released on 1997 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Quantum Mechanical Cluster Calculations In Solid State Studies written by Richard C A Catlow and published by World Scientific. This book was released on 1992-04-30 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume takes an indepth look at the current research done in this important area of solid state science. Although the emphasis is on modelling the properties of definite materials, perfect crystal lattices are also considered in some detail. It is noteworthy that the review articles are written by some of the best known experts in the field.
Download or read book Defects and Transport in Oxides written by Robert Jaffee and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: DEFECTS AND TRANSPORT IN OXIDES is the proceedings of the eighth Battelle Colloquium in the Materials Sciences, held in Columbus and Salt Fork, Ohio, September 17-22, 1973. It took as its theme the relationship between defects and transport of both mass and charge in oxides. Applications of defect-controlled transport to a number of important processes in oxides also were covered. In selecting this topic, the Organizing Committee thought that 1973 was timely to bring together the leading theoretical and experimental researchers in the oxide transport field to review its status in a critical way, and to consider current major research directions and how research in the future might be guided into fruitful areas. The meeting was highlighted by the presentation of several papers which suggest that major advances in our understanding of transport in oxides appear to be imminent. These papers dealt with the results of new theoretical approaches whereby the energies and configurations of defects may be calculated, and with new experimental techniques for indirectly observing these defects, previously thought to be below the limits of experimental resolving power. Other papers, dealing with the application of defect chemistry to technological processes, served to demonstrate the successes and to point out yet unresolved problems associated with ix x PREFACE understanding the chemistry of imperfect crystals.
Download or read book Postdoctoral Research Associateships written by and published by . This book was released on 1986 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Download or read book A Study of the Bulk and Interface Defects in Silicon Metal oxide semiconductor Microstructures written by Yuan-Chen Sun and published by . This book was released on 1983 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1997 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Oxide Reliability written by D. J. Dumin and published by World Scientific. This book was released on 2002 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents in summary the state of our knowledge of oxide reliability.
Download or read book Defects at Oxide Surfaces written by Jacques Jupille and published by Springer. This book was released on 2015-02-09 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties have yet to be developed. The book gives guidance to tailor oxide surfaces by controlling the nature and concentration of defects. The importance of defects in the physics and chemistry of metal oxide surfaces is presented in this book together with the prominent role of oxides in common life. The book contains contributions from leaders in the field. It serves as a reference for experts and beginners in the field.
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
